Toshiba Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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SSM3J331R,LF(T
Trans MOSFET P-CH Si 20V 4A 3-Pin SOT-23F T/R
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Bestand
27.000
0,0586 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 20 | ±8 | 1 | 4 | 55@4.5V | 10.4@4.5V | 2000 | 630@10V | Tape and Reel | 3 | SOT-23F | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK35A08N1,S4X(S
Trans MOSFET N-CH Si 80V 55A 3-Pin(3+Tab) TO-220SIS Magazine
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Bestand
10
Von 0,4933 € bis 0,6591 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 80 | ±20 | 4 | 55 | 12.2@10V | 25@10V | 25 | 30000 | 1700@40V | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N37FE,LM(T
Trans MOSFET N-CH Si 20V 0.25A 6-Pin ES T/R
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Bestand
9.135
Von 0,0601 € bis 0,0864 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | N | Dual | Enhancement | 2 | 20 | ±10 | 0.25 | 2200@4.5V | 150 | 12@10V | Tape and Reel | 6 | ES | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPC8132,LQ(S
Trans MOSFET P-CH Si 40V 7A 8-Pin SOP T/R
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Bestand
16
1,3476 €
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Toshiba | MOSFETs | Power MOSFET | Si | P | Single Quad Drain Triple Source | Enhancement | 1 | 40 | 20 | 7 | 25@10V | 34@10V | 34 | 1900 | 1580@10V | Tape and Reel | 8 | SOP | SO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRS09(TE85L,Q,M)
Diode Schottky 30V 1.5A 2-Pin S-FLAT T/R
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Bestand
3
0,0834 €
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Toshiba | Gleichrichter | Schottky Diode | Single | 30 | 1.5@Ta=84C | 30 | 0.46 | 50 | 140°C/W | Tape and Reel | 2 | S-FLAT | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K56MFV,L3F(T
Trans MOSFET N-CH Si 20V 0.8A 3-Pin VESM T/R
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Bestand
34.114
Von 0,0447 € bis 0,0497 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 20 | ±8 | 0.8 | 235@4.5V | 1@4.5V | 500 | 55@10V | Tape and Reel | 3 | VESM | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK8R2E06PL,S1X(S
Trans MOSFET N-CH Si 60V 50A 3-Pin(3+Tab) TO-220
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Bestand
130
Von 0,457 € bis 0,7593 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 50 | 8.2@10V | 15@4.5V|28@10V | 81000 | 1990@30V | 3 | TO-220 | TO | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1106,LF(CT
Trans Digital BJT NPN 50V 0.1A 100mW 3-Pin SSM T/R
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Bestand
998
Von 0,028 € bis 0,0872 €
pro Stück
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Toshiba | Digital-BJT | NPN | Single | 50 | 4.7 | 0.1 | 0.1 | 80@10mA@5V | 100 | 0.3@0.25mA@5mA | Tape and Reel | 3 | SSM | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK170V65Z,LQ(S
Trans MOSFET N-CH 650V 18A 5-Pin DFN EP
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Bestand
2.400
Von 1,2526 € bis 2,9284 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | N | Single Triple Source | Enhancement | 1 | 650 | ±30 | 18 | 170@10V | 29@10V | 150000 | 1635@300V | 5 | DFN EP | DFN | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CRH01(T5L,TEMQ)
Diode Switching 200V 1A 2-Pin S-FLAT T/R
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Bestand
1.696
Von 0,0374 € bis 0,1028 €
pro Stück
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Toshiba | Gleichrichter | Switching Diode | Single | 200 | 1 | 15 | 0.98 | 10 | 35 | Tape and Reel | 2 | S-FLAT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TTC013(TE12L,C,ZE)
Trans GP BJT NPN 350V 0.5A 1000mW 4-Pin(3+Tab) PW-Mini T/R
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Bestand
78
Von 0,1244 € bis 0,1581 €
pro Stück
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single Dual Collector | 350 | 1 | 600 | 7 | 1.1@20mA@0.16A | 0.5 | 30 to 50|50 to 120 | 80@1mA@5V|100@50mA@5V|30@0.16A@5V | 1000 | 0.3@20mA@0.16A | Tape and Reel | 4 | PW-Mini | SOT | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPCP8003-H(TE85L,F
Trans MOSFET N-CH Si 100V 2.2A 8-Pin PS T/R
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Bestand
1.160
Von 0,1866 € bis 0,5174 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 100 | ±20 | 2.2 | 180@10V | 4.5@5V|7.5@10V | 7.5 | 1680 | 360@10V | Tape and Reel | 8 | PS | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CTS05S30,L3F(T
Diode Small Signal Schottky Si 30V 0.5A 2-Pin CST T/R
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Bestand
6.741
0,8578 €
pro Stück
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Toshiba | Gleichrichter | Small Signal Schottky Diode | Si | Single | 30 | 0.5 | 2 | 0.47 | 300 | 55(Typ) | Tape and Reel | 2 | CST | SOD | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN11006PL,LQ(S
Trans MOSFET N-CH Si 60V 26A 8-Pin TSON Advance EP
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Bestand
5.545
Von 0,2298 € bis 0,4414 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 60 | ±20 | 26 | 11.4@10V | 17@10V | 1600 | 1250@30V | 8 | TSON Advance EP | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMS14(TE12L,Q,M)
Diode Schottky 60V 2A 2-Pin M-FLAT T/R
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Bestand
39.710
0,1509 €
pro Stück
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Toshiba | Gleichrichter | Schottky Diode | Single | 60 | 2 | 40 | 0.58 | 200 | Tape and Reel | 2 | M-FLAT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK16J55D(F)
Trans MOSFET N-CH Si 550V 16A 3-Pin(3+Tab) TO-3PN
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Bestand
67
Von 1,028 € bis 1,7277 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 550 | ±30 | 16 | 370@10V | 40@10V | 40 | 250000 | 2300@25V | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1425TE85LF
Trans Digital BJT NPN 50V 0.8A 200mW 3-Pin S-Mini T/R
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Bestand
4.840
Von 0,1382 € bis 0,3835 €
pro Stück
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Toshiba | Digital-BJT | NPN | Single | 50 | 0.47 | 0.047 | 0.8 | 90@100mA@1V | 200 | 0.25@1mA@50mA|0.25@2mA@50mA | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CLS10F40,L3F(S) Schottky Barrier Diode |
Bestand
8.550
Von 0,0933 € bis 0,2445 €
pro Stück
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Toshiba | Gleichrichter | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HN1A01F-Y(TE85L,F)
Trans GP BJT PNP 50V 0.15A 300mW 6-Pin SM T/R
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Bestand
1.966
Von 0,1676 € bis 0,3257 €
pro Stück
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Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Dual | 50 | 2 | 50 | 5 | 0.15 | 120 to 200 | 120@2mA@6V | 300 | 0.3@10mA@100mA | Tape and Reel | 6 | SM | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN7R506NH,L1Q(M
Trans MOSFET N-CH Si 60V 53A 8-Pin TSON EP Advance T/R
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Bestand
4.400
Von 0,2911 € bis 0,806 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 60 | ±20 | 53 | 7.5@10V | 22@10V | 22 | 1900 | 1410@30V | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSM3K35AMFV,L3F
Trans MOSFET N-CH Si 20V 0.25A 3-Pin VESM T/R
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Bestand
6.836
Von 0,02 € bis 0,1547 €
pro Stück
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Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 20 | ±10 | 0.25 | 1100@4.5V | 0.62@4.5V | 500 | 18@10V | Tape and Reel | 3 | VESM | SOT | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6K781G,LF(S
Trans MOSFET N-CH Si 12V 7A 6-Pin WCSP-C T/R
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Bestand
1.800
Von 0,1728 € bis 0,4794 €
pro Stück
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Toshiba | MOSFETs | Power MOSFET | Si | N | Single Triple Drain Dual Source | Enhancement | 1 | 12 | ±8 | 1 | 7 | 18@4.5V | 5.4@4.5V | 2900 | 600@6V | Tape and Reel | 6 | WCSP-C | CSP | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TRS8E65F,S1Q(S
Diode Schottky SiC 650V 8A 2-Pin(2+Tab) TO-220-L Tube
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Bestand
49
Von 17,7951 € bis 23,4964 €
pro Stück
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Toshiba | Gleichrichter | Schottky Diode | SiC | Single | 650 | 8 | 69 | 1.6 | 40 | Tube | 2 | TO-220-L | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CMS04(TE12L,Q,M)
Diode Schottky 30V 5A 2-Pin M-FLAT T/R
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Bestand
22.070
Von 0,2368 € bis 0,2405 €
pro Stück
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Toshiba | Gleichrichter | Schottky Diode | Single | 30 | 5 | 70 | 0.37 | 8000 | Tape and Reel | 2 | M-FLAT | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SA2060(TE12L,F)
Trans GP BJT PNP 50V 2A 2500mW 4-Pin(3+Tab) PW-Mini T/R
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Bestand
113
Von 0,2367 € bis 0,4863 €
pro Stück
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Toshiba | GP BJT | PNP | Bipolar Power | Si | Single Dual Collector | 50 | 1 | 50 | 7 | 1.1@0.033A@1A | 2 | 50 to 120|120 to 200|200 to 300 | 200@0.3A@2V|100@1A@2V | 2500 | 0.2@0.033A@1A | Tape and Reel | 4 | PW-Mini | SOT | No | No | No | No | No | EAR99 | No |