Infineon Technologies AG Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Maximum Breakover Voltage - (V) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Peak On-State Voltage - (V) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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IPB80P04P405ATMA2
Trans MOSFET P-CH 40V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
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Bestand
1.000
Von 1,2275 € bis 2,5051 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 40 | ±20 | 4 | 80 | 4.9@10V | 116@10V | 1.2 | 116 | 125000 | 7900@25V | 3.7@10V|4@10V | Tape and Reel | 3 | D2PAK | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMZA120R040M2HXKSA1
Trans MOSFET N-CH SiC 1.2KV 48A Automotive Tube
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Bestand
240
Von 4,7908 € bis 6,0616 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Single Dual Source | Enhancement | 1 | 1200 | 23 | 48 | 51@18V | 39@18V | 218000 | 1310@800V | Tube | Unknown | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FF650R17IE4BOSA1
Trans IGBT Module N-CH 1700V 930A 4150W 10-Pin PRIME2-1 Tray
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Bestand
3
355,0374 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Dual | ±20 | 1700 | 930 | 4150 | Tray | 10 | PRIME2-1 | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFS7437TRLPBF
Trans MOSFET N-CH Si 40V 250A 3-Pin(2+Tab) D2PAK T/R
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Bestand
19
Von 0,5241 € bis 0,7336 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 40 | ±20 | 3.9 | 250 | 1.8@10V | 150@10V | 150 | 230000 | 7330@25V | 1.4@10V|2@6V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AUIRF1404
Trans MOSFET N-CH Si 40V 202A 3-Pin(3+Tab) TO-220AB Tube Automotive AEC-Q101
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Bestand
1.000
Von 2,7038 € bis 4,1896 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 40 | ±20 | 4 | 202 | 4@10V | 131@10V | 131 | 333000 | 5669@25V | 3.5@10V | HEXFET | Tube | 3 | TO-220AB | TO | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS84PH6327XTSA2
Trans MOSFET P-CH 60V 0.17A 3-Pin SOT-23 T/R Automotive AEC-Q101
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Bestand
13.882
Von 0,025 € bis 0,2073 €
pro Stück
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Infineon Technologies AG | MOSFETs | Small Signal | P | Single | Enhancement | 1 | 60 | ±20 | 2 | 0.17 | 8000@10V | 1@10V | 350 | 1 | 360 | 6 | 15@25V | 5800@10V|8000@4.5V | Tape and Reel | 3 | SOT-23 | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB030N08N3GATMA1
Trans MOSFET N-CH 80V 160A 7-Pin(6+Tab) D2PAK T/R
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Bestand
3.000
0,954 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quint Source | Enhancement | 1 | 80 | ±20 | 3.5 | 160 | 3@10V | 88@10V | 88 | 214000 | 6100@40V | 2.5@10V|3.3@6V | Tape and Reel | 7 | D2PAK | TO | No | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD50N06S4L08ATMA2
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
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Bestand
10.000
Von 0,3334 € bis 0,3521 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 60 | ±16 | 2.2 | 50 | 7.8@10V | 49@10V | 2.1 | 49 | 71000 | 3680@25V | 6.3@10V|9@4.5V | Tape and Reel | 3 | DPAK | TO | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SPB20N60S5ATMA1
Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R
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Bestand
3.000
1,7278 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 600 | ±20 | 20 | 190@10V | 79@10V | 0.6 | 79 | 208000 | 3000@25V | 160@10V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKW75N60TFKSA1
Trans IGBT Chip N-CH 600V 80A 428W 3-Pin(3+Tab) TO-247 Tube
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Bestand
340
Von 3,0324 € bis 6,0465 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | Field Stop|Trench | N | Single | ±20 | 600 | 80 | 428 | Tube | 3 | TO-247 | TO | No | Unknown | No | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IAUC80N04S6L032ATMA1
Trans MOSFET N-CH 40V 80A Automotive AEC-Q101 8-Pin TDSON EP T/R
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Bestand
5.000
Von 0,2881 € bis 1,028 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 40 | ±16 | 80 | 3.29@10V | 19@10V | 19 | 50000 | 1165@25V | Tape and Reel | 8 | TDSON EP | SON | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDH10SG60CXKSA2
Diode Schottky 600V 10A 2-Pin(2+Tab) TO-220 Tube
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Bestand
320
Von 1,3483 € bis 1,9736 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Schottky Diode | Single | 600 | 10 | 51 | 2.1 | 90 | 120000 | Tube | 2 | TO-220 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HFA35HB60C
Diode Switching 30A 3-Pin(3+Tab) TO-254AA
