Infineon Technologies AG Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Maximum Breakover Voltage - (V) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Peak On-State Voltage - (V) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IRFR120NTRPBF
Trans MOSFET N-CH Si 100V 9.4A 3-Pin(2+Tab) DPAK T/R
|
Bestand
144.580
Von 0,2842 € bis 0,9429 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 9.4 | 210@10V | 25(Max)@10V | 25(Max) | 48000 | 330@25V | Tape and Reel | Unknown | 3 | DPAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SPW35N60C3FKSA1
Trans MOSFET N-CH 650V 34.6A 3-Pin(3+Tab) TO-247 Tube
|
Bestand
401
Von 3,9026 € bis 4,4523 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 650 | ±20 | 3.9 | 34.6 | 100@10V | 150@10V | 62 | 0.4 | 150 | 313000 | 4500@25V | 81@10V | Tube | 3 | TO-247 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AIMBG120R040M1XTMA1
Trans MOSFET N-CH SiC 1.2KV 54A Automotive 8-Pin(7+Tab) TO-263 T/R
|
Bestand
290
Von 5,8706 € bis 7,7011 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Single Hex Source | Enhancement | 1 | 1200 | 23 | 54 | 50@20V | 43@20V | 268000 | 1264@800V | Tape and Reel | 8 | TO-263 | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDH12G65C5XKSA2
Diode Schottky 650V 12A 2-Pin(2+Tab) TO-220 Tube
|
Bestand
50
Von 1,8065 € bis 2,8906 €
pro Stück
|
Infineon Technologies AG | Gleichrichter | Schottky Diode | Single | 650 | 12 | 97 | 1.7 | 190 | 360(Typ) | 104000 | Tube | 2 | TO-220 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF3415STRLPBF
Trans MOSFET N-CH 150V 43A 3-Pin(2+Tab) D2PAK T/R
|
Bestand
18.525
Von 0,7371 € bis 1,0547 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 150 | ±20 | 4 | 43 | 42@10V | 200(Max)@10V | 200(Max) | 3800 | 2400@25V | Tape and Reel | 3 | D2PAK | TO | No | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSG0810NDIATMA1
Trans MOSFET N-CH 25V 31A/50A 8-Pin TISON EP T/R
|
Bestand
2.680
Von 1,1144 € bis 2,842 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Dual | Enhancement | 2 | 25 | ±16 | 2 | 31@Q1|50@Q2 | 3@10V@Q1|0.9@10V@Q2 | 5.6@4.5V@Q1|16@4.5V@Q2 | 50 | 4.3@Q1|1.8@Q2 | 6250 | 390@Q1|1400@Q2 | 770@12V@Q1|2300@12V@Q2 | 3.2@4.5V|2.4@10V@Q1|1@4.5V|0.7@10V@Q2 | Tape and Reel | 8 | TISON EP | SON | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ISP16DP10LMXTSA1
Trans MOSFET P-CH 100V 2.1A 4-Pin(3+Tab) SOT-223 T/R
|
Bestand
1.000
0,3606 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | P | Single Dual Drain | Enhancement | 1 | 100 | 20 | 2.1 | 160@10V | 21@4.5V|42@10V | 42 | 1800 | 1600@50V | Tape and Reel | 4 | SOT-223 | SOT | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPU60R2K1CEAKMA1
Trans MOSFET N-CH 600V 3.7A 3-Pin(3+Tab) TO-251 Tube
|
Bestand
1.500
0,1266 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 600 | 20 | 3.5 | 3.7 | 2100@10V | 6.7@10V | 62 | 5.6 | 6.7 | 38000 | 140@100V | 1800@10V | Tube | 3 | TO-251 | TO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKA08N65F5XKSA1
Trans IGBT Chip N-CH 650V 10.8A 31.2W 3-Pin(3+Tab) TO-220FP Tube
|
Bestand
300
Von 1,0787 € bis 1,561 €
pro Stück
|
Infineon Technologies AG | IGBT-Chip | N | Single | ±20 | 650 | 10.8 | 31.2 | Tube | 3 | TO-220FP | TO | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IDH02G65C5XKSA2
Diode Schottky SiC 650V 2A 2-Pin(2+Tab) TO-220 Tube
|
Bestand
434
Von 0,6643 € bis 1,5204 €
pro Stück
|
Infineon Technologies AG | Gleichrichter | Schottky Diode | SiC | Single | 650 | 2 | 23 | 1.7 | 70 | 70(Typ) | 36000 | Tube | 2 | TO-220 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLML2244TRPBF
Trans MOSFET P-CH 20V 4.3A 3-Pin SOT-23 T/R
|
Bestand
927.000
Von 0,049 € bis 0,0663 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 20 | ±12 | 4.3 | 54@4.5V | 6.9@4.5V | 1300 | 570@16V | Tape and Reel | 3 | SOT-23 | SOT | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAS4005E6327HTSA1
Diode Schottky Si 0.12A 3-Pin SOT-23 T/R Automotive AEC-Q101
|
Bestand
44.940
Von 0,0352 € bis 0,0817 €
pro Stück
|
Infineon Technologies AG | Gleichrichter | Schottky Diode | Si | Dual Common Cathode | 0.12 | 0.2 | 1@0.04A | 1@30V | 5 | 250 | Tape and Reel | 3 | SOT-23 | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMZA65R030M1HXKSA1
Trans MOSFET N-CH SiC 650V 53A 4-Pin(4+Tab) TO-247 Tube
|
Bestand
126
1,8754 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Single Dual Source | Enhancement | 1 | 650 | 23 | 53 | 42@18V | 48@18V | 197000 | 1643@400V | 4 | TO-247 | TO | No | Unknown | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPAN60R210PFD7SXKSA1
Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220FP Tube
|
Bestand
320
Von 0,9157 € bis 2,0646 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 600 | 20 | 16 | 210@10V | 23@10V | 23 | 25000 | 1015@400V | 3 | TO-220FP | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IQE013N04LM6CGATMA1
Keeping the system in mind, Infineon sets new standards in power MOSFET performance
|
Bestand
762
Von 0,8942 € bis 0,9171 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 40 | 20 | 2 | 31 | 1.35@10V | 20@4.5V|41@10V | 41 | 2500 | 2900@20V | Tape and Reel | 9 | TTFN EP | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA70R900P7SXKSA1
Trans MOSFET N-CH 700V 6A 3-Pin(3+Tab) TO-220FP Tube
|
Bestand
500
1,1835 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 700 | 16 | 3.5 | 6 | 900@10V | 6.8@10V | 80 | 6.8 | 20500 | 211@400V | 740@10V | Tube | 3 | TO-220FP | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKW50N65ET7XKSA1
Trans IGBT Chip N-CH 650V 80A 273W 3-Pin(3+Tab) TO-247 Tube
|
Bestand
110
1,5886 €
pro Stück
|
Infineon Technologies AG | IGBT-Chip | Field Stop|Trench | N | Single | ±20 | 650 | 80 | 273 | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6788
Trans MOSFET N-CH 100V 6A 3-Pin TO-39
|
Bestand
522
Von 16,603 € bis 19,4795 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 100 | ±20 | 6 | 350@10V | 18(Max)@10V | 18(Max) | 20000 | 350@25V | 3 | TO-39 | TO | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IGP30N60H3XKSA1
Trans IGBT Chip N-CH 600V 60A 187W 3-Pin(3+Tab) TO-220AB Tube
|
Bestand
250
Von 1,2907 € bis 2,8004 €
pro Stück
|
Infineon Technologies AG | IGBT-Chip | N | Single | ±20 | 600 | 60 | 187 | Tube | 3 | TO-220AB | TO | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS670S2LH6327XTSA1
Trans MOSFET N-CH 55V 0.54A 3-Pin SOT-23 T/R Automotive AEC-Q101
|
Bestand
604.365
Von 0,0654 € bis 0,2586 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 55 | ±20 | 2 | 0.54 | 650@10V | 1.7@10V | 350 | 1.7 | 360 | 13 | 56@25V | 346@10V|430@4.5V | Tape and Reel | 3 | SOT-23 | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMZC120R040M2HXKSA1
Trans MOSFET N-CH SiC 1.2KV 48A 4-Pin(4+Tab) TO-247 Tube
|
Bestand
190
Von 4,6612 € bis 3,1521 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Single Dual Source | Enhancement | 1 | 1200 | 23 | 48 | 104@18V | 39@18V | 218000 | 1310@800V | Tube | 4 | TO-247 | TO | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FF200R12KE4HOSA1
Trans IGBT Module N-CH 1200V 240A 1100W 7-Pin 62MM-1 Tray
|
Bestand
28
73,8543 €
pro Stück
|
Infineon Technologies AG | IGBT-Module | N | Dual | ±20 | 1200 | 240 | 1100 | Tray | 7 | 62MM-1 | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDWD75G120C5XKSA1
Diode Schottky 1.2KV 186A 2-Pin(2+Tab) TO-247 Tube
|
Bestand
240
Von 11,515 € bis 14,1324 €
pro Stück
|
Infineon Technologies AG | Gleichrichter | 2 | TO-247 | Unknown | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLMS6802TRPBF
Trans MOSFET P-CH Si 20V 5.6A 6-Pin Micro T/R
|
Bestand
32.875
Von 0,1158 € bis 0,4939 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | P | Single Quad Drain | Enhancement | 1 | 20 | ±12 | 5.6 | 50@4.5V | 11@5V | 62.5 | 2000 | 1079@10V | Tape and Reel | 6 | Micro | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAS7002VH6327XTSA1
Diode Schottky Si 0.07A 2-Pin SC-79 T/R Automotive AEC-Q101
|
Bestand
6.927
Von 0,0352 € bis 0,0912 €
pro Stück
|
Infineon Technologies AG | Gleichrichter | Schottky Diode | Si | Single | 0.07 | 0.1 | 1@0.015A | 0.1@50V | 2 | 250 | Tape and Reel | 2 | SC-79 | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No |