NXP Semiconductors Dioden, Transistoren und Thyristoren
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Regulator Current - (mA) | Maximum Gate Trigger Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Mode of Operation | Minimum Tuning Ratio | Maximum Voltage Regulation - (mV) | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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BAS516,115
Diode Switching 100V 0.25A 2-Pin SC-79 T/R
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NXP Semiconductors | Gleichrichter | Switching Diode | Single | 100 | 0.25 | 4 | 1.25@0.15A | 0.5@80V | 1 | 4 | 500 | Tape and Reel | 2 | SC-79 | SOD | No | Yes | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MHT1008NT1
RF Power LDMOS Transistor for Consumer and Commercial
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NXP Semiconductors | HF-MOSFETs | CW | 2450 | 18.6 | Tape and Reel | 3 | PLD-1.5W | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PBSS305ND,115
Trans GP BJT NPN 100V 3A 2500mW 6-Pin TSOP T/R Automotive AEC-Q101
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NXP Semiconductors | GP BJT | NPN | Bipolar Small Signal | Single Quad Collector | 100 | 1 | 100 | 5 | 0.87@50mA@0.5A|0.89@50mA@1A|0.92@100mA@1A|0.99@150mA@3A|1.02@300mA@3A | 3 | 2 to 30|30 to 50|50 to 120|120 to 200 | 170@0.5A@2V|125@1A@2V|70@2A@2V|40@3A@2V|25@4A@2V | 350 | 2500 | 0.06@50mA@0.5A|0.12@50mA@1A|0.19@200mA@2A|0.31@150mA@3A|0.28@300mA@3A|0.36@400mA@4A | 355(Typ) | Tape and Reel | 6 | TSOP | SO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BTA204S-600B,118
TRIAC 600V 27A 3-Pin(2+Tab) DPAK T/R
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NXP Semiconductors | TRIACs | 100 | 1000(Min) | 0.5 | 1.5 | 50 | 30 | 600 | 1.7@5A | 600 | Tape and Reel | 3 | DPAK | TO | No | Unknown | Unknown | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF6S21140HR3
Trans RF FET N-CH 68V 3-Pin NI-880 T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 2-Carrier W-CDMA|CDMA|TDMA | 68 | 12 | 2110 | 140 | 15.5 | Tape and Reel | 3 | NI-880 | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFT09MS031NR1
Trans RF MOSFET N-CH 40V 3-Pin TO-270 T/R
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Von 10,2728 € bis 11,1331 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Single | Enhancement | 1 | CW | 40 | 12 | 2.6 | 317000 | 140@13.6V | 764 | 31(Typ) | 17.2 | Tape and Reel | 3 | TO-270 | TO | No | Yes | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2T23H160-24SR3 High Reliability RF FET IC |
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NXP Semiconductors | HF-MOSFETs | 2300 | 28 | 17.7 | Tape and Reel | 7 | CFMF | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMRF1317HSR5
Trans RF MOSFET N-CH 105V 5-Pin NI-1230S T/R
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1.024,9611 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | Pulse | 105 | 10 | 2.3 | 869000 | 1020 | 1300(Typ) | 18.2 | Tape and Reel | 5 | NI-1230S | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MAC223A8X,127
TRIAC 600V 230A 3-Pin(3+Tab) TO-220F Rail
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NXP Semiconductors | TRIACs | 50 | 300(Typ) | 0.5 | 1 | 75 | 30 | 600 | 1.55@30A | 600 | Rail | 3 | TO-220F | No | Unknown | Unknown | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZV85-C5V6,133
Diode Zener Single 5.6V 5% 1300mW 2-Pin DO-41 Ammo
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NXP Semiconductors | Zener | Voltage Regulator | Single | 5.6 | 5% | 45 | 1 | 2 | 7 | 1300 | 300 | 1300 | Ammo | 2 | DO-41 | DO | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AFT21S140W02SR3
Trans RF MOSFET N-CH 65V 3-Pin NI-780S T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 65 | 10 | 1.6 | 2110 | 32(Typ) | 19.3 | Tape and Reel | 3 | NI-780S | No | No | No | No | 5A991g. | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF1109WR,115
Trans RF MOSFET N-CH 11V 0.03A 4-Pin(3+Tab) CMPAK T/R
