Toshiba MOSFETs
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Category | Material | Process Technology | Configuration | Channel Mode | Channel Type | Number of Elements per Chip | Maximum Drain-Source Voltage - (V) | Maximum Gate-Source Voltage - (V) | Maximum Gate Threshold Voltage - (V) | Maximum Continuous Drain Current - (A) | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Typical Gate Charge @ 10V - (nC) | Typical Input Capacitance @ Vds - (pF) | Typical Output Capacitance - (pF) | Maximum Power Dissipation - (mW) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
TPCC8104,L1Q(CM
Trans MOSFET P-CH Si 30V 20A 8-Pin TSON EP Advance T/R
|
Bestand
2.013
|
Toshiba | MOSFETs | Power MOSFET | Si | Single Quad Drain Triple Source | Enhancement | P | 1 | 30 | 20 | 20 | 8.8@10V | 58@10V | 2260@10V | 1900 | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | EAR99 | No | ||||||||||
SSM6K361NU,LF
Trans MOSFET N-CH Si 100V 3.5A 6-Pin UDFN-B EP T/R Automotive AEC-Q101
|
Bestand
6.000
0,1264 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | Si | Single Quad Drain | Enhancement | N | 1 | 100 | ±20 | 2.5 | 3.5 | 69@10V | 3.2@4.5V | 430@15V | 160 | 2500 | 51@10V|65@4.5V | Tape and Reel | 6 | UDFN-B EP | DFN | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||
TW048N65C,S1F
Trans MOSFET N-CH SiC 650V 40A 3-Pin(3+Tab) TO-247
|
Bestand
30
10,2041 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | SiC | Single | Enhancement | N | 1 | 650 | 25 | 40 | 65@18V | 41@18V | 1362@400V | 132000 | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | |||||||||||
TK35A08N1,S4X(S
Trans MOSFET N-CH Si 80V 55A 3-Pin(3+Tab) TO-220SIS Magazine
|
Bestand
10
|
Toshiba | MOSFETs | Power MOSFET | Si | Single | Enhancement | N | 1 | 80 | ±20 | 4 | 55 | 12.2@10V | 25@10V | 25 | 1700@40V | 30000 | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||
TPH5900CNH,L1Q(M
Trans MOSFET N-CH Si 150V 18A 8-Pin SOP Advance T/R
|
Bestand
7.784
|
Toshiba | MOSFETs | Power MOSFET | Si | Single Quad Drain Triple Source | Enhancement | N | 1 | 150 | ±20 | 4 | 18 | 59@10V | 7@10V | 7 | 460@75V | 42000 | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | No | EAR99 | No | |||||||
TPH8R008NH,L1Q(M
Trans MOSFET N-CH Si 80V 63A 8-Pin SOP Advance T/R
|
Bestand
35
|
Toshiba | MOSFETs | Power MOSFET | Si | Single Quad Drain Triple Source | Enhancement | N | 1 | 80 | ±20 | 4 | 63 | 8@10V | 35@10V | 35 | 2300@40V | 2800 | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||
SSM3K36MFV,L3F(T
Trans MOSFET N-CH Si 20V 0.5A 3-Pin VESM T/R
|
Bestand
579
|
Toshiba | MOSFETs | Small Signal | Si | Single | Enhancement | N | 1 | 20 | ±10 | 0.5 | 630@5V | 1.23@4V | 46@10V | 150 | Tape and Reel | 3 | VESM | SOT | No | No | No | No | EAR99 | No | ||||||||||
