Infineon Technologies AG Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Maximum Rate of Rise of Off-State Voltage - (V/us) | Maximum Breakover Voltage - (V) | Category | Bridge Type | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Diode Type | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Peak RMS Reverse Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Power Dissipation - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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Meist Gesucht
BAR6405WH6327XTSA1
Diode PIN Attenuator/Switch 150V 100mA 3-Pin SOT-323 T/R Automotive AEC-Q101
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Bestand
6.000
0,0488 €
pro Stück
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Infineon Technologies AG | PIN | Switch|Attenuator | VHF|UHF|SHF|MF|HF | Dual Common Cathode | 150 | 100 | 1.35@100mA | 1.1 | 20@1mA | 0.02 | 250 | 0.35@20V | 1.55 | Tape and Reel | 3 | SOT-323 | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Meist Gekauft
BAS4002ARPPE6327HTSA1
Rectifier Bridge Diode Single 40V 0.2A Automotive AEC-Q101 4-Pin SOT-143 T/R
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Bestand
13.290
Von 0,1145 € bis 0,1259 €
pro Stück
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Infineon Technologies AG | Brückengleichrichter | Single Phase | Schottky Diode | Single | 40 | 0.2 | 28 | 2 | 0.79 | 10 | Tape and Reel | 4 | SOT-143 | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Meist Gesucht
FS100R12PT4BOSA1
Trans IGBT Module N-CH 1200V 135A 500W 20-Pin ECONO4-1 Tray
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Bestand
5
106,5822 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Hex | ±20 | 1200 | 135 | 500 | Tray | 20 | ECONO4-1 | No | No | Unknown | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC009NE2LS5ATMA1
Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP T/R
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Bestand
5.000
0,5557 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 25 | 16 | 50 | 2 | 2500 | 41 | 0.9@10V | 20@4.5V|43@10V | 1.7 | 43 | 2900@12V | 0.75@10V|0.95@4.5V | Tape and Reel | 8 | TDSON EP | SON | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLMS6702TRPBF
Trans MOSFET P-CH Si 20V 2.4A 6-Pin TSOP T/R
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Bestand
9
0,134 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | P | Single Quad Drain | Enhancement | 1 | 20 | ±12 | 75 | 0.7(Min) | 1700 | 2.4 | 200@4.5V | 5.8@4.5V | 130 | 210@15V | Tape and Reel | 6 | TSOP | SO | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMBG65R022M1HXTMA1
Trans MOSFET N-CH SiC 650V 64A 8-Pin(7+Tab) TO-263 T/R
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Bestand
288
Von 7,6763 € bis 8,1988 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Single Hex Source | Enhancement | 1 | 650 | 23 | 300000 | 64 | 30@18V | 67@18V | 2288@400V | Tape and Reel | 8 | TO-263 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPT60R028G7XTMA1
Trans MOSFET N-CH 600V 75A 9-Pin(8+Tab) HSOF T/R
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Bestand
3.391
Von 6,3781 € bis 6,6199 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Seven Source | Enhancement | 1 | 600 | 20 | 62 | 4 | 391000 | 75 | 28@10V | 123@10V | 0.32 | 123 | 4820@400V | 24@10V | Tape and Reel | 9 | HSOF | SO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD30N12S3L31ATMA1
Trans MOSFET N-CH 120V 30A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
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Bestand
5.000
Von 0,3373 € bis 0,3455 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 120 | ±20 | 2.4 | 57000 | 30 | 31@10V | 24@10V | 2.6 | 24 | 1520@25V | 26@10V|32@4.5V | Tape and Reel | 3 | DPAK | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA65R190C7XKSA1
Trans MOSFET N-CH 650V 8A 3-Pin(3+Tab) TO-220FP Tube
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Bestand
69
1,2938 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 650 | 20 | 80 | 4 | 30000 | 8 | 190@10V | 23@10V | 23 | 1150@400V | 168@10V | Tube | 3 | TO-220FP | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPF042N10NF2SATMA1
Trans MOSFET N-CH 100V 21A 8-Pin(7+Tab) D2PAK T/R
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Bestand
800
Von 0,6729 € bis 1,9615 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quint Source | Enhancement | 1 | 100 | 20 | 3800 | 21 | 4.25@10V | 57@10V | 57 | 4000@50V | Tape and Reel | 8 | D2PAK | TO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF6775MTRPBF
Trans MOSFET N-CH Si 150V 4.9A 7-Pin Direct-FET MZ T/R
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Bestand
1.442
Von 0,6112 € bis 0,6735 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Dual Source | Enhancement | 1 | 150 | ±20 | 5 | 2800 | 4.9 | 56@10V | 25@10V | 25 | 1411@25V | 47@10V | Tape and Reel | 7 | Direct-FET MZ | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB60R299CPAATMA1
Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
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Bestand
1.000
3,4577 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 600 | ±20 | 3.5 | 96000 | 11 | 299@10V | 22@10V | 22 | 1100@100V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FF750R17ME7DPB11BPSA1
Trans IGBT Module N-CH 1700V 650A 11-Pin Tray
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Bestand
6
216,8473 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Dual | ±20 | 1700 | 650 | Tray | 11 | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSC014N06NSATMA1
Trans MOSFET N-CH 60V 31A 8-Pin TDSON EP T/R
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Bestand
5.000
0,9701 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 60 | ±20 | 50 | 3.3 | 3000 | 31 | 1.45@10V | 89@10V | 0.8 | 89 | 6500@30V | 1.2@10V|1.6@6V | Tape and Reel | 8 | TDSON EP | SON | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPG20N06S2L65ATMA1
Trans MOSFET N-CH 55V 20A 8-Pin TDSON EP T/R Automotive AEC-Q101
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Bestand
8.878
Von 0,5607 € bis 1,3519 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Dual Dual Drain | Enhancement | 2 | 55 | ±20 | 2 | 43000 | 20 | 65@10V | 9.4@10V | 9.4 | 315@25V | 53@10V|67@4.5V | Tape and Reel | 8 | TDSON EP | SON | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AIKW50N60CTXKSA1
IGBT Chip with Fast Recovery Emitter Controlled Diode Automotive AEC-Q101
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Bestand
190
Von 4,7593 € bis 6,0921 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | 600 | 333 | Tube | 3 | TO-247 | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IQD016N08NM5ATMA1 N-channel Power MOSFET |
Bestand
150
Von 2,0417 € bis 2,1457 €
pro Stück
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Infineon Technologies AG | MOSFETs | 8 | TSON EP | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPN60R600PFD7SATMA1
600V CoolMOS™ PFD7 superjunction MOSFET in SOT-223 package
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Bestand
3.000
0,2596 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 600 | 20 | 4.5 | 7000 | 6 | 600@10V | 8.5@10V | 8.5 | 344@400V | Tape and Reel | 3 | SOT-223 | SOT | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAS40E8224HTMA1 Silicon Schottky Diode |
Bestand
20.000
0,0251 €
pro Stück
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Infineon Technologies AG | Gleichrichter | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IQDH45N04LM6SCATMA1
Trans MOSFET N-CH 40V 58A 8-Pin WHSON EP T/R
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Bestand
84
Von 1,4931 € bis 1,838 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 40 | 20 | 3000 | 58 | 0.49@10V | 62@4.5V|129@10V | 129 | 9000@20V | 8 | WHSON EP | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFL024NTRPBF
Trans MOSFET N-CH Si 55V 4A 4-Pin(3+Tab) SOT-223 T/R
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Bestand
41
Von 0,1503 € bis 0,2365 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single Dual Drain | Enhancement | 1 | 55 | ±20 | 4 | 2100 | 4 | 75@10V | 18.3(Max)@10V | 18.3(Max) | 400@25V | Tape and Reel | Unknown | 4 | SOT-223 | SOT | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSD314SPE L6327
Trans MOSFET P-CH 30V 1.5A 6-Pin SOT-363 T/R Automotive AEC-Q101
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Bestand
956
Von 0,0309 € bis 0,0347 €
pro Stück
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Infineon Technologies AG | MOSFETs | Small Signal | P | Single Quad Drain | Enhancement | 1 | 30 | ±20 | 2 | 500 | 1.5 | 140@10V | 2.9@10V | 2.9 | 221@15V | Tape and Reel | 6 | SOT-363 | SOT | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPQC65R125CFD7AXTMA1
Trans MOSFET N-CH 650V 24A 22-Pin HDSOP EP T/R Automotive AEC-Q101
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Bestand
750
Von 0,8908 € bis 0,9665 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Ten Source Eleven Drain | Enhancement | 1 | 650 | 20 | 160000 | 24 | 125@10V | 32@10V | 32 | 1566@400V | 22 | HDSOP EP | SO | Yes | AEC-Q101 | Yes | Yes | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPW60R099C6FKSA1
Trans MOSFET N-CH 600V 37.9A 3-Pin(3+Tab) TO-247 Tube
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Bestand
561
2,9594 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 600 | 20 | 62 | 3.5 | 278000 | 37.9 | 99@10V | 119@10V | 119 | 2660@100V | Tube | 3 | TO-247 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFU4615PBF
Trans MOSFET N-CH 150V 33A 3-Pin(3+Tab) IPAK Tube
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Bestand
75
0,6732 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 150 | ±20 | 100 | 5 | 144000 | 33 | 42@10V | 26@10V | 1.045 | 26 | 155 | 1750@50V | 34@10V | Tube | 3 | IPAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes |