Infineon Technologies AG Diodes, Transistors and Thyristors

Teile-Nr.	Preis	Bestand	Hersteller	Kategorie	Type	Technology	Number of SCRs/Diodes	Maximum Rate of Rise of Off-State Voltage - (V/us)	Maximum Breakover Voltage - (V)	Category	Bridge Type	Maximum Rate of Rise of On-State Current - (A/us)	Material	Frequency Band	Diode Type	Channel Type	Maximum Gate Trigger Voltage - (V)	Configuration	Channel Mode	Repetitive Peak Reverse Voltage - (V)	Peak Reverse Repetitive Voltage - (V)	Maximum Reverse Voltage - (V)	Maximum Gate Trigger Current - (mA)	Maximum Gate Emitter Voltage - (V)	Maximum Collector-Emitter Voltage - (V)	Surge Current Rating - (A)	Peak Average Forward Current - (A)	Maximum Reverse Current - (uA)	Maximum Continuous Forward Current - (A)	Maximum Collector-Base Voltage - (V)	Peak RMS Reverse Voltage - (V)	Number of Elements per Chip	Mode of Operation	Minimum Tuning Ratio	Maximum Holding Current - (mA)	Maximum Continuous DC Collector Current - (A)	Maximum Base-Emitter Voltage - (V)	Typical Input Resistance - (kOhm)	Tuning Ratio Test Condition	Peak Non-Repetitive Forward Surge Current - (A)	Maximum Series Resistance @ Maximum IF - (Ohm)	Maximum Forward Voltage - (V)	Maximum Drain-Source Voltage - (V)	Maximum Base-Emitter Saturation Voltage - (V)	Typical Resistor Ratio	Peak Reverse Current - (uA)	Minimum Quality Factor	Maximum Series Resistance @ Minimum IF - (Ohm)	Maximum Reverse Leakage Current - (uA)	Maximum Gate-Source Voltage - (V)	Maximum DC Collector Current - (A)	Peak On-State Voltage - (V)	Operational Bias Conditions	Minimum Diode Capacitance - (pF)	Maximum Junction Ambient Thermal Resistance	Maximum Gate Threshold Voltage - (V)	Maximum Power Dissipation - (mW)	Maximum Diode Capacitance - (pF)	Maximum Continuous Drain Current - (A)	Typical Carrier Life Time - (us)	RMS On-State Current - (A)	Repetitive Peak Forward Blocking Voltage - (V)	Rated Average On-State Current - (A)	Peak Reverse Recovery Time - (ns)	Minimum DC Current Gain Range	Minimum DC Current Gain	Maximum Drain-Source Resistance - (mOhm)	Typical Gate Charge @ Vgs - (nC)	Repetitive Peak Off-State Current - (mA)	Maximum Junction Case Thermal Resistance	Typical Gate Charge @ 10V - (nC)	Typical Output Capacitance - (pF)	Typical Input Capacitance @ Vds - (pF)	Typical Power Gain - (dB)	Minimum Frequency - (MHz)	Maximum Output Power - (W)	Maximum Collector-Emitter Saturation Voltage - (V)	Maximum Power 1dB Compression - (dBm)	Maximum Frequency - (MHz)	Typical 3rd Order Intercept Point - (dBm)	Maximum Transition Frequency - (MHz)	Maximum Noise Figure - (dB)	Typical Drain-Source Resistance @ 25°C - (mOhm)	Process Technology	Packaging	Rad Hard	Pin Count	Supplier Package	Standard Package Name	CECC Qualified	ESD Protection	ESCC Qualified	Military	AEC Qualified	AEC Qualified Number	Auto motive	P PAP	ECCN Code	SVHC	SVHC Exceeds Threshold

Teile-Nr.	Preis	Bestand	Hersteller	Kategorie	Type	Technology	Maximum Rate of Rise of Off-State Voltage - (V/us)	Category	Maximum Rate of Rise of On-State Current - (A/us)	Material	Channel Type	Maximum Gate Trigger Voltage - (V)	Configuration	Channel Mode	Repetitive Peak Reverse Voltage - (V)	Peak Reverse Repetitive Voltage - (V)	Maximum Gate Trigger Current - (mA)	Maximum Gate Emitter Voltage - (V)	Maximum Collector-Emitter Voltage - (V)	Surge Current Rating - (A)	Maximum Continuous Forward Current - (A)	Maximum Collector-Base Voltage - (V)	Number of Elements per Chip	Maximum Holding Current - (mA)	Maximum Continuous DC Collector Current - (A)	Maximum Base-Emitter Voltage - (V)	Peak Non-Repetitive Forward Surge Current - (A)	Maximum Forward Voltage - (V)	Maximum Drain-Source Voltage - (V)	Maximum Base-Emitter Saturation Voltage - (V)	Peak Reverse Current - (uA)	Maximum Gate-Source Voltage - (V)	Maximum DC Collector Current - (A)	Peak On-State Voltage - (V)	Operational Bias Conditions	Maximum Gate Threshold Voltage - (V)	Maximum Power Dissipation - (mW)	Maximum Diode Capacitance - (pF)	Maximum Continuous Drain Current - (A)	RMS On-State Current - (A)	Repetitive Peak Forward Blocking Voltage - (V)	Rated Average On-State Current - (A)	Peak Reverse Recovery Time - (ns)	Minimum DC Current Gain Range	Minimum DC Current Gain	Maximum Drain-Source Resistance - (mOhm)	Typical Gate Charge @ Vgs - (nC)	Repetitive Peak Off-State Current - (mA)	Typical Gate Charge @ 10V - (nC)	Typical Output Capacitance - (pF)	Typical Input Capacitance @ Vds - (pF)	Typical Power Gain - (dB)	Maximum Collector-Emitter Saturation Voltage - (V)	Maximum Power 1dB Compression - (dBm)	Typical 3rd Order Intercept Point - (dBm)	Maximum Noise Figure - (dB)	Typical Drain-Source Resistance @ 25°C - (mOhm)	Process Technology	Packaging	Pin Count	Supplier Package	Standard Package Name	CECC Qualified	ESD Protection	Military	AEC Qualified	AEC Qualified Number	Auto motive	P PAP	ECCN Code	SVHC	SVHC Exceeds Threshold
DDB6U50N16W1RBPSA1 Trans IGBT Module N-CH 1200V 50A 26-Pin Tray	1+ 5,1822 € 10+ 5,1770 € Menge Bestelleinheiten von 1	Bestand 240 Von 5,177 € bis 5,1822 € pro Stück morgen versandbereit	Infineon Technologies AG	IGBT-Module							N		Single					±20	1200						50																																		Tray	26					No	No		No	No	EAR99	Yes	Yes
IPDQ60R035CFD7XTMA1 Trans MOSFET N-CH 600V 68A 22-Pin HDSOP EP T/R	1+ 5,3113 € 10+ 4,4257 € 25+ 4,0721 € Gurtabschnitt 1+ 5,3113 € 10+ 4,4257 € 25+ 4,0721 € Mehr anzeigen Menge Bestelleinheiten von 1	Bestand 66 Von 4,0721 € bis 5,3113 € pro Stück morgen versandbereit	Infineon Technologies AG	MOSFETs				Power MOSFET			N		Single Ten Source Eleven Drain	Enhancement									1						600			20					367000		68							35@10V	108@10V		108		4346@400V								Tape and Reel	22	HDSOP EP	SO			No	No		No	No	EAR99		No
IKW50N65H5FKSA1 Trans IGBT Chip N-CH 650V 80A 305W 3-Pin(3+Tab) TO-247 Tube	1+ 3,8477 € 10+ 2,1405 € 50+ 2,1145 € 100+ 1,7765 € 200+ 1,7418 € Menge Bestelleinheiten von 1	Bestand 230 Von 1,7418 € bis 3,8477 € pro Stück Versand in vsl. 6 Tagen	Infineon Technologies AG	IGBT-Chip							N		Single					±20	650						80												305																						Tube	3	TO-247	TO	No	Unknown	No	No		No	No	EAR99	No	No
IPB057N06NATMA1 Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) D2PAK T/R	pro Stück 0,5989 € Menge Bestelleinheiten von 1000	Bestand 1.000 0,5989 € pro Stück Versand in vsl. 4 Tagen	Infineon Technologies AG	MOSFETs				Power MOSFET			N		Single	Enhancement									1						60			±20				2.8(Typ)	3000		45							5.7@10V	27@10V		27		2000@30V						4.9@10V\|6.4@6V	OptiMOS	Tape and Reel	3	D2PAK	TO	No		No	No		No	No	EAR99	Yes	Yes
BAS4002LE6327XTMA1 Diode Schottky Si 0.12A 2-Pin TSLP T/R	pro Stück 0,0635 € Menge Bestelleinheiten von 1	Bestand 60.881 0,0635 € pro Stück morgen versandbereit	Infineon Technologies AG	Gleichrichter	Schottky Diode					Si			Single								0.12						0.2	1@0.04A			1@30V						250	5																					Tape and Reel	2	TSLP		No	Yes	No	No		No	No	EAR99	No	No
FP35R12KT4B11BPSA1 Three Phase IGBT Module	1+ 12,1323 € 10+ 11,9243 € Gurtabschnitt 1+ 12,1323 € 10+ 11,9243 € Menge Bestelleinheiten von 1	Bestand 13 Von 11,9243 € bis 12,1323 € pro Stück morgen versandbereit	Infineon Technologies AG	IGBT-Module																																																								23	ECONO2B				No	No		No	No	EAR99		No
IRFP150MPBF Trans MOSFET N-CH 100V 42A 3-Pin(3+Tab) TO-247AC Tube	pro Stück 0,5299 € Menge Bestelleinheiten von 1 Abgekündigt	Bestand 1.469 0,5299 € pro Stück morgen versandbereit	Infineon Technologies AG	MOSFETs				Power MOSFET			N		Single	Enhancement									1						100			±20				4	160000		42							36@10V	110(Max)@10V		110(Max)		1900@25V								Tube	3	TO-247AC	TO	No		No	No		No	No	EAR99	No	No
TT425N16KOFHPSA3 SCR Module 1600V 800A(RMS) 14500A 7-Pin PB60AT-1 Tray	pro Stück 257,3778 € Menge Bestelleinheiten von 1	Bestand 1 257,3778 € pro Stück Versand in vsl. 6 Tagen	Infineon Technologies AG	SCR Modules			1000		120			1.5			1600		250			14500				300										1.5@1500A						800	1600	471						100											Tray	7	PB60AT-1		No	Unknown	No	No		No	No	EAR99	No	No
Meist Gesucht FF150R12KS4HOSA1 Trans IGBT Module N-CH 1200V 225A 1250W 7-Pin 62MM-1 Tray	pro Stück 99,1032 € Menge Bestelleinheiten von 1	Bestand 7 99,1032 € pro Stück Versand in vsl. 4 Tagen	Infineon Technologies AG	IGBT-Module							N		Dual					±20	1200						225												1250																						Tray	7	62MM-1		No		No	No		No	No	EAR99	No	No
BCM856SH6433XTMA1 Trans GP BJT PNP 65V 0.1A 250mW 6-Pin SOT-363 T/R Automotive AEC-Q101	pro Stück 0,0546 € Menge Bestelleinheiten von 1	Bestand 19.364 0,0546 € pro Stück morgen versandbereit	Infineon Technologies AG	GP BJT	PNP			Bipolar Small Signal		Si			Dual						65			80	2			5				0.7(Typ)@0.5mA@10mA\|0.85(Typ)@5mA@100mA			0.1				250							200 to 300	200@2mA@5V					3			0.3@0.5mA@10mA\|0.65@5mA@100mA			10			Tape and Reel	6	SOT-363	SOT	No		No	Yes	AEC-Q101	Yes	Unknown	EAR99		No
