Infineon Technologies AG Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Maximum Rate of Rise of Off-State Voltage - (V/us) | Maximum Breakover Voltage - (V) | Category | Bridge Type | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Diode Type | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Peak RMS Reverse Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Power Dissipation - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IPW65R041CFD7XKSA1
Trans MOSFET N-CH 650V 50A 3-Pin(3+Tab) TO-247 Tube
|
Bestand
92
Von 4,639 € bis 7,5367 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 650 | 20 | 4.5 | 227000 | 50 | 41@10V | 102@10V | 102 | 4975@400V | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB65R090CFD7ATMA1
Trans MOSFET N-CH 700V 25A 3-Pin(2+Tab) D2PAK T/R
|
Bestand
980
Von 2,3173 € bis 4,3574 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 700 | ±20 | 127000 | 25 | 90@10V | 53@10V | 53 | 2513@400V | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMW65R026M2HXKSA1
Trans MOSFET N-CH SiC 650V 64A Automotive 3-Pin(3+Tab) TO-247 Tube
|
Bestand
240
Von 5,5468 € bis 6,8541 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Single | Enhancement | 1 | 650 | 23 | 227000 | 64 | 33@18V | 42@18V | 1499@400V | Tube | 3 | TO-247 | TO | Unknown | Yes | Unknown | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP023N08N5AKSA1
Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) TO-220 Tube
|
Bestand
1.304
1,1591 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 80 | 20 | 62 | 3.8 | 300000 | 120 | 2.3@10V | 133@10V | 0.5 | 133 | 9300@40V | 2@10V|2.4@6V | Tube | 3 | TO-220 | TO | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB80N04S4L04ATMA1
Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
|
Bestand
1.000
0,5827 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 40 | 20 | 2.2 | 71000 | 80 | 4@10V | 46@10V | 2.1 | 46 | 3610@25V | 3.4@10V|3.7@10V|4.8@4.5V|5.1@4.5V | Tape and Reel | 3 | D2PAK | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFS4610TRLPBF
Trans MOSFET N-CH 100V 73A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
|
Bestand
1.500
2,7894 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 190000 | 73 | 14@10V | 90@10V | 90 | 3550@50V | 11@10V | Tape and Reel | 3 | D2PAK | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPI60R280C6XKSA1
Trans MOSFET N-CH 600V 13.8A 3-Pin(3+Tab) TO-262 Tube
|
Bestand
300
1,0837 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 600 | 20 | 62 | 3.5 | 104000 | 13.8 | 280@10V | 43@10V | 1.2 | 43 | 950@100V | 250@10V | Tube | 3 | TO-262 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD60N10S412ATMA1
Trans MOSFET N-CH 100V 60A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
|
Bestand
52.405
Von 0,6158 € bis 0,6333 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 100 | ±20 | 3.5 | 94000 | 60 | 12.2@10V | 26@10V | 26 | 1900@25V | 10.4@10V | Tape and Reel | 3 | DPAK | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFL024ZTRPBF
Trans MOSFET N-CH Si 55V 5.1A 4-Pin(3+Tab) SOT-223 T/R
|
Bestand
15.478
Von 0,1775 € bis 0,48 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single Dual Drain | Enhancement | 1 | 55 | ±20 | 120 | 4 | 2800 | 5.1 | 57.5@10V | 9.1@10V | 9.1 | 210 | 340@25V | 46.2@10V | Tape and Reel | 4 | SOT-223 | SOT | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FF200R12KS4
Trans IGBT Module N-CH 1200V 275A 1400W 7-Pin 62MM-1 Tray
|
Bestand
3
197,3746 €
pro Stück
|
Infineon Technologies AG | IGBT-Module | N | Dual | ±20 | 1200 | 275 | 1400 | Tray | 7 | 62MM-1 | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TT280N16SOFHPSA1
SCR Module Diode 1600V 520A(RMS) 9000A 7-Pin PB50SB-1 Tray
|
Bestand
3
78,7454 €
pro Stück
|
Infineon Technologies AG | SCR Modules | 1000 | 100 | 2 | 1600 | 150 | 150 | 1.77@750A | 520 | 1600 | 280 | 30 | Tray | 7 | PB50SB-1 | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA70R600P7SXKSA1
Trans MOSFET N-CH 700V 8.5A 3-Pin(3+Tab) TO-220FP Tube
|
Bestand
1.230
Von 0,2886 € bis 0,2952 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 700 | 16 | 80 | 3.5 | 24900 | 8.5 | 600@10V | 10.5@10V | 5 | 10.5 | 364@400V | 490@10V | 3 | TO-220FP | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA65R190CFDXKSA2
