NXP Semiconductors Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Regulator Current - (mA) | Maximum Gate Trigger Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Mode of Operation | Minimum Tuning Ratio | Maximum Voltage Regulation - (mV) | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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| NXPSC20650WQ Diode 650V 20A 3-Pin(3+Tab) TO-247 |
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NXP Semiconductors | Gleichrichter | 3 | TO-247 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAP55LX,315
PIN Diode Attenuator/Switch 50V 100mA Automotive AEC-Q101 2-Pin SOD T/R
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Von 0,1015 € bis 0,105 €
pro Stück
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NXP Semiconductors | PIN | Attenuator|Switch | SHF | Single | 50 | 100 | 0.8@100mA | 1.1@50mA | 4.5@0.5mA | 0.1 | 0.28@20V | 0.27 | 135 | 2 | SOD | SOD | No | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMEG2010AEB/DG,115
Diode Schottky 1A 2-Pin SC-79 T/R
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NXP Semiconductors | Gleichrichter | 2 | SC-79 | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PBLS4005V,115
Trans Digital BJT NPN/PNP 50V 0.1A/0.5A 300mW 6-Pin SOT-666 T/R Automotive AEC-Q101
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NXP Semiconductors | Digital-BJT | NPN|PNP | Dual | 50@NPN|40@PNP | 47@NPN | 1.2@50mA@500mA@PNP | 1@NPN | 0.1@NPN|0.5@PNP | 80@5mA@5V@NPN|40@500mA@2V|150@100mA@2V|200@10mA@2V@PNP | 300 | 0.15@0.5mA@10mA@NPN|0.05@0.5mA@10mA|0.13@5mA@100mA|0.2@10mA@200mA|0.35@50mA@500mA@PNP | Tape and Reel | 6 | SOT-666 | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PVR100AD-B2V5,115
Integrated Zener Diode and NPN Bipolar Transistor 6-Pin TSOP T/R
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NXP Semiconductors | Diskrete, Verschiedenes | 6 | TSOP | SO | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF101AN-230MHZ
Trans RF MOSFET N-CH 133V 3-Pin(3+Tab) TO-220
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Von 1.212,7827 € bis 1.457,6701 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Single | Enhancement | 1 | CW | 133 | 10 | 2.7 | 182000 | 149@50V | 1.8 | 115(Typ) | 21.1 | 3 | TO-220 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BT131-800D,112
TRIAC 800V 13.7A 3-Pin TO-92 Bulk
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NXP Semiconductors | TRIACs | 0.5 | 1 | 7 | 10 | 800 | 1.5@1.4A | 800 | Bulk | 3 | TO-92 | No | Unknown | Unknown | Unknown | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PSMN3R2-25YLC,115
Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R
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NXP Semiconductors | MOSFETs | Power MOSFET | N | Single Triple Source | Enhancement | 1 | 25 | 20 | 100 | 3.4@10V | 30@10V|14@4.5V|26@10V | 26|30 | 79000 | 1781@12V | Tape and Reel | 5 | LFPAK | FPAK | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8S18120HSR3
Trans RF MOSFET N-CH 65V 3-Pin NI-780S T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | GSM|GSM EDGE | 65 | 10 | 1805 | 72(Typ) | 18.2 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | 5A991g. | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BTA312-600B/DG,127
TRIAC 600V 12A(RMS) 110A 3-Pin(3+Tab) TO-220AB Rail
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NXP Semiconductors | TRIACs | 100 | 2000(Typ) | 0.5 | 1 | 50 | 60 | 600 | 1.6@15A | 600 | 12 | Rail | 3 | TO-220AB | TO | No | Unknown | Unknown | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BT169B,126
SCR Diode 200V 0.8A(RMS) 9A 3-Pin SPT Ammo
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NXP Semiconductors | Silicon Controlled Rectifiers - SCRs | 50 | 800(Typ) | 0.1 | 0.8 | 0.2 | 5 | 200 | 5 | 1.7@1.2A | 200 | 0.5 | 0.8 | Ammo | 3 | SPT | No | Unknown | No | Unknown | Unknown | Unknown | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF1216,115
Trans RF MOSFET N-CH 6V 0.03A 6-Pin TSSOP T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual | Enhancement | 2 | 6 | 1 | 0.03 | 180 | 2.5@5V@Gate 1|2.4@5V@Gate 2 | 34 | 5 | Tape and Reel | 6 | TSSOP | SO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BF1102,115
