Infineon Technologies AG Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Maximum Breakover Voltage - (V) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Peak On-State Voltage - (V) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STT3400N18P76XPSA1
Soft Starter Module
|
Bestand
2
554,4803 €
pro Stück
|
Infineon Technologies AG | SCR Modules | Tray | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SPW17N80C3FKSA1
Trans MOSFET N-CH 800V 17A 3-Pin(3+Tab) TO-247 Tube
|
Bestand
25.703
Von 1,6171 € bis 1,8236 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 800 | ±20 | 3.9 | 17 | 290@10V | 88@10V | 62 | 0.55 | 88 | 227000 | 94 | 2300@100V | 250@10V | Tube | 3 | TO-247 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMW65R010M2HXKSA1
Trans MOSFET N-CH SiC 650V 130A Automotive 3-Pin(3+Tab) TO-247 Tube
|
Bestand
232
Von 11,2731 € bis 13,3031 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Single | Enhancement | 1 | 650 | 23 | 130 | 13.1@18V | 112@18V | 440000 | 4001@400V | Tube | 3 | TO-247 | TO | Unknown | Yes | Unknown | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD50N06S214ATMA2
Trans MOSFET N-CH 55V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
|
Bestand
290.000
Von 0,5005 € bis 0,515 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 55 | ±20 | 4 | 50 | 14.4@10V | 39@10V | 1.1 | 39 | 136000 | 1485@25V | 10.8@10V | Tape and Reel | 3 | DPAK | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAW56SH6327XTSA1
Diode Switching 85V 0.2A 6-Pin SOT-363 T/R Automotive AEC-Q101
|
Bestand
14.200
0,0569 €
pro Stück
|
Infineon Technologies AG | Gleichrichter | Switching Diode | Double Dual Common Anode | 85 | 0.2 | 4.5 | 1.25@0.15A | 0.15@70V | 4 | 250 | Tape and Reel | 6 | SOT-363 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFH9310TRPBF
Trans MOSFET P-CH Si 30V 21A 8-Pin PQFN EP T/R
|
Bestand
164
Von 0,584 € bis 1,3735 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | P | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 21 | 4.6@10V | 58@4.5V|110@10V | 110 | 3100 | 5250@15V | 3.7@10V|5.7@4.5V | Tape and Reel | 8 | PQFN EP | QFN | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA95R310PFD7XKSA1
Trans MOSFET N-CH 950V 8.7A 3-Pin(3+Tab) TO-220FP Tube
|
Bestand
553
Von 1,1403 € bis 2,9111 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 950 | 20 | 8.7 | 310@10V | 61@10V | 61 | 31000 | 1765@400V | Tube | 3 | TO-220FP | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC052N03LSATMA1
Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP T/R
|
Bestand
5.023
Von 0,2059 € bis 0,4183 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 2 | 17 | 5.2@10V | 5.9@4.5V|12@10V | 12 | 2500 | 770@15V | 4.3@10V|5.8@4.5V | Tape and Reel | 8 | TDSON EP | SON | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD80R3K3P7ATMA1
Trans MOSFET N-CH 800V 1.9A 3-Pin(2+Tab) DPAK T/R
|
Bestand
1.044
Von 0,2133 € bis 0,2351 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 800 | 20 | 3.5 | 1.9 | 3300@10V | 5.8@10V | 62 | 5.8 | 18000 | 120@500V | 2800@10V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSZ068N06NSATMA1
Trans MOSFET N-CH 60V 13A 8-Pin TSDSON EP T/R
|
Bestand
30.990
1,3821 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 60 | ±20 | 3.3 | 13 | 6.8@10V | 17@10V | 2.7 | 17 | 2100 | 300 | 1200@30V | 5.6@10V|8.2@6V | Tape and Reel | 8 | TSDSON EP | SON | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMDQ75R090M1HXUMA1
Trans MOSFET N-CH SiC 750V 24A 22-Pin HDSOP EP T/R
|
Bestand
682
Von 2,3617 € bis 2,4749 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Single Ten Source Eleven Drain | Enhancement | 1 | 750 | 23 | 24 | 117@18V | 15@18V | 128000 | 542@500V | 22 | HDSOP EP | SO | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKN03N60RC2ATMA1
Reverse Conducting Drive 2 offering Cost Effective IGBT
|
Bestand
3.000
Von 0,2192 € bis 0,476 €
pro Stück
|
Infineon Technologies AG | IGBT-Chip | 3 | SOT-223 | SOT | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ISS55EP06LMXTSA1