Trans MOSFET N-CH 650V 17.5A 3-Pin(3+Tab) TO-220FP Tube
|
Bestand
500
Von 1,1385 € bis 1,5671 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 650 | 20 | 80 | 4.5 | 34000 | 17.5 | 190@10V | 68@10V | 3.7 | 68 | 1850@100V | Tube | 3 | TO-220FP | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKA08N65F5XKSA1
Trans IGBT Chip N-CH 650V 10.8A 31.2W 3-Pin(3+Tab) TO-220FP Tube
|
Bestand
300
Von 1,0817 € bis 1,5655 €
pro Stück
|
Infineon Technologies AG | IGBT-Chip | N | Single | ±20 | 650 | 10.8 | 31.2 | Tube | 3 | TO-220FP | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SPP80P06PHXKSA1
Trans MOSFET P-CH 60V 80A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101
|
Bestand
1.389
Von 1,4218 € bis 1,7614 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 60 | ±20 | 62 | 4 | 340000 | 80 | 23@10V | 115@10V | 0.4 | 115 | 1252 | 4026@25V | 21@10V | Tube | 3 | TO-220 | TO | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB055N08NF2SATMA1
Trans MOSFET N-CH 80V 18A 3-Pin(2+Tab) D2PAK T/R
|
Bestand
800
0,6069 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 80 | 20 | 3800 | 18 | 5.5@10V | 36@10V | 36 | 2500@40V | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FP15R12W1T4B11BOMA1
Trans IGBT Module N-CH 1200V 28A 130W 23-Pin EASY1B-2 Tray
|
Bestand
14
Von 27,5479 € bis 29,627 €
pro Stück
|
Infineon Technologies AG | IGBT-Module | N | Hex | ±20 | 1200 | 28 | 130 | Tray | 23 | EASY1B-2 | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FF2MR12KM1HOSA1
Trans MOSFET N-CH SiC 1.2KV 500A Tray
|
Bestand
10
208,1252 €
pro Stück
|
Infineon Technologies AG | MOSFETs | SiC | N | Dual | Enhancement | 2 | 1200 | 20 | 500 | 2.13(Typ)@15V | 1340@15V | 39700@800V | Tray | 7 | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFQ19SH6327XTSA1
Trans RF BJT NPN 15V 0.12A 1000mW 4-Pin(3+Tab) SOT-89 T/R Automotive AEC-Q101
|
Bestand
773
Von 0,1793 € bis 0,1984 €
pro Stück
|
Infineon Technologies AG | HF-BJT | NPN | Si | Single Dual Collector | 15 | 20 | 1 | 3 | 0.12 | 8V/70mA | 1000 | 50 to 120 | 70@70mA@8V | 1.05 | 11.5 | 22(Typ) | 32 | 5500(Typ) | 3(Min) | Tape and Reel | 4 | SOT-89 | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC052N03LSATMA1
Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP T/R
|
Bestand
5.023
Von 0,2064 € bis 0,4195 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 2 | 2500 | 17 | 5.2@10V | 5.9@4.5V|12@10V | 12 | 770@15V | 4.3@10V|5.8@4.5V | Tape and Reel | 8 | TDSON EP | SON | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB021N10NM5LF2ATMA1
Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) D2PAK T/R
|
Bestand
860
Von 2,0938 € bis 2,689 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 100 | 20 | 3800 | 30 | 2@15V | 165@10V | 165 | 13000@50V | 3 | D2PAK | TO | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPT60T022S7XTMA1
Trans MOSFET N-CH 600V 23A 9-Pin HSOF EP T/R
|
Bestand
15
Von 4,8538 € bis 4,9361 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Seven Source | Enhancement | 1 | 600 | 20 | 390000 | 23 | 22@12V | 150@12V | 5640@300V | Tape and Reel | 9 | HSOF EP | SO | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPDQ65R080CFD7AXTMA1
Trans MOSFET N-CH 650V 36A 22-Pin HDSOP EP T/R Automotive AEC-Q101
|
Bestand
660
Von 2,462 € bis 2,6716 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Ten Source Eleven Drain | Enhancement | 1 | 650 | 20 | 223000 | 36 | 80@10V | 50@10V | 50 | 2513@400V | 22 | HDSOP EP | SO | Yes | AEC-Q101 | Yes | Yes | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FF2MR12W3M1HB11BPSA1
Trans MOSFET N-CH SiC 1.2KV 400A 58-Pin Tray
|
438,5573 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Quad | Enhancement | 4 | 1200 | 20 | 400 | 2.27@18V | 1600@18V | 48400@800V | Tray | 58 | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP140NPBF
Trans MOSFET N-CH 100V 33A 3-Pin(3+Tab) TO-247AC Tube
|
Bestand
16.600
Von 0,6987 € bis 0,9779 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 100 | ±20 | 40 | 4 | 140000 | 33 | 52@10V | 94(Max)@10V | 1.1 | 94(Max) | 330 | 1400@25V | HEXFET | Tube | 3 | TO-247AC | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes |