Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Material | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Frequency Band | Channel Type | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Number of Elements per Chip | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Peak On-State Voltage - (V) | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (A) | Maximum Continuous DC Collector Current - (mA) | Maximum Collector-Base Voltage - (V) | Maximum Drain-Gate Voltage - (V) | Typical Input Resistance - (kOhm) | Test Current - (mA) | Rated Average On-State Current - (A) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Holding Current - (mA) | Maximum Drain-Source Voltage - (V) | Maximum Continuous Drain Current - (mA) | Maximum Base-Emitter Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum Forward Voltage - (V) | Maximum DC Collector Current - (A) | Peak Reverse Current - (uA) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Diode Capacitance - (pF) | Repetitive Peak Forward Blocking Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Transition Frequency - (MHz) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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HN1C03FU-B,LF(T
Trans GP BJT NPN 20V 0.3A 200mW 6-Pin US T/R
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Bestand
2.439
Von 0,152 € bis 0,4216 €
pro Stück
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Toshiba | GP BJT | NPN | Si | Bipolar Small Signal | Dual | 2 | 20 | 50 | 200 | 25 | 0.3 | 300 to 500 | 350@4mA@2V | 0.1@3mA@30mA | Tape and Reel | 6 | US | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J132TU,LF(T
Trans MOSFET P-CH Si 12V 5.4A 3-Pin UFM T/R
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Bestand
698
0,1471 €
pro Stück
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Toshiba | MOSFETs | Si | Small Signal | P | Single | Enhancement | 1 | 500 | 12 | 5.4 | ±6 | 17@4.5V | 33@4.5V | 2700@10V | Tape and Reel | 3 | UFM | No | Yes | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N813R,LF
Trans MOSFET N-CH Si 100V 3.5A 6-Pin TSOP-F T/R Automotive AEC-Q101
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Bestand
1.293
0,1191 €
pro Stück
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Toshiba | MOSFETs | Si | Power MOSFET | N | Dual | Enhancement | 2 | 2500 | 100 | 3.5 | ±20 | 112@10V | 3.6@4.5V | 242@15V | Tape and Reel | 6 | TSOP-F | SO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK5R1E06PL,S1X(S
Trans MOSFET N-CH Si 60V 98A 3-Pin(3+Tab) TO-220
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Bestand
49
Von 0,5287 € bis 0,6695 €
pro Stück
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Toshiba | MOSFETs | Si | Power MOSFET | N | Single | Enhancement | 1 | 87000 | 60 | 98 | ±20 | 5.1@10V | 18@4.5V|36@10V | 2380@30V | 3 | TO-220 | TO | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1162-GR,LF(T
Trans GP BJT PNP 50V 0.15A 150mW Automotive AEC-Q101 3-Pin S-Mini T/R
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Bestand
1.193
Von 0,0325 € bis 0,0828 €
pro Stück
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Toshiba | GP BJT | PNP | Si | Bipolar Small Signal | Single | 1 | 50 | 50 | 150 | 5 | 0.15 | 4 | 0.3@10mA@100mA | 10 | Tape and Reel | 3 | S-Mini | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1832-GR,LF(T
Trans GP BJT PNP 50V 0.15A 100mW 3-Pin SSM T/R Automotive AEC-Q101
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Bestand
2.760
Von 0,0382 € bis 0,0967 €
pro Stück
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Toshiba | GP BJT | PNP | Si | Bipolar Small Signal | Single | 1 | 50 | 50 | 100 | 5 | 0.15 | 200 to 300 | 200@2mA@6V | 0.3@10mA@100mA | Tape and Reel | 3 | SSM | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRZ16(TE85L,Q,M)
Zener Diode Single 16V 10% 30Ohm 700mW 2-Pin S-FLAT T/R
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Bestand
2.060
Von 0,0801 € bis 0,209 €
pro Stück
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Toshiba | Zener | Voltage Regulator | Single | 16 | 10% | 10 | 700 | 10 | 30 | 700 | Tape and Reel | 2 | S-FLAT | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK8R2E06PL,S1X(S
Trans MOSFET N-CH Si 60V 50A 3-Pin(3+Tab) TO-220
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Bestand
130
Von 0,457 € bis 0,7593 €
pro Stück
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Toshiba | MOSFETs | Si | Power MOSFET | N | Single | Enhancement | 1 | 81000 | 60 | 50 | ±20 | 8.2@10V | 15@4.5V|28@10V | 1990@30V | 3 | TO-220 | TO | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN4982FE,LF(CT
Trans Digital BJT NPN/PNP 50V 0.1A 100mW 6-Pin ES T/R
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Bestand
3.050
Von 0,053 € bis 0,1192 €
pro Stück
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Toshiba | Digital-BJT | NPN|PNP | Dual | 50 | 0.1 | 10 | 100 | 1 | 50@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 6 | ES | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HN4C06J-GR(TE85L,F
Trans GP BJT NPN 120V 0.1A 300mW 5-Pin SMV T/R
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Bestand
5
0,438 €
pro Stück
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Toshiba | GP BJT | NPN | Si | Bipolar Small Signal | Dual Common Emitter | 2 | 120 | 120 | 300 | 5 | 0.1 | 200 to 300 | 200@2mA@6V | 0.3@1mA@10mA | Tape and Reel | 5 | SMV | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMS16(TE12L,Q,M)
Diode Schottky 40V 3A 2-Pin M-FLAT T/R
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Bestand
2.522
Von 0,6047 € bis 0,7749 €
pro Stück
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Toshiba | Gleichrichter | Schottky Diode | Single | 40 | 3 | 30 | 0.55 | 200 | Tape and Reel | 2 | M-FLAT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J375F,LXHF
Trans MOSFET P-CH Si 20V 2A 3-Pin S-Mini Automotive AEC-Q101
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Bestand
75
0,0566 €
pro Stück
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Toshiba | MOSFETs | Si | Small Signal | P | Single | Enhancement | 1 | 1200 | 20 | 2 | 6 | 150@4.5V | 4.6@4.5V | 270@10V | 3 | S-Mini | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK5A90E,S4X(S
Trans MOSFET N-CH Si 900V 4.5A 3-Pin(3+Tab) TO-220SIS
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Bestand
39
Von 0,6418 € bis 0,8725 €
pro Stück
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Toshiba | MOSFETs | Si | Power MOSFET | N | Single | Enhancement | 1 | 40000 | 900 | 4.5 | ±30 | 3100@10V | 20@10V | 950@25V | 3 | TO-220SIS | TO | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2712-BL,LXGF(T Trans GP BJT NPN 50V 0.15A 150mW 3-Pin S-Mini T/R Automotive AEC-Q101 |
Bestand
2.440
0,5166 €
pro Stück
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Toshiba | GP BJT | NPN | Si | Bipolar Small Signal | Single | 1 | 50 | 60 | 150 | 5 | 0.15 | 300 to 500 | 350@2mA@6V | 0.25@10mA@100mA | 3 | S-Mini | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH5900CNH,L1Q(M
Trans MOSFET N-CH Si 150V 18A 8-Pin SOP Advance T/R
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Bestand
7.579
Von 0,3576 € bis 0,6012 €
pro Stück
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Toshiba | MOSFETs | Si | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 42000 | 150 | 18 | ±20 | 4 | 59@10V | 7@10V | 7 | 460@75V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GT15J341,S4X(S
Trans IGBT Chip N-CH 600V 15A 30W 3-Pin(3+Tab) TO-220SIS Magazine
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Bestand
50
Von 1,0884 € bis 2,1078 €
pro Stück