BFR843EL3E6327XTSA1 Trans RF BJT NPN 2.25V 0.055A 125mW 3-Pin TSLP T/R Automotive AEC-Q101	1+ 0,2943 € Gurtabschnitt 1+ 0,2943 € Menge Bestelleinheiten von 1	Bestand 6 0,2943 € pro Stück morgen versandbereit	Infineon Technologies AG	HF-BJT	NPN					SiGe			Single						2.25			2.9	1										0.055		1.8V/15mA		125							200 to 300	230@1mA@1.8V					5.26		25.5		7.5(Typ)	23	1.35(Min)			Tape and Reel	3	TSLP		No		No	Yes	AEC-Q101	Yes	Unknown	EAR99	No	No
FP10R06W1E3BOMA1 IGBT Power Module	1+ 27,7309 € 5+ 27,2110 € Menge Bestelleinheiten von 1	Bestand 23 Von 27,211 € bis 27,7309 € pro Stück Versand in vsl. 6 Tagen	Infineon Technologies AG	IGBT-Module															600																																								Tray	15	EASY1B-1		No		No	No		No	No	EAR99		No
TD500N16KOFHPSA2 Thyristor SCR Phase Control Thyristor Module 1.6kV 17kA 5-Pin Tray	pro Stück 189,7836 € Menge Bestelleinheiten von 1	Bestand 2 189,7836 € pro Stück Versand in vsl. 6 Tagen	Infineon Technologies AG	SCR Modules			1000		200			2.2					250							300										1.45@1700A						900								100												5	PB60AT-1		No	Unknown	No	No		No	No	EAR99	No	No
FS3L200R10W3S7FB11BPSA1 3-Level IGBT Module	pro Stück 27,9823 € Menge Bestelleinheiten von 1	Bestand 8 27,9823 € pro Stück morgen versandbereit	Infineon Technologies AG	IGBT-Module																																																								32					No	No		No	No	EAR99	Yes	Yes
IKQ75N120CH3XKSA1 Trans IGBT Chip N-CH 1200V 150A 938W 3-Pin(3+Tab) TO-247 Tube	1+ 11,3413 € 10+ 8,5160 € 25+ 6,9380 € 50+ 6,8687 € Menge Bestelleinheiten von 1	Bestand 55 Von 6,8687 € bis 11,3413 € pro Stück Versand in vsl. 4 Tagen	Infineon Technologies AG	IGBT-Chip							N		Single					±20	1200						150												938																							3	TO-247	TO			No	No		No	No	EAR99	No	No
DDB6U50N22W1RPB11BPSA1 Trans IGBT Module N-CH 1700V 40A 26-Pin Tray	1+ 8,1191 € 10+ 8,0030 € Menge Bestelleinheiten von 1	Bestand 30 Von 8,003 € bis 8,1191 € pro Stück morgen versandbereit	Infineon Technologies AG	IGBT-Module							N		Single					±20	1700						40																																		Tray	26					No	No		No	No	EAR99		No
IGP30N65F5XKSA1 Trans IGBT Chip N-CH 650V 55A 188W 3-Pin(3+Tab) TO-220 Tube	1+ 2,3138 € 10+ 2,0105 € 50+ 1,1266 € 100+ 1,0139 € Menge Bestelleinheiten von 1	Bestand 497 Von 1,0139 € bis 2,3138 € pro Stück Versand in vsl. 6 Tagen	Infineon Technologies AG	IGBT-Chip		Trench Stop 5					N		Single					±20	650						55												188																						Tube	3	TO-220	TO			No	No		No	No	EAR99	No	No
FF300R17KE4HOSA1 Trans IGBT Module N-CH 1700V 440A 1800W 7-Pin 62MM-1 Tray	pro Stück 99,1555 € Menge Bestelleinheiten von 1	Bestand 4 99,1555 € pro Stück morgen versandbereit	Infineon Technologies AG	IGBT-Module							N		Dual					±20	1700						440												1800																						Tray	7	62MM-1		No	Unknown	No	No		No	No	EAR99	No	No