Trans RF MOSFET N-CH 7V 0.04A 6-Pin TSSOP T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual | Enhancement | 2 | 7 | 6 | 0.04 | 200 | 2.8@5V@Gate 1|7(Max)@5V@Gate 2 | 2.8 | Tape and Reel | 6 | TSSOP | SO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFR94A,215
Trans RF BJT NPN 15V 0.025A 300mW Automotive AEC-Q101 3-Pin TO-236AB T/R
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NXP Semiconductors | HF-BJT | NPN | Single | 15 | 1 | 20 | 2 | 0.025 | 50 to 120 | 65@15mA@10V | 300 | 5000(Typ) | 3(Typ) | Tape and Reel | 3 | TO-236AB | TO | No | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BB179LX,315
Varactor Diode Single 30V 18.2pF 2-Pin SOD T/R
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NXP Semiconductors | Varaktors | Tuner|VCO | UHF | Single | 30 | 0.01 | 8.45 | 1V/28V | 18.2@1V | Tape and Reel | 2 | SOD | SOD | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAW62,113
Diode Switching 75V 0.25A 2-Pin ALF T/R
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NXP Semiconductors | Gleichrichter | Switching Diode | Single | 75 | 0.25 | 4 | 1@0.1A | 5 | 4 | 350 | Tape and Reel | 2 | ALF | DO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF13750H-915MHZ
Trans RF MOSFET N-CH 105V 5-Pin NI-1230H
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1.091,7774 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Enhancement | CW | 105 | 10 | 2.3 | 1333000 | 700 | 850(Typ) | 20.5 | 5 | NI-1230H | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFG35002N6T1
High Reliability RF FET IC
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NXP Semiconductors | HF-MOSFETs | Tape and Reel | 4 | PLD-1.5 | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF909WR,115
Trans RF MOSFET N-CH 7V 0.04A 4-Pin(3+Tab) CMPAK T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual | Enhancement | 2 | 7 | 6 | 0.04 | 280 | 3.6@5V@Gate 1|2.3@5V@Gate 2 | 2.8 | Tape and Reel | 4 | CMPAK | SOT | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ACT102H-600D,118
TRIAC 600V 8.8A 8-Pin SO T/R
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NXP Semiconductors | TRIACs | 50 | 300(Min) | 0.002 | 0.9 | 5 | 20 | 600 | 1.2@0.3A | 600 | Tape and Reel | 8 | SO | No | Unknown | Unknown | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BT151-500C,127
Thyristor SCR 500V 110A 3-Pin(3+Tab) TO-220AB Rail
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NXP Semiconductors | Silicon Controlled Rectifiers - SCRs | 50 | 1000(Typ) | 0.5 | 1.5 | 15 | 20 | 500 | 5 | 1.75@23A | 500 | 7.5 | Tube | 3 | TO-220AB | TO | No | Unknown | Unknown | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMRF5014H-500MHZ Trans RF MOSFET N-CH 125V 3-Pin NI-360H-2SB Each |
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NXP Semiconductors | HF-MOSFETs | MOSFET | GaN | N | Single | Enhancement | 1 | Pulse | 125 | 0 | 2.3 | 232000 | 51@50V | 1 | 125(Typ) | 18 | Each | 3 | NI-360H-2SB | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFU520WX
Trans RF BJT NPN 16V 0.05A 450mW Automotive 3-Pin SC-70 T/R
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Von 0,1093 € bis 0,1209 €
pro Stück
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NXP Semiconductors | HF-BJT | NPN | Si | Single | 16 | 1 | 30 | 3 | 0.05 | 8V/10mA | 50 to 120 | 60@5mA@8V | 0.64 | 450 | 0.55 | 8.5(Typ) | 24 | 18 | 10000(Typ) | 1(Min) | Tape and Reel | 3 | SC-70 | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PHN203,518
Trans MOSFET N-CH 30V 6.3A 8-Pin SO T/R
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NXP Semiconductors | MOSFETs | Power MOSFET | N | Dual Dual Drain | Enhancement | 2 | 30 | ±20 | 6.3 | 30@10V | 14.6@10V | 14.6 | 2000 | 560@20V | Tape and Reel | 8 | SO | SO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFU910FX
Trans RF BJT NPN 9.5V 0.015A 300mW 4-Pin DFP T/R
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NXP Semiconductors | HF-BJT | NPN | SiGe | Single Dual Emitter | 9.5 | 1 | 9.5 | 1.5 | 0.015 | 2V | 500 to 3600 | 1200@1.5mA@1.5V | 0.3 | 300 | 0.035 | 2(Typ) | 15.5(Max) | 12.5 | 90000(Typ) | 0.85(Min) | Tape and Reel | 4 | DFP | No | No | No | No | No | EAR99 | Yes | No |