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Toshiba | IGBT-Chip | N | Single | ±25 | 600 | 15 | 30 | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK090N65Z,S1F(S
Trans MOSFET N-CH Si 650V 30A 3-Pin(3+Tab) TO-247
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Bestand
120
2,5439 €
pro Stück
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Toshiba | MOSFETs | Si | Power MOSFET | N | Single | Enhancement | 1 | 230000 | 650 | 30 | ±30 | 90@10V | 47@10V | 2780@300V | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6J412TU,LF(T
Trans MOSFET P-CH Si 20V 4A 6-Pin UF T/R
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Bestand
2.475
Von 0,133 € bis 0,2211 €
pro Stück
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Toshiba | MOSFETs | Si | Power MOSFET | P | Single Quad Drain | Enhancement | 1 | 1000 | 20 | 4 | ±8 | 1 | 42.7@4.5V | 12.8@4.5V | 840@10V | Tape and Reel | 6 | UF | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TBAT54,LM(T
Diode Small Signal Schottky 35V 0.2A 3-Pin SOT-23 T/R
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Bestand
2.885
Von 0,0411 € bis 0,0731 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Single | 35 | 0.2 | 1 | 320 | 0.58@0.1A | 2 | 1.5 | Tape and Reel | 3 | SOT-23 | SOT | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK14N65W,S1F
Trans MOSFET N-CH Si 650V 13.7A 3-Pin(3+Tab) TO-247 Tube
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Bestand
30
1,0971 €
pro Stück
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Toshiba | MOSFETs | Si | Power MOSFET | N | Single | Enhancement | 1 | 130000 | 650 | 13.7 | ±30 | 3.5 | 250@10V | 35@10V | 35 | 1300@300V | Tube | 3 | TO-247 | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPCP8505(TE85L,F)
Trans GP BJT NPN 50V 3A 3000mW 8-Pin PS T/R
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Bestand
1.765
Von 0,0843 € bis 0,0933 €
pro Stück
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Toshiba | GP BJT | NPN | Si | Bipolar Power | Single Hex Collector | 1 | 50 | 1.1@20mA@1A | 100 | 3000 | 7 | 3 | 200 to 300|300 to 500 | 200@1A@2V|400@0.3A@2V | 0.14@20mA@1A | Tape and Reel | 8 | PS | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK8A10K3,S5Q(M
Trans MOSFET N-CH 100V 8A 3-Pin(3+Tab) TO-220SIS
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Bestand
17
Von 0,5762 € bis 0,7697 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | N | Single | 1 | 18000 | 100 | 8 | 120@10V | 12.9 | 530 | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM5N15FE(TE85L,F)
Trans MOSFET N-CH Si 30V 0.1A 5-Pin ESV T/R
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Bestand
1.530
Von 0,0787 € bis 0,336 €
pro Stück
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Toshiba | MOSFETs | Si | Small Signal | N | Dual Common Source | Enhancement | 2 | 150 | 30 | 0.1 | ±20 | 4000@4V | 7.8@3V | Tape and Reel | 5 | ESV | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6K514NU,LF(T
Trans MOSFET N-CH Si 40V 12A Automotive AEC-Q101 6-Pin UDFN-B EP T/R
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Bestand
2.990
Von 0,1192 € bis 0,1564 €
pro Stück
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Toshiba | MOSFETs | Si | Power MOSFET | N | Single Quad Drain | Enhancement | 1 | 2500 | 40 | 12 | ±20 | 11.6@10V | 7.5@4.5V | 1110@20V | Tape and Reel | 6 | UDFN-B EP | DFN | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK12A60W,S5VX(J
Trans MOSFET N-CH Si 600V 11.5A 3-Pin(3+Tab) TO-220SIS Tube
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Bestand
21
Von 0,8008 € bis 1,1921 €
pro Stück
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Toshiba | MOSFETs | Si | Power MOSFET | N | Single | Enhancement | 1 | 35000 | 600 | 11.5 | ±30 | 3.7 | 300@10V | 25@10V | 25 | 890@300V | DTMOSIV | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 |