TK9J90E,S1E(S
Trans MOSFET N-CH Si 900V 9A 3-Pin(3+Tab) TO-3PN
|
Bestand
25
Von 1,7189 € bis 2,044 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | Si | pi-MOS VIII | Single | Enhancement | N | 1 | 900 | ±30 | 4 | 9 | 1300@10V | 46@10V | 46 | 2000@25V | 250000 | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | No | |||||||
SSM5N15FE(TE85L,F)
Trans MOSFET N-CH Si 30V 0.1A 5-Pin ESV T/R
|
Bestand
2.430
|
Toshiba | MOSFETs | Small Signal | Si | Dual Common Source | Enhancement | N | 2 | 30 | ±20 | 0.1 | 4000@4V | 7.8@3V | 150 | Tape and Reel | 5 | ESV | SOT | No | No | No | No | No | EAR99 | No | ||||||||||
SSM3K35AMFV,L3F
Trans MOSFET N-CH Si 20V 0.25A 3-Pin VESM T/R
|
Bestand
6.836
Von 0,0194 € bis 0,1396 €
pro Stück
|
Toshiba | MOSFETs | Small Signal | Si | Single | Enhancement | N | 1 | 20 | ±10 | 0.25 | 1100@4.5V | 0.62@4.5V | 18@10V | 500 | Tape and Reel | 3 | VESM | SOT | No | No | No | No | EAR99 | No | ||||||||||
SSM3K7002KFU,LXG(T
Trans MOSFET N-CH Si 60V 0.4A 3-Pin USM T/R Automotive AEC-Q101
|
Bestand
2.690
|
Toshiba | MOSFETs | Small Signal | Si | Single | Enhancement | N | 1 | 60 | ±20 | 0.4 | 1500@10V | 0.39@4.5V | 26@10V | 700 | Tape and Reel | 3 | USM | No | Yes | AEC-Q101 | Yes | Unknown | No | |||||||||||
| SSM6N67NU,LF(T Trans MOSFET N-CH Si 30V 4A 6-Pin UDFN EP |
Bestand
1.715
|
Toshiba | MOSFETs | Power MOSFET | Si | Dual | Enhancement | N | 2 | 30 | 12 | 4 | 39.1@4.5V | 3.2@4.5V | 310@15V | 2000 | 6 | UDFN EP | DFN | No | No | No | No | EAR99 | No | |||||||||||
SSM6J412TU,LF(T
Trans MOSFET P-CH Si 20V 4A 6-Pin UF T/R
|
Bestand
2.475
|
Toshiba | MOSFETs | Power MOSFET | Si | Single Quad Drain | Enhancement | P | 1 | 20 | ±8 | 1 | 4 | 42.7@4.5V | 12.8@4.5V | 840@10V | 1000 | Tape and Reel | 6 | UF | No | No | No | No | No | EAR99 | No | |||||||||
TK090A65Z,S4X(S
Trans MOSFET N-CH Si 650V 30A 3-Pin(3+Tab) TO-220SIS
|
Bestand
4
|
Toshiba | MOSFETs | Power MOSFET | Si | Single | Enhancement | N | 1 | 650 | ±30 | 30 | 90@10V | 47@10V | 2780@300V | 45000 | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | ||||||||||||
TK14N65W,S1F
Trans MOSFET N-CH Si 650V 13.7A 3-Pin(3+Tab) TO-247 Tube
|
Bestand
30
1,1282 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | Si | Single | Enhancement | N | 1 | 650 | ±30 | 3.5 | 13.7 | 250@10V | 35@10V | 35 | 1300@300V | 130000 | Tube | 3 | TO-247 | TO | No | No | No | No | No | EAR99 | No | |||||||
SSM3K72KFS,LF(T
Trans MOSFET N-CH Si 60V 0.3A Automotive AEC-Q101 3-Pin SSM T/R
|
Bestand
2.294
|
Toshiba | MOSFETs | Small Signal | Si | Single | Enhancement | N | 1 | 60 | ±20 | 0.3 | 1500@10V | 0.39@4.5V | 26@10V | 500 | Tape and Reel | 3 | SSM | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||
TK31N60W5,S1VF(S
Trans MOSFET N-CH Si 600V 30.8A 3-Pin(3+Tab) TO-247