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Bestand
1.399
205,1097 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Switching Diode | Dual Common Cathode | 600 | 30 | 150 | 2.3 | 10 | 88 | 63000 | 3 | TO-254AA | TO | No | Yes | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS126H6327XTSA2
Trans MOSFET N-CH 600V 0.021A 3-Pin SOT-23 T/R Automotive AEC-Q101
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Bestand
194.580
Von 0,0795 € bis 0,5031 €
pro Stück
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Infineon Technologies AG | MOSFETs | Small Signal | N | Single | Depletion | 1 | 600 | ±20 | 1.6 | 0.021 | 500000@10V | 1.4@5V | 250 | 500 | 2.4 | 21@25V | 280000@10V|320000@0V | Tape and Reel | 3 | SOT-23 | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IGW30N65L5XKSA1
Trans IGBT Chip N-CH 650V 85A 227W 3-Pin(3+Tab) TO-247 Tube
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Bestand
240
Von 1,5756 € bis 3,6368 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | Trench Stop 5 | N | Single | ±20 | 650 | 85 | 227 | Tube | 3 | TO-247 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDW80C65D1XKSA1
Diode Switching 650V 80A 3-Pin(3+Tab) TO-247 Tube
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Bestand
130
Von 1,0952 € bis 1,6392 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Switching Diode | Dual Common Cathode | 650 | 80 | 320 | 1.7@40A | 40 | 129(Typ) | 179000 | Tube | 3 | TO-247 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKZA75N65SS5XKSA1
Trans IGBT Chip N-CH 650V 80A 395W 4-Pin(4+Tab) TO-247 Tube
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Bestand
216
11,0571 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | N | Single | ±20 | 650 | 80 | 395 | 4 | TO-247 | TO | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TT250N16KOFHPSA1
SCR Module 1600V 410A(RMS) 9100A 7-Pin PB50-1 Tray
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Bestand
3
147,7163 €
pro Stück
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Infineon Technologies AG | SCR Modules | 150 | 1000 | 50 | 2 | 200 | 300 | 1600 | 1.5@800A | 1600 | 250 | 410 | 7 | PB50-1 | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BB914E6327HTSA1
Diode VAR Cap Dual Common Cathode 20V 42.5pF 3-Pin SOT-23 T/R
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Bestand
11.466
Von 0,0866 € bis 0,2177 €
pro Stück
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Infineon Technologies AG | Varaktors | Tuner | Dual Common Cathode | 20 | 0.02 | 2.28 | 2V/8V | 42.5@2V | Tape and Reel | 3 | SOT-23 | SOT | No | No | Unknown | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB65R090CFD7ATMA1
Trans MOSFET N-CH 700V 25A 3-Pin(2+Tab) D2PAK T/R
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Bestand
980
Von 2,3108 € bis 4,3451 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 700 | ±20 | 25 | 90@10V | 53@10V | 53 | 127000 | 2513@400V | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMDQ65R020M2HXUMA1
SiC MOSFET
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Bestand
600
Von 6,2879 € bis 7,2597 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Single Ten Source Eleven Drain | Enhancement | 1 | 650 | 23 | 97 | 24@18V | 57@18V | 394000 | 2038@400V | 22 | HDSOP EP | SO | Unknown | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP4568PBF
Trans MOSFET N-CH Si 150V 171A 3-Pin(3+Tab) TO-247AC Tube
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Bestand
4.401
Von 2,5863 € bis 5,2867 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 150 | ±30 | 5 | 171 | 5.9@10V | 151@10V | 40 | 0.29 | 151 | 517000 | 977 | 10470@50V | 4.8@10V | Tube | 3 | TO-247AC | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP3703PBF
Trans MOSFET N-CH 30V 210A 3-Pin(3+Tab) TO-247AC Tube
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Bestand
8.077
1,5376 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 30 | ±20 | 4 | 210 | 2.8@10V | 209@10V | 209 | 3800 | 8250@25V | HEXFET | Tube | 3 | TO-247AC | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMBG65R039M1HXTMA1
Trans MOSFET N-CH SiC 650V 54A 8-Pin(7+Tab) D2PAK T/R
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Bestand
667
Von 4,1202 € bis 2,2114 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Single Hex Source | Enhancement | 1 | 650 | 23 | 54 | 51@18V | 41@18V | 211000 | 1393@400V | Tape and Reel | 8 | D2PAK | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAT5404WH6327XTSA1
Diode Schottky Si 0.2A 3-Pin SOT-323 T/R Automotive AEC-Q101
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Bestand
28.760
Von 0,1123 € bis 0,1797 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Schottky Diode | Si | Dual Series | 0.2 | 0.6 | 0.8@0.1A | 2@25V | 10 | 5 | 230 | Tape and Reel | 3 | SOT-323 | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No |