Infineon Technologies AG Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Maximum Breakover Voltage - (V) | Material | Category | Bridge Type | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Frequency Band | Diode Type | Channel Type | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Number of Elements per Chip | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Surge Current Rating - (A) | Peak On-State Voltage - (V) | Peak Average Forward Current - (A) | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (A) | Maximum Continuous DC Collector Current - (mA) | Maximum Collector-Base Voltage - (V) | Peak RMS Reverse Voltage - (V) | Mode of Operation | Typical Input Resistance - (kOhm) | Rated Average On-State Current - (A) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Holding Current - (mA) | Maximum Drain-Source Voltage - (V) | Maximum Continuous Drain Current - (mA) | Maximum Base-Emitter Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum Forward Voltage - (V) | Maximum DC Collector Current - (A) | Peak Reverse Current - (uA) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Diode Capacitance - (pF) | Repetitive Peak Forward Blocking Voltage - (V) | Typical Carrier Life Time - (us) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Transition Frequency - (MHz) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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IPD30N06S4L23ATMA2
Trans MOSFET N-CH 60V 30A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
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Bestand
6.574
Von 0,3285 € bis 0,4928 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 36000 | 60 | 30 | ±16 | 2.2 | 23@10V | 16.1@10V | 16.1 | 1200@25V | 18@10V|27@4.5V | Tape and Reel | 3 | DPAK | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB60R099CPATMA1
Trans MOSFET N-CH 650V 31A 3-Pin(2+Tab) D2PAK T/R
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Bestand
16.103
Von 3,3756 € bis 6,3545 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 255000 | 650 | 31 | ±20 | 3.5 | 99@10V | 60@10V | 0.5 | 60 | 2800@100V | Tape and Reel | 3 | D2PAK | TO | No | Yes | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPB020NE7N3GATMA1
Trans MOSFET N-CH 75V 120A 3-Pin(2+Tab) D2PAK T/R
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Bestand
3.328
Von 1,9275 € bis 2,0583 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 300000 | 75 | 120 | ±20 | 3.8 | 2@10V | 155@10V | 155 | 10800@37.5V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA057N08N3GXKSA1
Trans MOSFET N-CH 80V 60A 3-Pin(3+Tab) TO-220FP Tube
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Bestand
1.000
Von 0,9071 € bis 2,5803 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 39000 | 80 | 60 | ±20 | 3.5 | 5.7@10V | 52@10V | 52 | 3570@40V | 4.9@10V|6.3@6V | Tube | 3 | TO-220FP | TO | No | No | Unknown | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKW15N120H3FKSA1
Trans IGBT Chip N-CH 1200V 30A 217W Automotive 3-Pin(3+Tab) TO-247 Tube
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Bestand
720
Von 1,7554 € bis 4,2657 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | N | Single | ±20 | 1200 | 30 | 217 | Tube | 3 | TO-247 | TO | No | No | Unknown | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKP20N65H5XKSA1
Trans IGBT Chip N-CH 650V 42A 125W 3-Pin(3+Tab) TO-220 Tube
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Bestand
500
Von 0,973 € bis 1,9175 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | Trench Stop 5 | N | Single | ±20 | 650 | 42 | 125 | Tube | 3 | TO-220 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSZ050N03MSGATMA1
Trans MOSFET N-CH 30V 15A 8-Pin TSDSON EP T/R
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Bestand
5.000
0,162 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 2100 | 30 | 15 | ±20 | 2 | 4.5@10V | 17@4.5V|34@10V | 34 | 2700@15V | 3.8@10V|4.6@4.5V | Tape and Reel | 8 | TSDSON EP | SON | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SMBT2222AE6327HTSA1
Trans GP BJT NPN 40V 0.6A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R
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Bestand
100.637
Von 0,0328 € bis 0,0823 €
pro Stück
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Infineon Technologies AG | GP BJT | NPN | Si | Bipolar Small Signal | Single | 1 | 40 | 1.2@15mA@150mA|2@50mA@500mA | 75 | 330 | 6 | 0.6 | 30 to 50|50 to 120 | 35@100uA@10V|50@1mA@10V|75@10mA@10V|50@150mA@1V|100@150mA@10V|40@500mA@10V | 0.3@15mA@150mA|1@50mA@500mA | Tape and Reel | 3 | SOT-23 | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP90N20DPBF
Trans MOSFET N-CH 200V 94A 3-Pin(3+Tab) TO-247AC Tube
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Bestand
5.617
Von 1,9574 € bis 4,6144 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 580000 | 200 | 94 | ±30 | 5 | 23@10V | 180@10V | 180 | 6040@25V | Tube | Unknown | 3 | TO-247AC | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFB4620PBF
Trans MOSFET N-CH 200V 25A 3-Pin(3+Tab) TO-220AB Tube
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Bestand
847
Von 0,8062 € bis 1,5025 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 144000 | 200 | 25 | ±20 | 5 | 72.5@10V | 25@10V | 25 | 1710@50V | Tube | 3 | TO-220AB | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFB4310ZPBF
Trans MOSFET N-CH Si 100V 127A 3-Pin(3+Tab) TO-220AB Tube
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Bestand
1.717
Von 0,9927 € bis 2,8082 €
pro Stück
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Infineon Technologies AG | MOSFETs | Si | Power MOSFET | N | Single | Enhancement | 1 | 250000 | 100 | 127 | ±20 | 4 | 6@10V | 120@10V | 0.6 | 120 | 6860@50V | 4.8@10V | Tube | 3 | TO-220AB | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFB3206GPBF
Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-220AB Tube
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Bestand
466
0,748 €
pro Stück
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Infineon Technologies AG | MOSFETs | Si | Power MOSFET | N | Single | Enhancement | 1 | 300000 | 60 | 210 | ±20 | 3@10V | 120@10V | 0.5 | 120 | 6540@50V | Tube | 3 | TO-220AB | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPN60R1K0CEATMA1
Trans MOSFET N-CH 600V 6.8A 3-Pin(2+Tab) SOT-223 T/R
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Bestand
48.224
Von 0,1555 € bis 0,0963 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 5000 | 600 | 6.8 | 20 | 75 | 3.5 | 1000@10V | 13@10V | 13 | 280@100V | 900@10V | Tape and Reel | 3 | SOT-223 | SOT | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPG20N04S412ATMA1
Trans MOSFET N-CH 40V 20A 8-Pin TDSON EP T/R Automotive AEC-Q101
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Bestand
5.000
0,3461 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Dual Dual Drain | Enhancement | 2 | 41000 | 40 | 20 | ±20 | 4 | 12.2@10V | 14@10V | 3.7 | 14 | 1130@25V | 11.1@10V | Tape and Reel | 8 | TDSON EP | SON | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC061N08NS5ATMA1
Trans MOSFET N-CH 80V 82A 8-Pin TDSON EP T/R
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Bestand
5.000
0,6124 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 2500 | 80 | 82 | 20 | 50 | 3.8 | 6.1@10V | 27@10V | 1.7 | 27 | 1900@40V | 5.2@10V|7.4@6V | Tape and Reel | 8 | TDSON EP | SON | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSC028N06NSTATMA1
Trans MOSFET N-CH 60V 24A 8-Pin TDSON EP T/R
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Bestand
5.000
0,8869 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 3000 | 60 | 24 | 20 | 50 | 2.8@10V | 37@10V | 1.5 | 37 | 2700@30V | 2.3@10V|3.4@6V | Tape and Reel | 8 | TDSON EP | SON | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP011N04NF2SAKMA1
Trans MOSFET N-CH 40V 44A 3-Pin(3+Tab) TO-220 Tube
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Bestand
852
0,4856 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 3800 | 40 | 44 | 20 | 1.15@10V | 210@10V | 210 | 14900@20V | Tube | 3 | TO-220 | TO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSC123N08NS3GATMA1
Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP T/R
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Bestand
8.065
Von 0,4318 € bis 1,0544 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 2500 | 80 | 11 | ±20 | 62 | 3.5 | 12.3@10V | 19@10V | 18 | 19 | 385 | 1430@40V | 14.1@6V|10.3@10V | Tape and Reel | 8 | TDSON EP | SON | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SPD03N60C3ATMA1
Trans MOSFET N-CH 600V 3.2A 3-Pin(2+Tab) DPAK T/R
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Bestand
35.000
Von 0,3744 € bis 0,4134 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 38000 | 600 | 3.2 | ±20 | 75 | 3.9 | 1400@10V | 13@10V | 13 | 400@25V | Tape and Reel | 3 | DPAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF3805PBF
Trans MOSFET N-CH Si 55V 210A 3-Pin(3+Tab) TO-220AB Tube
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Bestand
4.770
Von 1,3889 € bis 3,7326 €
pro Stück
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Infineon Technologies AG | MOSFETs | Si | Power MOSFET | N | Single | Enhancement | 1 | 300000 | 55 | 210 | ±20 | 4 | 3.3@10V | 190@10V | 190 | 7960@25V | 2.6@10V | Tube | 3 | TO-220AB | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCX41E6327HTSA1
Trans GP BJT NPN 125V 0.8A 330mW 3-Pin SOT-23 T/R Automotive AEC-Q101
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Bestand
12.000
0,0683 €
pro Stück
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Infineon Technologies AG | GP BJT | NPN | Si | Bipolar Small Signal | Single | 1 | 125 | 1.4@30mA@300mA | 125 | 330 | 5 | 0.8 | 2 to 30|30 to 50|50 to 120 | 25@100uA@1V|63@100mA@1V|40@200mA@1V | 0.9@30mA@300mA | Tape and Reel | 3 | SOT-23 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSZ065N06LS5ATMA1
Trans MOSFET N-CH 60V 14A 8-Pin TSDSON EP T/R
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Bestand
20.000
0,4795 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 2100 | 60 | 14 | 20 | 62 | 2.3 | 6.5@10V | 10@4.5V | 1400@30V | 5.4@10V|7.3@4.5V | Tape and Reel | 8 | TSDSON EP | SON | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IHW40N65R5XKSA1
Trans IGBT Chip N-CH 650V 80A 230W 3-Pin(3+Tab) TO-247 Tube
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Bestand
240
Von 1,4657 € bis 3,3288 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | Trench Stop | N | Single | ±20 | 650 | 80 | 230 | Tube | 3 | TO-247 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPA075N15N3GXKSA1
Trans MOSFET N-CH 150V 43A 3-Pin(3+Tab) TO-220FP Tube
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Bestand
1.000
Von 2,9082 € bis 6,8814 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 39000 | 150 | 43 | ±20 | 4 | 7.5@10V | 70@10V | 70 | 5470@75V | 5.9@10V|6.2@8V | OptiMOS | Tube | 3 | TO-220FP | TO | No | No | Unknown | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPB038N12N3GATMA1
Trans MOSFET N-CH 120V 120A 3-Pin(2+Tab) D2PAK T/R
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Bestand
9.309
Von 2,099 € bis 4,4265 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 300000 | 120 | 120 | ±20 | 4 | 3.8@10V | 158@10V | 158 | 10400@60V | 3.2@10V|3.5@10V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes |