Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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SSM6J501NU,LF
Trans MOSFET P-CH Si 20V 10A 6-Pin UDFN-B EP T/R
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Bestand
3.036
Von 0,0255 € bis 0,0842 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single Quad Drain | Enhancement | 1 | 20 | ±8 | 10 | 15.3@4.5V | 29.9@4.5V | 2000 | 2600@10V | Tape and Reel | 6 | UDFN-B EP | DFN | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1588-Y,LF(T
Trans GP BJT PNP 30V 0.5A 100mW 3-Pin USM T/R
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Bestand
2.100
Von 0,0405 € bis 0,1114 €
pro Stück
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Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Single | 30 | 1 | 35 | 5 | 0.5 | 30 to 50|50 to 120|120 to 200 | 120@100mA@1V|40@400mA@6V | 100 | 0.25@10mA@100mA | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSM6K361NU,LF(T
Trans MOSFET N-CH Si 100V 3.5A 6-Pin UDFN-B EP T/R
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Bestand
3.055
Von 0,145 € bis 0,1607 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain | Enhancement | 1 | 100 | ±20 | 3.5 | 69@10V | 3.2@4.5V | 2500 | 430@15V | 6 | UDFN-B EP | DFN | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH1R005PL,L1Q(M
Trans MOSFET N-CH Si 45V 280A 8-Pin SOP Advance
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Bestand
3.265
Von 0,8345 € bis 2,4619 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 45 | ±20 | 280 | 1.04@10V | 59@4.5V|122@10V | 3000 | 7350@22.5V | 8 | SOP Advance | SO | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS387CT,L3F(T
Diode Switching Si 85V 0.1A 2-Pin CST T/R
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Bestand
30.724
0,907 €
pro Stück
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Toshiba | Gleichrichter | Switching Diode | Si | Single | 85 | 0.1 | 1 | 1.2 | 0.5 | 0.5(Typ) | 1.6(Typ) | 150 | Tape and Reel | 2 | CST | SOD | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TPH6R004PL,LQ(S
Trans MOSFET N-CH Si 40V 49A 8-Pin SOP Advance
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Bestand
613
Von 0,2445 € bis 0,6755 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 40 | ±20 | 49 | 6@10V | 15@4.5V|30@10V | 1800 | 2100@20V | 8 | SOP Advance | SO | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2906,LF
Trans Digital BJT PNP 50V 0.1A 200mW 6-Pin US T/R Automotive AEC-Q101
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Bestand
56
0,0208 €
pro Stück
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Toshiba | Digital-BJT | PNP | Dual | 50 | 4.7 | 0.1 | 0.1 | 80@10mA@5V | 200 | 0.3@0.25mA@5mA | Tape and Reel | 6 | US | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC2873-Y(TE12L,ZC
Trans GP BJT NPN 50V 2A 1000mW 4-Pin(3+Tab) PW-Mini T/R
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Bestand
3.000
0,133 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single Dual Collector | 50 | 1 | 50 | 5 | 1.2@0.05A@1A | 2 | 120 to 200 | 120@0.5A@2V | 1000 | 0.5@0.05A@1A | 30 | 100(Typ) | Tape and Reel | 4 | PW-Mini | SOT | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J331R,LF
Trans MOSFET P-CH Si 20V 4A 3-Pin SOT-23F T/R
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Bestand
28
Von 0,0353 € bis 0,163 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 20 | ±8 | 1 | 4 | 55@4.5V | 10.4@4.5V | 2000 | 630@10V | Tape and Reel | 3 | SOT-23F | SOT | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CUHS15S60,H3F
Diode Small Signal Schottky Si 1.5A 2-Pin US-H
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Bestand
2.900
0,0437 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Si | Single | 1.5 | 10 | 0.67 | 450 | 130(Typ) | 2 | US-H | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK15S04N1L,LQ(O
Trans MOSFET N-CH Si 40V 15A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
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Bestand
1.589
Von 0,2691 € bis 0,4449 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 40 | ±20 | 2.5 | 15 | 17.8@10V | 10@10V | 3.2 | 10 | 46000 | 390 | 610@10V | 13.7@10V|23.1@4.5V | Tape and Reel | 3 | DPAK+ | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K361TU,LF(T
Trans MOSFET N-CH Si 100V 3.5A 3-Pin UFM T/R
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Bestand
3.000
0,1675 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 3.5 | 69@10V | 3.2@4.5V | 1800 | 430@15V | 3 | UFM | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1941-O(S1,E,S)
Trans GP BJT PNP 140V 10A 100000mW 3-Pin(3+Tab) TO-3PN
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Bestand