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NXP Semiconductors | HF-MOSFETs | N | Single Dual Gate | Enhancement | 1 | 11 | 11 | 0.03 | 200 | 2.2@9V@Gate 1|1.5@9V@Gate 2 | 38 | 2.5 | Tape and Reel | 4 | CMPAK | SOT | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BLF6G27-75,112
Trans RF MOSFET N-CH 65V 18A 3-Pin SOT-502A Bulk
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier N-CDMA | 65 | 13 | 18 | 250@6.15V | 2500 | 75(Typ) | 17 | Bulk | 3 | SOT-502A | SOT | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF1K50H-TF2 Trans RF MOSFET N-CH 135V 5-Pin NI-1230H |
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Enhancement | Pulse | 135 | 10 | 1667000 | 664@50V | 1.8 | 1500(Typ) | 23.7 | 5 | NI-1230H | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMRF1004GNR1
Trans RF MOSFET N-CH 68V 3-Pin TO-270 GULL T/R
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Von 25,0081 € bis 26,0965 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier N-CDMA|2-Carrier W-CDMA|2-Tone|GSM EDGE | 68 | 12 | 3.5 | 120@28V | 1600 | 10(Typ) | 15.5|16 | Tape and Reel | 3 | TO-270 GULL | TO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MRFE6VP5600HSR5
Trans RF MOSFET N-CH 130V 5-Pin NI-1230S T/R
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209,4462 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | CW | 130 | 10 | 1667000 | 342@50V | 1.8 | 600(Typ) | 25 | Tape and Reel | 5 | NI-1230S | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PVR100AD-B3V3,115
Integrated Zener Diode and NPN Bipolar Transistor 6-Pin TSOP T/R
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NXP Semiconductors | Diskrete, Verschiedenes | Integrated Zener Diode and NPN Bipolar Transistor | 6 | TSOP | SO | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF6V13250HR5
Trans RF MOSFET N-CH 120V 3-Pin NI-780 T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | CW|Pulsed RF | 120 | 10 | 2.7 | 476000 | 340@50V | 960 | 250(Typ) | 20|22.7 | Tape and Reel | 3 | NI-780 | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAW56,215
Diode Switching 90V 0.215A 3-Pin SOT-23 T/R
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NXP Semiconductors | Gleichrichter | Switching Diode | Dual Common Anode | 90 | 0.215 | 4 | 1.25@0.15A | 0.5@80V | 2 | 4 | 500K/W | 250 | Tape and Reel | 3 | SOT-23 | SOT | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFG67,215
Trans RF BJT NPN 10V 0.05A 380mW 4-Pin(3+Tab) SOT-143B T/R
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NXP Semiconductors | HF-BJT | NPN | Si | Single Dual Emitter | 10 | 1 | 20 | 2.5 | 0.05 | 8V/15mA | 50 to 120 | 60@15mA@5V | 380 | 17 | 8000(Typ) | 3(Typ) | Tape and Reel | 4 | SOT-143B | SOT | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFT23H200-4S2LR6 Trans RF MOSFET N-CH 65V 7-Pin NI-1230 T/R |
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | 1-Carrier W-CDMA | 65 | 10 | 1.6 | 2300 | 45(Typ) | 15.3 | Tape and Reel | 7 | NI-1230 | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BT151X-650R,127
Thyristor SCR 650V 132A 3-Pin(3+Tab) TO-220F Rail
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NXP Semiconductors | Silicon Controlled Rectifiers - SCRs | 0.5 | 1.5 | 15 | 20 | 650 | 5 | 1.75@23A | 650 | 7.5 | Rail | 3 | TO-220F | No | Unknown | Unknown | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFX600GSR5
Trans RF MOSFET N-CH 179V 5-Pin NI-780GS T/R
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Dual Common Source | Enhancement | 2 | Pulsed CW | 179 | 10 | 1333000 | 299@65V | 1.8 | 680(Typ) | 26.4 | Tape and Reel | 5 | NI-780GS | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZX79-C24,113
Diode Zener Single 24V 5% 500mW 2-Pin ALF T/R
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NXP Semiconductors | Zener | Voltage Regulator | Single | 24 | 5% | 5 | 0.9 | 0.05 | 70 | 55 | 500 | Tape and Reel | 2 | ALF | DO | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF6S23100HSR3
Trans RF MOSFET N-CH 68V 3-Pin NI-780S T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 2-Carrier W-CDMA|CDMA|WIBRO|WIMAX | 68 | 12 | 2300 | 100 | 15.4 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | EAR99 | No | No |