NXP Semiconductors Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Regulator Current - (mA) | Maximum Gate Trigger Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Mode of Operation | Minimum Tuning Ratio | Maximum Voltage Regulation - (mV) | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MRF6S18060NR1
Trans RF FET N-CH 68V 5-Pin TO-270 W T/R
|
|
NXP Semiconductors | HF-MOSFETs | N | Single Dual Drain Dual Gate | Enhancement | 1 | GSM|GSM EDGE | 68 | 12 | 216000 | 1800 | 60(Typ) | 15|15.5 | Tape and Reel | 5 | TO-270 W | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFE6VS25NR1
Trans RF MOSFET N-CH 133V 3-Pin TO-270 T/R
|
34,1332 €
pro Stück
|
NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 2-Tone|Pulse|CW | 133 | 10 | 2.5 | 39.2@50V | 1.8 | 25(Typ) | 25.4 | Tape and Reel | 3 | TO-270 | TO | No | Yes | No | No | No | No | 5A991g. | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
AFT09MP055NR1
Trans RF MOSFET N-CH 40V 5-Pin TO-270 W T/R
|
Von 26,082 € bis 28,1317 €
pro Stück
|
NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | CW | 40 | 12 | 2.6 | 625000 | 690@12.5V | 764 | 57(Typ) | 17.5(Max) | Tape and Reel | 5 | TO-270 W | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFU730LXZ
Trans RF BJT NPN 3V 0.03A 160mW 3-Pin DFN_C T/R
|
|
NXP Semiconductors | HF-BJT | NPN | SiGe | Single | 3 | 1 | 10 | 1.3 | 0.03 | 200 to 300 | 205@2mA@2V | 0.31 | 160 | 0.084 | 11.7(Typ) | 24.5 | 25.5 | 53000(Typ) | 0.75(Typ) | Tape and Reel | 3 | DFN_C | DFN | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF7S24250NR3
Trans RF MOSFET N-CH 65V Medical 3-Pin OM-780 EP T/R
|
|
NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | CW | 65 | 10 | 1.2(Typ) | 769 | 2400 | 319 | 14.7 | Tape and Reel | 3 | OM-780 EP | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRFE6S9060GNR1 Trans RF MOSFET N-CH 66V 3-Pin TO-270 T/R |
Von 45,9973 € bis 55,2906 €
pro Stück
|
NXP Semiconductors | HF-MOSFETs | MOSFET | N | Single | Enhancement | 1 | 1-Carrier N-CDMA|CW|GSM EDGE | 66 | 12 | 109@28V | 470 | 14(Typ) | 20|21.1 | Tape and Reel | 3 | TO-270 | TO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFT26H250-24SR6 Trans RF MOSFET N-CH 65V 7-Pin NI-1230 T/R |
|
NXP Semiconductors | HF-MOSFETs | N | Enhancement | 1-Carrier W-CDMA | 65 | 10 | 1.6 | 2496 | 50(Typ) | 14.1 | Tape and Reel | 7 | NI-1230 | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFU520XVL
Trans RF BJT NPN 16V 0.05A 450mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-143B T/R
|
|
NXP Semiconductors | HF-BJT | NPN | Si | Single Dual Emitter | 16 | 1 | 30 | 3 | 0.05 | 8V/10mA | 50 to 120 | 60@5mA@8V | 0.74 | 450 | 0.52 | 9.5(Typ) | 26 | 19.5 | 10500(Typ) | 1.1(Min) | Tape and Reel | 4 | SOT-143B | SOT | No | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8P20160HR3
Trans RF MOSFET N-CH 65V 5-Pin Case 465M-01 T/R
|
|
NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | 1-Carrier W-CDMA | 65 | 10 | 1880 | 37(Typ) | 16.5 | Tape and Reel | 5 | Case 465M-01 | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFE6S9135HR3
Trans RF FET N-CH 66V 3-Pin NI-780S T/R
|
|
NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 66 | 12 | 343@28V | 180 | 21 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1N4148,133
Diode Switching 100V 0.2A 2-Pin ALF Ammo
|
|
NXP Semiconductors | Gleichrichter | Switching Diode | Single | 100 | 0.2 | 4 | 1@0.01A | 0.025@20V | 4 | 500 | Ammo | 2 | ALF | DO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2T18H160-24SR3 High Reliability RF FET IC |
|