Trans MOSFET P-CH 60V 0.18A 3-Pin SOT-23 T/R
|
Bestand
57.000
Von 0,022 € bis 0,0362 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Small Signal | P | Single | Enhancement | 1 | 60 | 20 | 0.18 | 5500@10V | 0.59@10V | 0.59 | 400 | 18@30V | 4344@10V|5240@4.5V | Tape and Reel | 3 | SOT-23 | SOT | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IGLD60R070D1AUMA1
Enhancement-Mode Power GaN Transistor
|
Bestand
9
11,6445 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Tape and Reel | 8 | LSON EP | SON | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF5803TRPBF
Trans MOSFET P-CH Si 40V 3.4A 6-Pin TSOP T/R
|
Bestand
3.000
0,1304 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | P | Single Quad Drain | Enhancement | 1 | 40 | ±20 | 3 | 3.4 | 112@10V | 25@10V | 62.5 | 25 | 2000 | 93 | 1110@25V | 51@12V|70@8V | Tape and Reel | 6 | TSOP | SO | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SN7002WH6327XTSA1
Trans MOSFET N-CH 60V 0.23A 3-Pin SOT-323 T/R Automotive AEC-Q101
|
Bestand
5.770
Von 0,0672 € bis 0,1088 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Small Signal | N | Single | Enhancement | 1 | 60 | ±20 | 1.8 | 0.23 | 5000@10V | 1@10V | 1 | 500 | 34@25V | Tape and Reel | 3 | SOT-323 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ISC015N04NM5ATMA1
Trans MOSFET N-CH 40V 33A 8-Pin TDSON EP T/R
|
Bestand
5.000
0,445 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 40 | 20 | 33 | 1.5@10V | 51@10V | 51 | 3000 | 3700@20V | Tape and Reel | 8 | TDSON EP | SON | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
BSZ340N08NS3GATMA1
Trans MOSFET N-CH 80V 6A 8-Pin TSDSON EP T/R
|
Bestand
1.985
Von 0,2974 € bis 1,0259 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 80 | ±20 | 3.5 | 6 | 34@10V | 6.8@10V | 6.8 | 2100 | 470@40V | 27@10V|38@6V | OptiMOS | Tape and Reel | 8 | TSDSON EP | SON | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IGW50N60H3FKSA1
Trans IGBT Chip N-CH 600V 100A 333W 3-Pin(3+Tab) TO-247 Tube
|
Bestand
1.160
Von 1,4117 € bis 3,9769 €
pro Stück
|
Infineon Technologies AG | IGBT-Chip | N | Single | ±20 | 600 | 100 | 333 | Tube | 3 | TO-247 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| F435MR07W1D7S8B11ABPSA1 EasyPACK 1B module with CoolMOS CFD7A Automotive MOSFET and PressFIT / NTC |
Bestand
24
Von 40,3058 € bis 25,2154 €
pro Stück
|
Infineon Technologies AG | IGBT-Module | 23 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BCR192E6327HTSA1
Trans Digital BJT PNP 50V 0.1A 200mW 3-Pin SOT-23 T/R Automotive AEC-Q101
|
Bestand
56.256
0,0244 €
pro Stück
|
Infineon Technologies AG | Digital-BJT | PNP | Single | 50 | 22 | 0.47 | 0.1 | 70@5mA@5V | 200 | 0.3@0.5mA@10mA | Tape and Reel | 3 | SOT-23 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFU7440PBF
Trans MOSFET N-CH Si 40V 180A 3-Pin(3+Tab) IPAK Tube
|
Bestand
1.871
Von 0,6634 € bis 1,9523 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 40 | ±20 | 3.9 | 180 | 2.4@10V | 89@10V | 89 | 140000 | 4610@25V | 1.9@10V|2.8@6V | Tube | 3 | IPAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD60R650CEAUMA1
Trans MOSFET N-CH 600V 9.9A 3-Pin(2+Tab) DPAK T/R
|
Bestand
2.500
0,2595 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 600 | 20 | 3.5 | 9.9 | 650@10V | 20.5@10V | 62 | 2 | 20.5 | 82000 | 440@100V | 540@10V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFS38N20DTRLP
Trans MOSFET N-CH 200V 43A 3-Pin(2+Tab) D2PAK T/R
|
Bestand
23.429
Von 1,1178 € bis 1,8046 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 200 | ±30 | 5 | 43 | 54@10V | 60@10V | 60 | 3800 | 2900@25V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB019N08N5ATMA1
Trans MOSFET N-CH 80V 180A 7-Pin(6+Tab) D2PAK T/R
|
Bestand
1.000
1,528 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quint Source | Enhancement | 1 | 80 | 20 | 3.8 | 180 | 1.95@10V | 99@10V | 99 | 224000 | 6900@40V | 1.7@10V|2.3@6V | Tape and Reel | 7 | D2PAK | TO | No | No | No | No | EAR99 | Yes | Yes |