1
2,1682 €
pro Stück
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Toshiba | GP BJT | PNP | Bipolar Power | Si | Single | 140 | 1 | 140 | 5 | 10 | 50 to 120 | 80@1A@5V | 100000 | 2@0.7A@7A | 3 | TO-3PN | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TPHR9203PL,L1Q(M
Trans MOSFET N-CH Si 30V 280A 8-Pin SOP Advance
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Bestand
1.551
Von 0,6634 € bis 1,9696 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 2.1 | 280 | 920@10V | 38@4.5V|81@10V | 81 | 3000 | 5800@15V | 8 | SOP Advance | SO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK080N60Z1,S1F
Silicon N-Channel MOSFET
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Bestand
20
2,5198 €
pro Stück
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Toshiba | MOSFETs | 3 | TO-247 | TO | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK9R6E15Q5,S1X
Silicon N-channel MOSFET
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Bestand
400
Von 1,0402 € bis 0,721 €
pro Stück
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Toshiba | MOSFETs | 3 | TO-220 | TO | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSM3K324R,LF
Trans MOSFET N-CH Si 30V 4A 3-Pin SOT-23F T/R
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Bestand
3.000
Von 0,0472 € bis 0,0733 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 30 | ±12 | 1 | 4 | 56@4.5V | 2.2@4.5V | 2000 | 200@10V | Tape and Reel | 3 | SOT-23F | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J356R,LF(T
Trans MOSFET P-CH 60V 2A 3-Pin SOT-23F T/R Automotive AEC-Q101
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Bestand
95
Von 0,0682 € bis 0,0712 €
pro Stück
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Toshiba | MOSFETs | Small Signal | P | Single | Enhancement | 1 | 60 | 10 | 2 | 2 | 300@10V | 8.3@10V | 8.3 | 2000 | 40 | 330@10V | 280@4V|240@10V|270@4.5V | Tape and Reel | 3 | SOT-23F | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SA1962-O(Q)
Trans GP BJT PNP 230V 15A 130000mW 3-Pin(3+Tab) TO-3PN
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Bestand
2
2,1337 €
pro Stück
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Toshiba | GP BJT | PNP | Bipolar Power | Si | Single | 230 | 1 | 230 | 5 | 15 | 50 to 120 | 80@1A@5V | 130000 | 3@0.8A@8A | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC5712(TE12L,F)
Trans GP BJT NPN 50V 3A 2500mW 4-Pin(3+Tab) PW-Mini T/R
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Bestand
1.601
Von 0,1823 € bis 0,603 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single Dual Collector | 50 | 1 | 100 | 7 | 1.1@20mA@1A | 3 | 200 to 300|300 to 500 | 200@1A@2V|400@0.3A@2V | 2500 | 0.14@20mA@1A | 13 | Tape and Reel | 4 | PW-Mini | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC4738-GR,LF(T
Trans GP BJT NPN 50V 0.15A 120mW Automotive AEC-Q101 3-Pin SSM T/R
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Bestand
3.092
Von 0,029 € bis 0,0907 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 50 | 1 | 60 | 5 | 0.15 | 200 to 300 | 200@2mA@6V | 120 | 0.25@10mA@100mA | Tape and Reel | 3 | SSM | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPCP8407,LF(O
Trans MOSFET N/P-CH Si 40V 5A/4A 8-Pin PS T/R Automotive AEC-Q101
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Bestand
151
Von 0,2842 € bis 0,6366 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N|P | Dual Dual Drain | Enhancement | 2 | 40 | ±20@N Channel|10@P Channel | 3 | 5@N Channel|4@P Channel | 36.3@10V@N Channel|56.8@10V@P Channel | 11.8@10V@N Channel|18@10V@P Channel | 11.8@N Channel|18@P Channel | 1770 | 505@10V@N Channel|810@10V@P Channel | Tape and Reel | 8 | PS | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2506(TE85L,F)
Trans Digital BJT PNP 50V 0.1A 300mW 5-Pin SMV T/R
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Bestand
20
0,1926 €
pro Stück
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Toshiba | Digital-BJT | PNP | Dual Common Emitter | 50 | 4.7 | 0.1 | 0.1 | 80@10mA@5V | 300 | 0.3@0.25mA@5mA | Tape and Reel | 5 | SMV | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMS06(T2L,TEM,Q)
Diode Schottky 30V 2A 2-Pin M-FLAT
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Bestand
735
Von 0,0684 € bis 0,0872 €
pro Stück
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Toshiba | Gleichrichter | Schottky Diode | Single | 30 | 2 | 40 | 0.37 | 3000 | 135°C/W | 2 | M-FLAT | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK040N65Z,S1F(S MOSFET Silicon N-Channel Mos |
Bestand
1
6,8157 €
pro Stück
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Toshiba | MOSFETs |