IDFW40E65D1EXKSA1 Diode Switching 650V 42A 3-Pin(3+Tab) TO-247 Tube	pro Stück 1,9533 € Menge Bestelleinheiten von 1	Bestand 273 1,9533 € pro Stück morgen versandbereit	Infineon Technologies AG	Gleichrichter	Switching Diode								Single			650					42							2.1@40A			40						78000						232(Typ)																Tube	3	TO-247	TO			No	No		No	No	EAR99	No	No
AIDK12S65C5ATMA1 Diode Schottky SiC 650V 12A Automotive 3-Pin(2+Tab) TO-263 T/R	1+ 4,4387 € 10+ 3,4811 € 100+ 2,6613 € Menge Bestelleinheiten von 1	Bestand 940 Von 2,6613 € bis 4,4387 € pro Stück morgen versandbereit	Infineon Technologies AG	Gleichrichter	Schottky Diode					SiC			Single Dual Cathode			650					12						50	1.7			70						62000	363(Typ)																					Tape and Reel	3	TO-263	TO			No	Yes	AEC-Q101	Yes	Unknown	EAR99	Yes	Yes
FP10R12W1T4BOMA1 Trans IGBT Module N-CH 1200V 20A 105W 20-Pin EASY1B-1 Tray	pro Stück 27,1937 € Menge Bestelleinheiten von 1	Bestand 21 27,1937 € pro Stück Versand in vsl. 6 Tagen	Infineon Technologies AG	IGBT-Module							N		Array 7					±20	1200						20												105																						Tray	20	EASY1B-1		No	Unknown	No	No		No	No	EAR99		No
IRF6785MTRPBF Trans MOSFET N-CH Si 200V 3.4A 7-Pin Direct-FET MZ T/R	1+ 1,0356 € 10+ 1,0300 € 25+ 1,0246 € 100+ 1,0190 € 250+ 1,0135 € 500+ 1,0079 € 1000+ 1,0024 € 3000+ 0,9968 € 6000+ 0,9913 € Gurtabschnitt 1+ 1,0356 € 10+ 1,0300 € 25+ 1,0246 € 100+ 1,0190 € 250+ 1,0135 € 500+ 1,0079 € 1000+ 1,0024 € 3000+ 0,9968 € 6000+ 0,9913 € Mehr anzeigen Menge Bestelleinheiten von 1	Bestand 95.210 Von 0,9913 € bis 1,0356 € pro Stück morgen versandbereit	Infineon Technologies AG	MOSFETs				Power MOSFET		Si	N		Single Quad Drain Dual Source	Enhancement									1						200			±20				5	2800		3.4							100@10V	26@10V		26		1500@25V						85@10V		Tape and Reel	7	Direct-FET MZ		No		No	No		No	No	EAR99	Yes	Yes
IRFP4768PBF Trans MOSFET N-CH 250V 93A 3-Pin(3+Tab) TO-247AC Tube	1+ 2,5391 € 10+ 2,3034 € Menge Bestelleinheiten von 1	Bestand 2.300 Von 2,3034 € bis 2,5391 € pro Stück Versand in vsl. 6 Tagen	Infineon Technologies AG	MOSFETs				Power MOSFET			N		Single	Enhancement									1						250			±20				5	520000		93							17.5@10V	180@10V		180		10880@50V								Tube	3	TO-247AC	TO	No	Unknown	No	No		No	No	EAR99	Yes	Yes
IDH16G120C5XKSA1 Diode Schottky 1.2KV 40A 2-Pin(2+Tab) TO-220 Tube	pro Stück 4,3304 € Menge Bestelleinheiten von 1	Bestand 23.510 4,3304 € pro Stück morgen versandbereit	Infineon Technologies AG	Gleichrichter	Schottky Diode								Single			1200					40						140	1.95@16A			80						250000																						Tube	2	TO-220	TO	No		No	No		No	No	EAR99	No	No
IDK12G65C5XTMA2 Diode Schottky 650V 12A 3-Pin(2+Tab) D2PAK T/R	pro Stück 1,3903 € Menge Bestelleinheiten von 1000	Bestand 1.000 1,3903 € pro Stück Versand in vsl. 4 Tagen	Infineon Technologies AG	Gleichrichter	Schottky Diode								Single			650					12						97	1.8			190						104000	360(Typ)																					Tape and Reel	3	D2PAK	TO			No	No		No	No	EAR99	No	No