Infineon Technologies AG Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Maximum Breakover Voltage - (V) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Peak On-State Voltage - (V) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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IPD60R400CEAUMA1
Trans MOSFET N-CH 600V 14.7A 3-Pin(2+Tab) DPAK T/R
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Bestand
2.420
Von 0,5451 € bis 1,2958 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 600 | 20 | 3.5 | 14.7 | 400@10V | 32@10V | 62 | 1.5 | 32 | 112000 | 700@100V | 340@10V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7862TRPBF
Trans MOSFET N-CH 30V 21A 8-Pin SOIC N T/R
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Bestand
8.000
0,3239 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 2.35 | 21 | 3.3@10V | 30@4.5V | 50 | 2500 | 810 | 4090@15V | 3@10V|3.7@4.5V | Tape and Reel | 8 | SOIC N | SO | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FF4MR20KM1HPHPSA1
Trans MOSFET N-CH SiC 2KV 245A 7-Pin Tray
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Bestand
1
411,4028 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Dual | Enhancement | 2 | 2000 | 20 | 245 | 5.3@18V | 1170@18V | 36100@1200V | 7 | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPC100N04S5L2R6ATMA1
Trans MOSFET N-CH 40V 100A 8-Pin TDSON EP T/R Automotive AEC-Q101
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Bestand
5.000
Von 0,3624 € bis 1,2871 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 40 | ±16 | 2 | 100 | 2.6@10V | 41@10V | 2 | 41 | 75000 | 2250@25V | 2@10V|2.6@4.5V | Tape and Reel | 8 | TDSON EP | SON | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPW60R080P7XKSA1
Trans MOSFET N-CH 600V 37A 3-Pin(3+Tab) TO-247 Tube
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Bestand
240
Von 2,5129 € bis 4,6129 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 600 | 20 | 4 | 37 | 80@10V | 51@10V | 62 | 51 | 129000 | 2180@400V | 69@10V | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRL7472L1TRPBF
Trans MOSFET N-CH Si 40V 68A 15-Pin Direct-FET L8 T/R
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Bestand
3.425
Von 1,9439 € bis 0,7623 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single Hex Drain Octal Source | Enhancement | 1 | 40 | ±20 | 2.5 | 68 | 0.45@10V | 220@4.5V | 40 | 0.44 | 3800 | 2436 | 20082@25V | 0.34@10V|0.52@4.5V | Tape and Reel | 15 | Direct-FET L8 | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPT020N10N3ATMA1
Trans MOSFET N-CH 100V 300A 9-Pin(8+Tab) HSOF T/R
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Bestand
46.221
Von 2,0901 € bis 4,4054 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Seven Source | Enhancement | 1 | 100 | 20 | 3.5 | 300 | 2@10V | 156@10V | 62 | 0.4 | 156 | 375000 | 11200@50V | 1.7@10V|2.2@6V | Tape and Reel | 9 | HSOF | SO | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP057N08N3GXKSA1
Trans MOSFET N-CH 80V 80A 3-Pin(3+Tab) TO-220 Tube
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Bestand
5
0,7835 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 80 | ±20 | 3.5 | 80 | 5.7@10V | 52@10V | 52 | 150000 | 3570@40V | 4.9@10V|6.3@6V | Tube | 3 | TO-220 | TO | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAT5402LRHE6327XTSA1
Diode Schottky Si 0.2A 2-Pin TSLP T/R
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Bestand
13.450
Von 0,1494 € bis 0,2151 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Schottky Diode | Si | Single | 0.2 | 0.6 | 0.8@0.1A | 2@25V | 10 | 5 | 230 | Tape and Reel | 2 | TSLP | No | No | Unknown | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFR193L3E6327XTMA1
Trans RF BJT NPN 12V 0.08A 580mW 3-Pin TSLP T/R
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Bestand
8.824
Von 0,1104 € bis 0,2673 €
pro Stück
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Infineon Technologies AG | HF-BJT | NPN | Single | 12 | 1 | 20 | 2 | 0.08 | 8V/30mA | 50 to 120 | 70@30mA@8V | 2.25 | 580 | 0.63 | 19 | 8000(Typ) | 1.6(Min) | Tape and Reel | 3 | TSLP | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP130N20NM6AKSA1
Trans MOSFET N-CH 200V 11A 3-Pin(3+Tab) TO-220 Tube
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Bestand
377
Von 1,6214 € bis 1,9713 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 200 | 20 | 11 | 12@15V | 37@10V | 37 | 3800 | 2900@100V | Tube | 3 | TO-220 | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF7458TRPBF
Trans MOSFET N-CH 30V 14A 8-Pin SOIC T/R
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Bestand
4.116
Von 0,4619 € bis 0,2003 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±30 | 4 | 14 | 8@16V | 39@10V | 50 | 39 | 2500 | 1100 | 2410@15V | 6.3@16V|7@10V | Tape and Reel | 8 | SOIC | SO | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPW95R130PFD7XKSA1
Trans MOSFET N-CH 950V 36.5A 3-Pin(3+Tab) TO-247 Tube
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Bestand
56
Von 2,284 € bis 2,3531 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 950 | 20 | 36.5 | 130@10V | 141@10V | 141 | 227000 | 4170@400V | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC500N20NS3GATMA1
Trans MOSFET N-CH 200V 24A 8-Pin TDSON EP T/R
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Bestand
10.173
Von 0,5568 € bis 0,5853 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 200 | ±20 | 4 | 24 | 50@10V | 15@10V | 75 | 15 | 96000 | 1190@100V | 42@10V | Tape and Reel | 8 | TDSON EP | SON | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFSL4010PBF
Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-262 Tube
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Bestand
1.400
123,0426 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 180 | 4.7@10V | 143@10V | 0.4 | 143 | 375000 | 9575@50V | Tube | 3 | TO-262 | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMBG120R078M2HXTMA1
Trans MOSFET N-CH SiC 1.2KV 29A 8-Pin(7+Tab) D2PAK T/R
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Bestand
557
Von 2,7099 € bis 2,9396 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Single Quint Source | Enhancement | 1 | 1200 | 23 | 29 | 206@18V | 20.6@18V | 158000 | 700@800V | Tape and Reel | 8 | D2PAK | TO | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFR120NTRPBF
Trans MOSFET N-CH Si 100V 9.4A 3-Pin(2+Tab) DPAK T/R
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Bestand
144.580
Von 0,2842 € bis 0,9429 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 9.4 | 210@10V | 25(Max)@10V | 25(Max) | 48000 | 330@25V | Tape and Reel | Unknown | 3 | DPAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMW120R040M1HXKSA1
Trans MOSFET N-CH SiC 1.2KV 55A 3-Pin(3+Tab) TO-247 Tube
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Bestand
130
5,729 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Single | Enhancement | 1 | 1200 | 20 | 55 | 54.4@18V | 51@18V | 227000 | 1620@800V | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB024N10N5ATMA1
Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) D2PAK T/R
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Bestand
1.000
Von 2,3954 € bis 3,9737 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quint Source | Enhancement | 1 | 100 | 20 | 3.8 | 180 | 2.4@10V | 111@10V | 62 | 0.6 | 111 | 250000 | 7870@50V | 2@10V|2.4@6V | Tape and Reel | 7 | D2PAK | TO | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BCR133E6327HTSA1
Trans Digital BJT NPN 50V 0.1A 200mW 3-Pin SOT-23 T/R Automotive AEC-Q101
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Bestand
93.000
0,0483 €
pro Stück
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Infineon Technologies AG | Digital-BJT | NPN | Single | 50 | 10 | 1 | 0.1 | 30@5mA@5V | 200 | 0.3@0.5mA@10mA | Tape and Reel | 3 | SOT-23 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFS4321TRL7PP
Trans MOSFET N-CH 150V 86A 7-Pin(6+Tab) D2PAK T/R
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Bestand
28
Von 1,7786 € bis 2,1881 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quint Source | Enhancement | 1 | 150 | ±30 | 5 | 86 | 14.7@10V | 71@10V | 71 | 350000 | 4460@50V | 11.7@10V | Tape and Reel | 7 | D2PAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FF200R12KE4HOSA1
Trans IGBT Module N-CH 1200V 240A 1100W 7-Pin 62MM-1 Tray
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Bestand
28
73,8543 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Dual | ±20 | 1200 | 240 | 1100 | Tray | 7 | 62MM-1 | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKY75N120CH7XKSA1
Trans IGBT Chip N-CH 1200V 83A 549W 4-Pin(4+Tab) TO-247 Tube
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Bestand
96
4,3356 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | N | Single | ±20 | 1200 | 83 | 549 | Tube | 4 | TO-247 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLMS6802TRPBF
Trans MOSFET P-CH Si 20V 5.6A 6-Pin Micro T/R
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Bestand
32.875
Von 0,1158 € bis 0,4939 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | P | Single Quad Drain | Enhancement | 1 | 20 | ±12 | 5.6 | 50@4.5V | 11@5V | 62.5 | 2000 | 1079@10V | Tape and Reel | 6 | Micro | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFH8201TRPBF
Trans MOSFET N-CH 25V 49A 8-Pin PQFN EP T/R
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Bestand
4.000
0,5535 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 25 | ±20 | 2.35 | 49 | 0.95@10V | 56@4.5V|111@10V | 35 | 21 | 111 | 3600 | 1730 | 7330@13V | 0.8@10V|1.2@4.5V | Tape and Reel | 8 | PQFN EP | QFN | No | Unknown | No | No | No | No | EAR99 | Yes | Yes |