Infineon Technologies AG Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Maximum Rate of Rise of Off-State Voltage - (V/us) | Maximum Breakover Voltage - (V) | Category | Bridge Type | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Diode Type | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Peak RMS Reverse Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Power Dissipation - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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IKWH40N67PR7XKSA1
IKWH40N67PR7TRENCHSTOP IGBT 7 PR7 Reverse Conducting IGBT for boost PFC stage with improved EMI characteristics offering the best-in-class performance...
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Bestand
15
Von 1,1695 € bis 1,3014 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA80R600P7XKSA1
Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-220FP Tube
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Bestand
405
Von 0,7464 € bis 1,6672 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 800 | 20 | 80 | 3.5 | 28000 | 8 | 600@10V | 20@10V | 4.5 | 20 | 570@500V | 510@10V | Tube | 3 | TO-220FP | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMW65R030M1HXKSA1
Trans MOSFET N-CH SiC 650V 58A 3-Pin(3+Tab) TO-247 Tube
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Bestand
646
Von 9,7355 € bis 10,1069 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Single | Enhancement | 1 | 650 | 23 | 197000 | 58 | 42@18V | 48@18V | 1643@400V | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC065N06LS5ATMA1
Trans MOSFET N-CH 60V 15A 8-Pin TDSON EP T/R
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Bestand
5.000
0,42 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 60 | ±20 | 50 | 2.3 | 2500 | 15 | 6.5@10V | 10@4.5V | 1400@30V | 5.3@10V|7.2@4.5V | Tape and Reel | 8 | TDSON EP | SON | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAR6405WH6327XTSA1
Diode PIN Attenuator/Switch 150V 100mA 3-Pin SOT-323 T/R Automotive AEC-Q101
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Bestand
12.000
0,0689 €
pro Stück
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Infineon Technologies AG | PIN | Attenuator|Switch | HF|MF|SHF|UHF|VHF | Dual Common Cathode | 150 | 100 | 1.35@100mA | 1.1 | 20@1mA | 0.02 | 250 | 0.35@20V | 1.55 | Tape and Reel | 3 | SOT-323 | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDH12SG60CXKSA2
Diode Schottky 600V 12A 2-Pin(2+Tab) TO-220 Tube
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Bestand
1.461
Von 2,9604 € bis 5,5286 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Schottky Diode | Single | 600 | 12 | 59 | 2.1 | 100 | 125000 | 310(Typ) | 2 | TO-220 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD60R650CEAUMA1
Trans MOSFET N-CH 600V 9.9A 3-Pin(2+Tab) DPAK T/R
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Bestand
2.500
0,2595 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 600 | 20 | 62 | 3.5 | 82000 | 9.9 | 650@10V | 20.5@10V | 2 | 20.5 | 440@100V | 540@10V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFS38N20DTRLP
Trans MOSFET N-CH 200V 43A 3-Pin(2+Tab) D2PAK T/R
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Bestand
23.429
Von 1,1178 € bis 1,8046 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 200 | ±30 | 5 | 3800 | 43 | 54@10V | 60@10V | 60 | 2900@25V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPN60R360P7SATMA1
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) SOT-223 T/R
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Bestand
3.000
Von 0,501 € bis 0,9675 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 600 | 20 | 160 | 4 | 7000 | 9 | 360@10V | 13@10V | 13 | 555@400V | 300@10V | Tape and Reel | 3 | SOT-223 | SOT | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKW30N65ET7XKSA1 | TO-247 650V TRENCHSTOP IGBT7
Trans IGBT Chip N-CH 650V 60A 188W 3-Pin(3+Tab) TO-247 Tube
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Bestand
163
Von 2,2633 € bis 3,5072 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | Trench Stop 7 | N | Single | ±20 | 650 | 60 | 188 | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKZA40N120CS7XKSA1
Trans IGBT Chip N-CH 1200V 82A 357W 4-Pin(4+Tab) TO-247 Tube
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Bestand
148
2,8533 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | N | Single | ±20 | 1200 | 82 | 357 | Tube | 4 | TO-247 | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMWH170R650M1XKSA1
Trans MOSFET N-CH SiC 1.7KV 7.5A 3-Pin(3+Tab) TO-247 Tube
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Bestand
193
Von 2,3306 € bis 2,5034 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Single | Enhancement | 1 | 1700 | 20 | 88000 | 7.5 | 580@15V | 8.1@12V | 337@1000V | 3 | TO-247 | TO | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSC118N10NSGATMA1
Trans MOSFET N-CH 100V 11A 8-Pin TDSON EP T/R
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Bestand
5.000
0,4526 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 100 | ±20 | 4 | 114000 | 11 | 11.8@10V | 42@10V | 1.1 | 42 | 2800@50V | 10@10V | Tape and Reel | 8 | TDSON EP | SON | No | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFP640FH6327XTSA1
Trans RF BJT NPN 4.1V 0.05A 200mW Automotive AEC-Q101 4-Pin TSFP T/R
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Bestand
1.526
Von 0,2453 € bis 0,3032 €
pro Stück
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Infineon Technologies AG | HF-BJT | NPN | Si | Single Dual Emitter | 4.1 | 13 | 1 | 1.2 | 0.05 | 25mA | 200 | 50 to 120 | 110@30mA@3V | 0.09 | 33(Max) | 12.5(Typ) | 28 | 42000(Typ) | 1(Min) | Tape and Reel | 4 | TSFP | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF5803TRPBF
Trans MOSFET P-CH Si 40V 3.4A 6-Pin TSOP T/R
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Bestand
3.000
0,1304 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | P | Single Quad Drain | Enhancement | 1 | 40 | ±20 | 62.5 | 3 | 2000 | 3.4 | 112@10V | 25@10V | 25 | 93 | 1110@25V | 51@12V|70@8V | Tape and Reel | 6 | TSOP | SO | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPD088N06N3GATMA1
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R
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Bestand
2.500
0,368 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 60 | ±20 | 4 | 71000 | 50 | 8.8@10V | 36@10V | 2900@30V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAS4004E6327HTSA1
Diode Schottky Si 0.12A 3-Pin SOT-23 T/R Automotive AEC-Q101
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Bestand
69.970
0,1261 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Schottky Diode | Si | Dual Series | 0.12 | 0.2 | 1@0.04A | 1@30V | 250 | 5 | Tape and Reel | 3 | SOT-23 | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TT570N16KOFHPSA2
SCR Module Diode 1600V 900A(RMS) 17000A 7-Pin BG-PB60AT-1 Tray
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Bestand
1
89,0531 €
pro Stück
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Infineon Technologies AG | SCR Modules | 1000 | 200 | 2.2 | 1600 | 250 | 300 | 1.27@1500A | 900 | 1600 | 600 | 140 | Tray | 7 | BG-PB60AT-1 | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FS150R12KT4B9BOSA1
Diode Module with Chopper-IGBT
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Bestand
7
195,5729 €
pro Stück
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Infineon Technologies AG | IGBT-Module | 1200 | 150 | Tray | 33 | ECONO3-4 | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP023N10N5AKSA1
Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) TO-220 Tube
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Bestand
814
Von 3,1876 € bis 6,1764 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 100 | 20 | 62 | 3.8 | 375000 | 120 | 2.3@10V | 168@10V | 0.4 | 168 | 12000@50V | 2@10V|2.3@6V | Tube | 3 | TO-220 | TO | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB60R180P7ATMA1
Trans MOSFET N-CH 600V 18A 3-Pin(2+Tab) D2PAK T/R
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Bestand
115
Von 1,8875 € bis 2,3583 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 600 | 20 | 62 | 4 | 72000 | 18 | 180@10V | 25@10V | 25 | 1081@400V | 145@10V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N04S4H2ATMA1
Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
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Bestand
7.980
Von 0,717 € bis 0,3498 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 40 | ±20 | 4 | 115000 | 100 | 2.4@10V | 70@10V | 70 | 5520@25V | 2.1@10V|2.4@10V | Tape and Reel | 3 | D2PAK | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD30N06S215ATMA2
Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
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Bestand
602
Von 0,5224 € bis 0,3259 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 55 | ±20 | 4 | 136000 | 30 | 14.7@10V | 41@10V | 1.1 | 41 | 1485@25V | 11.3@10V | Tape and Reel | 3 | DPAK | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF40R207
Trans MOSFET N-CH Si 40V 90A 3-Pin(2+Tab) DPAK T/R
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Bestand
1.985
Von 0,438 € bis 0,6721 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 40 | ±20 | 3.9 | 83000 | 90 | 5.1@10V | 45@10V | 45 | 2110@25V | 4.2@10V|5.9@6V | Tape and Reel | 3 | DPAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPN60R1K5PFD7SATMA1
Trans MOSFET N-CH 600V 3.6A 3-Pin(2+Tab) SOT-223 T/R
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Bestand
3.000
Von 0,3758 € bis 0,8103 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 600 | 20 | 4.5 | 6000 | 3.6 | 1500@10V | 4.6@10V | 4.6 | 169@400V | CoolMOS | Tape and Reel | 3 | SOT-223 | SOT | No | No | No | No | EAR99 | Yes | Yes |