NXP Semiconductors Dioden, Transistoren und Thyristoren
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Voltage Regulation - (mV) | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Regulator Current - (mA) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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AFT09MP055GNR1
Trans RF MOSFET N-CH 40V 5-Pin TO-270 W GULL T/R
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Von 26,327 € bis 28,4016 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | CW | 40 | 12 | 2.6 | 625000 | 690@12.5V | 17.5(Max) | 764 | 57(Typ) | 941 | Tape and Reel | 5 | TO-270 W GULL | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A3T23H450W23SR6 RF Power LDMOS Transistor |
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NXP Semiconductors | HF-MOSFETs | 2300 | 2400 | Tape and Reel | 7 | ACP-1230S-4L2S | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2V07H525-04NR6 POWER LDMOS TRANSISTOR 400-2700 MHz, 2.5 W AVG., 28 V |
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NXP Semiconductors | HF-MOSFETs | 595 | 851 | Tape and Reel | 5 | Case OM-1230 L | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFE6VS25GNR1
Trans RF MOSFET N-CH 133V 3-Pin TO-270 GULL T/R
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35,9707 €
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 2-Tone|Pulse|CW | 133 | 10 | 2.5 | 39.2@50V | 25.4 | 1.8 | 25(Typ) | 2000 | Tape and Reel | 3 | TO-270 GULL | TO | No | No | No | No | No | 5A991g. | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A3G18H500-04SR3 RF Power GaN FET Transistor |
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NXP Semiconductors | HF-MOSFETs | 1805 | 2200 | Tape and Reel | 5 | CFMF | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BT151-500R,127
SCR 500V 12A(RMS) 132A 3-Pin(3+Tab) TO-220AB Rail
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NXP Semiconductors | Silicon Controlled Rectifiers - SCRs | 1000(Typ) | 50 | 1.5 | 500 | 15 | 20 | 1.75@23A | 5 | 12 | 500 | 7.5 | 0.5 | Rail | 3 | TO-220AB | TO | Unknown | No | Unknown | Unknown | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF7S24250NR3
Trans RF MOSFET N-CH 65V Medical 3-Pin OM-780 EP T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | CW | 65 | 10 | 1.2(Typ) | 769 | 14.7 | 2400 | 319 | 2450 | Tape and Reel | 3 | OM-780 EP | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFX1K80NR5
Trans RF MOSFET N-CH 179V 5-Pin Case OM-1230 T/R
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Von 217,005 € bis 221,8052 €
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Enhancement | CW | 179 | 10 | 3333000 | 765@65V | 24.4 | 1.8 | 1800(Typ) | 400 | Tape and Reel | 5 | Case OM-1230 | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF5S9080NBR1
Trans RF MOSFET N-CH 65V 5-Pin TO-272 W T/R
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NXP Semiconductors | HF-MOSFETs | N | Single Dual Drain Dual Gate | Enhancement | 1 | GSM|GSM EDGE | 65 | 15 | 18.5|19 | 869 | 80 | 960 | Tape and Reel | 5 | TO-272 W | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF1K50GNR5
Trans RF MOSFET N-CH 133V 4-Pin Case OM-1230G L T/R
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Enhancement | Pulse | 133 | 10 | 2941000 | 683@50V | 23 | 1.8 | 1500(Typ) | 500 | Tape and Reel | 4 | Case OM-1230G L | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF6S18060NR1
Trans RF FET N-CH 68V 5-Pin TO-270 W T/R
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NXP Semiconductors | HF-MOSFETs | N | Single Dual Drain Dual Gate | Enhancement | 1 | GSM|GSM EDGE | 68 | 12 | 216000 | 15|15.5 | 1800 | 60(Typ) | 2000 | Tape and Reel | 5 | TO-270 W | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFE6VS25NR1
Trans RF MOSFET N-CH 133V 3-Pin TO-270 T/R
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34,1132 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 2-Tone|Pulse|CW | 133 | 10 | 2.5 | 39.2@50V | 25.4 | 1.8 | 25(Typ) | 2000 | Tape and Reel | 3 | TO-270 | TO | No | Yes | No | No | No | No | 5A991g. | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AFT09MP055NR1
Trans RF MOSFET N-CH 40V 5-Pin TO-270 W T/R
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Von 26,0666 € bis 28,1152 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | N | Dual Common Source | Enhancement | 2 | CW | 40 | 12 | 2.6 | 625000 | 690@12.5V | 17.5(Max) | 764 | 57(Typ) | 941 | Tape and Reel | 5 | TO-270 W | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFU730LXZ
Trans RF BJT NPN 3V 0.03A 160mW 3-Pin DFN_C T/R
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NXP Semiconductors | HF-BJT | NPN | SiGe | Single | 3 | 10 | 1 | 1.3 | 0.03 | 160 | 200 to 300 | 205@2mA@2V | 0.084 | 24.5 | 11.7(Typ) | 25.5 | 53000(Typ) | 0.75(Typ) | Tape and Reel | 3 | DFN_C | DFN | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRFE6S9060GNR1 Trans RF MOSFET N-CH 66V 3-Pin TO-270 T/R |
Von 45,9703 € bis 49,5813 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Single | Enhancement | 1 | 1-Carrier N-CDMA|CW|GSM EDGE | 66 | 12 | 109@28V | 20|21.1 | 470 | 14(Typ) | 1000 | Tape and Reel | 3 | TO-270 | TO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NXPSC04650DJ Diode Schottky 650V 4A 3-Pin(2+Tab) DPAK |
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NXP Semiconductors | Gleichrichter | 1.7@4A | 3 | DPAK | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLC8G27LS-245AVJ TRANS RF 240W 65V LDMOS SOT1251 |
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NXP Semiconductors | HF-MOSFETs | 7 | DFM | No | Unknown | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MHE1003NR3
Trans RF MOSFET N-CH 65V 3-Pin OM-780 EP T/R
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Enhancement | CW | 65 | 10 | 833000 | 14.1 | 2400 | 220(Typ) | 2500 | Tape and Reel | 3 | OM-780 EP | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF908R,235
Trans RF FET N-CH 12V 0.04A 4-Pin(3+Tab) SOT-143R T/R
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NXP Semiconductors | HF-MOSFETs | N | Single Dual Gate | Depletion | 1 | 12 | 8 | 200 | 0.04 | 3.1@8V@Gate 1|1.8@8V@Gate 2 | 1000 | 2.5 | Tape and Reel | 4 | SOT-143R | SOT | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Z0103NA0,116
TRIAC 800V 13.8A 3-Pin TO-92
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NXP Semiconductors | TRIACs | 80(Min) | 50 | 1 | 800 | 5 | 7 | 1.6@1A | 800 | 0.5 | 3 | TO-92 | No | Unknown | Unknown | Unknown | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BTA201-800E,112
TRIAC 800V 13.7A 3-Pin SPT Bulk
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NXP Semiconductors | TRIACs | 600(Min) | 100 | 1 | 800 | 10 | 12 | 1.5@1.4A | 800 | 0.5 | Bulk | 3 | SPT | No | Unknown | Unknown | Unknown | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAP1321-03,115
Diode PIN Attenuator/Switch 60V 100mA 2-Pin SOD-323 T/R
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NXP Semiconductors | PIN | Attenuator|Switch | SHF | Single | 60 | 100 | 1.3@100mA | 1.1@50mA | 5@0.5mA | 500 | 0.32@20V | 0.5 | 2 | SOD-323 | SOD | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMPB12UN,115
Trans MOSFET N-CH 20V 7.9A 6-Pin DFN-MD EP T/R
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NXP Semiconductors | MOSFETs | Power MOSFET | N | Single Quad Drain | Enhancement | 1 | 20 | 8 | 1 | 3500 | 7.9 | 18@4.5V | 8.8@4.5V | 886@10V | Tape and Reel | 6 | DFN-MD EP | DFN | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFR92AW,135
Trans RF BJT NPN 15V 0.025A 300mW 3-Pin SC-70 T/R
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NXP Semiconductors | HF-BJT | NPN | Si | Single | 15 | 20 | 1 | 2 | 0.025 | 10V/15mA | 300 | 50 to 120 | 65@15mA@10V | 0.6 | 5000(Typ) | 3(Typ) | Tape and Reel | 3 | SC-70 | SOT | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMN45EN,135
Trans MOSFET N-CH 30V 5.2A 6-Pin TSOP T/R
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NXP Semiconductors | MOSFETs | Power MOSFET | N | Single Quad Drain | Enhancement | 1 | 30 | 20 | 1750 | 5.2 | 40@10V | 6.1@4.5V | 495@25V | Tape and Reel | 6 | TSOP | SO | No | No | No | No | EAR99 | No | No |