NXP Semiconductors | HF-MOSFETs | 1805 | Tape and Reel | 7 | CFMF | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MW6S010GNR1
Trans RF MOSFET N-CH 68V 3-Pin TO-270 GULL T/R
|
Von 21,6872 € bis 22,7555 €
pro Stück
|
NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 2-Tone | 68 | 12 | 61400 | 23@28V | 450 | 10(Typ) | 20 | Tape and Reel | 3 | TO-270 GULL | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAV99/8,215
Diode Switching 100V 0.215A 3-Pin SOT-23 T/R
|
|
NXP Semiconductors | Gleichrichter | Switching Diode | Dual Series | 100 | 0.215 | 4 | 1.25@0.15A | 0.5@80V | 1.5 | 4 | 500K/W | 250 | 3 | SOT-23 | SOT | Unknown | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFT27S010NT1
Trans RF MOSFET N-CH 65V 3-Pin PLD-1.5W T/R
|
|
NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 65 | 10 | 1.6 | 728 | 1.26(Typ) | 21.7 | Tape and Reel | 3 | PLD-1.5W | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PBLS4001V,115
Trans Digital BJT NPN/PNP 50V 0.1A/0.5A 300mW 6-Pin SOT-666 T/R Automotive AEC-Q101
|
|
NXP Semiconductors | Digital-BJT | NPN|PNP | Dual | 50@NPN|40@PNP | 2.2 | 1.2@50mA@500mA | 1 | 0.5@PNP|0.1@NPN | 30@20mA@5V@NPN|40@500mA@2V|150@100mA@2V|200@10mA@2V@PNP | 300 | 0.35@50mA@500mA@PNP|0.15@0.5mA@10mA@NPN | Tape and Reel | 6 | SOT-666 | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MHE1003NR3
Trans RF MOSFET N-CH 65V 3-Pin OM-780 EP T/R
|
|
NXP Semiconductors | HF-MOSFETs | MOSFET | N | Enhancement | CW | 65 | 10 | 833000 | 2400 | 220(Typ) | 14.1 | Tape and Reel | 3 | OM-780 EP | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFX1K80H-88MHZ
Trans RF MOSFET N-CH 179V 5-Pin CFMF
|
1.641,5217 €
pro Stück
|
NXP Semiconductors | HF-MOSFETs | N | Enhancement | Pulse | 179 | 10 | 2.9 | 2247000 | 760@65V | 1.8 | 1800(Typ) | 25.1 | 5 | CFMF | No | No | No | No | 3B992 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PSMN3R7-30YLC,115
Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R
|
|
NXP Semiconductors | MOSFETs | Power MOSFET | N | Single Triple Source | Enhancement | 1 | 30 | 20 | 1.95 | 100 | 3.95@10V | 14@4.5V|27@10V|29@10V | 27|29 | 79000 | 1848@15V | Tape and Reel | 5 | LFPAK | FPAK | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Z0103NA0,116
TRIAC 800V 13.8A 3-Pin TO-92
|
|
NXP Semiconductors | TRIACs | 50 | 80(Min) | 0.5 | 1 | 5 | 7 | 800 | 1.6@1A | 800 | 3 | TO-92 | No | Unknown | Unknown | Unknown | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PSMN7R0-100XS,127
Trans MOSFET N-CH 100V 55A 3-Pin(3+Tab) TO-220F Rail
|
|
NXP Semiconductors | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 100 | 20 | 55 | 6.8@10V | 121@10V | 121 | 57700 | 6686@50V | Rail | 3 | TO-220F | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMN45EN,135
Trans MOSFET N-CH 30V 5.2A 6-Pin TSOP T/R
|
|
NXP Semiconductors | MOSFETs | Power MOSFET | N | Single Quad Drain | Enhancement | 1 | 30 | 20 | 5.2 | 40@10V | 6.1@4.5V | 1750 | 495@25V | Tape and Reel | 6 | TSOP | SO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF909AWR,115
Trans RF MOSFET N-CH 7V 0.04A 4-Pin(3+Tab) CMPAK T/R
|
|
NXP Semiconductors | HF-MOSFETs | N | Dual | Enhancement | 2 | 7 | 6 | 0.04 | 280 | 2.8 | Tape and Reel | 4 | CMPAK | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BTA201-800E,112
TRIAC 800V 13.7A 3-Pin SPT Bulk
|
|
NXP Semiconductors | TRIACs | 100 | 600(Min) | 0.5 | 1 | 10 | 12 | 800 | 1.5@1.4A | 800 | Bulk | 3 | SPT | No | Unknown | Unknown | Unknown | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLC8G27LS-245AVJ TRANS RF 240W 65V LDMOS SOT1251 |
|
NXP Semiconductors | HF-MOSFETs | 7 | DFM | No | Unknown | No | No | No | No | No |