NXP Semiconductors Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Regulator Current - (mA) | Maximum Gate Trigger Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Mode of Operation | Minimum Tuning Ratio | Maximum Voltage Regulation - (mV) | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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BUK7506-75B,127
Trans MOSFET N-CH 75V 159A 3-Pin(3+Tab) TO-220AB Rail Automotive AEC-Q101
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NXP Semiconductors | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 75 | 20 | 159 | 5.6@10V | 91@10V | 91 | 300000 | 5585@25V | TrenchFET | Rail | 3 | TO-220AB | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAP142LX,315
PIN Diode Attenuator/Switch 50V 100mA 2-Pin SOD T/R
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NXP Semiconductors | PIN | Attenuator|Switch | SHF | Single | 50 | 100 | 1.3@100mA | 1.1@50mA | 5@0.5mA | 0.1 | 0.26@20V | 0.11 | 130 | 2 | SOD | SOD | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF6VP41KHR5
Trans RF MOSFET N-CH 110V 5-Pin NI-1230 T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | CW | 110 | 10 | 1333000 | 506@50V | 10 | 1000(Typ) | 20.1 | Tape and Reel | 5 | NI-1230 | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BT300S-600R,118
Thyristor SCR 600V 71A 3-Pin(2+Tab) DPAK T/R
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NXP Semiconductors | Silicon Controlled Rectifiers - SCRs | 50 | 1000(Typ) | 0.5 | 1.5 | 15 | 20 | 600 | 5 | 1.6@12A | 600 | 5 | Tape and Reel | 3 | DPAK | TO | No | Unknown | Unknown | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAP65-05,215
Diode PIN Attenuator/Switch 30V 3-Pin TO-236AB T/R Automotive AEC-Q101
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NXP Semiconductors | PIN | Dual Common Cathode | 30 | 100 | 0.9 | 250 | 3 | TO-236AB | TO | No | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BUK952R8-60E,127
Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220AB Rail Automotive AEC-Q101
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NXP Semiconductors | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 60 | 10 | 120 | 2.6@10V | 120@5V | 349000 | 13070@25V | Rail | 3 | TO-220AB | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| OM12001/1020000:55 N-channel TrenchMOS logic level FET |
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NXP Semiconductors | MOSFETs | No | Unknown | No | No | No | No | 5A002.a.1 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAP51-05W,115
Diode PIN Switch 50V 50mA 3-Pin SC-70 T/R Automotive AEC-Q101
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NXP Semiconductors | PIN | Switch | Dual Common Cathode | 50 | 50 | 2.5@10mA | 1.1 | 9@0.5mA | 0.35@5V | 0.55 | 240 | 3 | SC-70 | SOT | No | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF6S19060NR1
Trans RF FET N-CH 68V 5-Pin TO-270 W T/R
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NXP Semiconductors | HF-MOSFETs | N | Single Dual Drain Dual Gate | Enhancement | 1 | 2-Carrier N-CDMA | 68 | 12 | 1930 | 60 | 16 | Tape and Reel | 5 | TO-270 W | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8P8300HSR6
Trans RF MOSFET N-CH 70V 5-Pin NI-1230S T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | 1-Carrier W-CDMA | 70 | 10 | 790 | 96(Typ) | 20.9 | Tape and Reel | 5 | NI-1230S | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BAP63-05W,115
Diode PIN Attenuator/Switch 50V 100mA 3-Pin SC-70 T/R Automotive AEC-Q101
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NXP Semiconductors | PIN | Attenuator|Switch | SHF | Dual Common Cathode | 50 | 100 | 1.5@100mA | 1.1@50mA | 3.5@0.5mA | 0.35@20V | 0.31 | 240 | 3 | SC-70 | SOT | No | No | Yes | AEC-Q101 | Yes | Yes | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RX1214B300YI,112 High Reliability RF BJT IC |
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NXP Semiconductors | HF-BJT | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BUK752R7-60E,127
Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220AB Rail Automotive AEC-Q101
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NXP Semiconductors | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 60 | 20 | 120 | 2.6@10V | 158@10V | 158 | 349000 | 9380@25V | Rail | 3 | TO-220AB | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BTA316-800B,127
TRIAC 800V 150A 3-Pin(3+Tab) TO-220AB Rail
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NXP Semiconductors | TRIACs | 0.5 | 1 | 50 | 60 | 800 | 1.5@18A | 800 | Rail | 3 | TO-220AB | TO | No | No | No | No | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BYD37D,115
Diode Switching 200V 1.5A 2-Pin MELF T/R
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NXP Semiconductors | Gleichrichter | Switching Diode | Single | 200 | 1.5 | 20 | 1.3@1A | 1 | 20(Typ) | 250 | 2 | MELF | MELF | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF101AN-81MHZ
Trans RF MOSFET N-CH 133V 3-Pin(3+Tab) TO-220
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Von 909,6963 € bis 1.093,3791 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Single | Enhancement | 1 | CW | 133 | 10 | 2.7 | 182000 | 149@50V | 1.8 | 115(Typ) | 21.1 | 3 | TO-220 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BB171X
Diode VAR Cap Single 35V 52pF 2-Pin SOD-323 T/R
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NXP Semiconductors | Varaktors | VCO | VHF | Single | 35 | 0.01 | 0.02 | 20.6 | 1V/28V | 52@1V | Tape and Reel | 2 | SOD-323 | SOD | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMN40LN,135
Trans MOSFET N-CH 30V 5.4A 6-Pin TSOP T/R
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NXP Semiconductors | MOSFETs | Power MOSFET | N | Single Quad Drain | Enhancement | 1 | 30 | ±15 | 5.4 | 38@10V | 13.8@10V | 13.8 | 1750 | 555@25V | Tape and Reel | 6 | TSOP | SO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAV20,113
Diode Switching 200V 0.25A 2-Pin ALF T/R
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NXP Semiconductors | Gleichrichter | Switching Diode | Single | 200 | 0.25 | 9 | 1.25@0.2A | 0.1 | 5 | 50 | 375K/W | 400 | Tape and Reel | 2 | ALF | DO | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BA277,115
Diode PIN Switch 35V 100mA 2-Pin SOD-523 T/R
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NXP Semiconductors | PIN | Switch | VHF | Single | 35 | 100 | 0.7@2mA | 1@10mA | 1.2@6V | 715 | Tape and Reel | 2 | SOD-523 | SOD | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BB149A,115
Diode VAR Cap Single 35V 18.22pF 2-Pin SOD-323 T/R
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NXP Semiconductors | Varaktors | Tuner|VCO | UHF | Single | 35 | 0.01 | 0.02 | 8.45 | 1V/28V | 18.22@1V | Tape and Reel | 2 | SOD-323 | SOD | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF904,215
Trans RF FET N-CH 7V 0.03A 4-Pin(3+Tab) SOT-143B T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual | Enhancement | 2 | 7 | 6 | 0.03 | 200 | 2.2@5V@Gate 1|1.5@5V@Gate 2 | 2.8 | Tape and Reel | 4 | SOT-143B | SOT | No | Unknown | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMN38EN,135
Trans MOSFET N-CH 30V 5.4A 6-Pin TSOP T/R
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NXP Semiconductors | MOSFETs | Power MOSFET | N | Single Quad Drain | Enhancement | 1 | 30 | ±20 | 5.4 | 38@10V | 6.1@4.5V | 1750 | 495@25V | Tape and Reel | 6 | TSOP | SO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFV121KH-960MHZ
Trans RF MOSFET N-CH 112V 5-Pin NI-1230H
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Von 1.212,9255 € bis 1.457,8417 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Dual Common Source | Enhancement | 2 | Pulse | 112 | 10 | 2.3 | 960 | 1410(Typ) | 19.6 | 5 | NI-1230H | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMD9002D,115
Trans Digital BJT NPN 50V 0.1A 400mW 6-Pin TSOP T/R
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NXP Semiconductors | Digital-BJT | NPN | Single | 50 | 4.7 | 1 | 0.1 | 30@20mA@5V | 400 | 0.15@0.5mA@10mA | Tape and Reel | 6 | TSOP | SO | No | No | No | No | EAR99 |