|
Bestand
30
|
Toshiba | MOSFETs | Power MOSFET | Si | DTMOSIV | Single | Enhancement | N | 1 | 600 | ±30 | 4.5 | 30.8 | 99@10V | 105@10V | 105 | 3000@300V | 230000 | 3 | TO-247 | TO | No | No | No | No | No | EAR99 | No | |||||||
| TPW1500CNH,L1Q(M Trans MOSFET N-CH Si 150V 50A 8-Pin DSOP Advance T/R |
Bestand
5.000
|
Toshiba | MOSFETs | Power MOSFET | Si | Single Quad Drain Triple Source | Enhancement | N | 1 | 150 | ±20 | 4 | 50 | 15.4@10V | 22@10V | 22 | 1700@75V | 2500 | Tape and Reel | 8 | DSOP Advance | SO | No | No | No | No | EAR99 | Yes | Yes | |||||||
TK14A65W,S5X(M
Trans MOSFET N-CH Si 650V 13.7A 3-Pin(3+Tab) TO-220SIS Tube
|
Bestand
50
|
Toshiba | MOSFETs | Power MOSFET | Si | Single | Enhancement | N | 1 | 650 | ±30 | 3.5 | 13.7 | 250@10V | 35@10V | 35 | 1300@300V | 40000 | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | No | ||||||||
TK5A90E,S4X(S
Trans MOSFET N-CH Si 900V 4.5A 3-Pin(3+Tab) TO-220SIS
|
Bestand
59
|
Toshiba | MOSFETs | Power MOSFET | Si | Single | Enhancement | N | 1 | 900 | ±30 | 4.5 | 3100@10V | 20@10V | 950@25V | 40000 | 3 | TO-220SIS | TO | No | No | No | EAR99 | |||||||||||||
TPWR8004PL,L1Q(M
Trans MOSFET N-CH Si 40V 340A 8-Pin DSOP Advance T/R
|
Bestand
4.808
|
Toshiba | MOSFETs | Power MOSFET | Si | Single Quad Drain Triple Source | Enhancement | N | 1 | 40 | ±20 | 2.4 | 340 | 0.8@10V | 49@4.5V|103@10V | 103 | 7370@20V | 3000 | Tape and Reel | 8 | DSOP Advance | SO | No | No | No | No | No | EAR99 | No | |||||||
SSM6K514NU,LF(T
Trans MOSFET N-CH Si 40V 12A Automotive AEC-Q101 6-Pin UDFN-B EP T/R
|
Bestand
2.990
|
Toshiba | MOSFETs | Power MOSFET | Si | Single Quad Drain | Enhancement | N | 1 | 40 | ±20 | 12 | 11.6@10V | 7.5@4.5V | 1110@20V | 2500 | Tape and Reel | 6 | UDFN-B EP | DFN | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||
TPH5R60APL,L1Q(M
Trans MOSFET N-CH Si 100V 60A 8-Pin SOP Advance
|
Bestand
24
|
Toshiba | MOSFETs | Power MOSFET | Si | Single Quad Drain Triple Source | Enhancement | N | 1 | 100 | ±20 | 60 | 5.6@10V | 26@4.5V|52@10V | 3300@50V | 132000 | 8 | SOP Advance | SO | No | No | No | ||||||||||||||
TK1K9A60F,S4X
Trans MOSFET N-CH Si 600V 3.7A 3-Pin(3+Tab) TO-220SIS Tube
|
Bestand
19
0,2654 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | Si | Single | Enhancement | N | 1 | 600 | ±30 | 3.7 | 1900@10V | 14@10V | 14 | 490@300V | 30000 | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | ||||||||||
TK31V60W,LVQ
TK31V60W,LVQ Toshiba MOSFETs Transistor N-CH Si 600V 30.8A 5-Pin DFN EP T/R Si - Arrow.com
|
Bestand
1.033
3,3694 €
pro Stück
|
Toshiba | MOSFETs | Power MOSFET | Si | Single Triple Source | Enhancement | N | 1 | 600 | ±30 | 3.7 | 30.8 | 98@10V | 86@10V | 86 | 3000@300V | 240000 | Tape and Reel | 5 | DFN EP | No | No | No | No | EAR99 | No |