NXP Semiconductors Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Voltage Regulation - (mV) | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Regulator Current - (mA) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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BF1205C,115
Trans RF FET N-CH 6V 0.03A 6-Pin TSSOP T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual | Enhancement | 2 | 6 | 6 | 180 | 0.03 | 2.2@5V@Gate 1|3@5V@Gate 2@Amp A|2@5V@Gate 1|3.4@5V@Gate 2@Amp B | 35 | 1.9@Amp A|2.1@Amp B | Tape and Reel | 6 | TSSOP | SO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFR94A,215
Trans RF BJT NPN 15V 0.025A 300mW Automotive AEC-Q101 3-Pin TO-236AB T/R
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NXP Semiconductors | HF-BJT | NPN | Single | 15 | 20 | 1 | 2 | 0.025 | 300 | 50 to 120 | 65@15mA@10V | 5000(Typ) | 3(Typ) | Tape and Reel | 3 | TO-236AB | TO | No | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BT151-500C,127
Thyristor SCR 500V 110A 3-Pin(3+Tab) TO-220AB Rail
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NXP Semiconductors | Silicon Controlled Rectifiers - SCRs | 1000(Typ) | 50 | 1.5 | 500 | 15 | 20 | 1.75@23A | 5 | 500 | 7.5 | 0.5 | Tube | 3 | TO-220AB | TO | No | Unknown | Unknown | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAW62,113
Diode Switching 75V 0.25A 2-Pin ALF T/R
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NXP Semiconductors | Gleichrichter | Switching Diode | Single | 75 | 0.25 | 4 | 1@0.1A | 5 | 350 | 4 | Tape and Reel | 2 | ALF | DO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BB179LX,315
Varactor Diode Single 30V 18.2pF 2-Pin SOD T/R
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NXP Semiconductors | Varaktors | Tuner|VCO | UHF | Single | 30 | 0.01 | 8.45 | 1V/28V | 18.2@1V | Tape and Reel | 2 | SOD | SOD | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMRF5014H-500MHZ Trans RF MOSFET N-CH 125V 3-Pin NI-360H-2SB Each |
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NXP Semiconductors | HF-MOSFETs | MOSFET | GaN | N | Single | Enhancement | 1 | Pulse | 125 | 0 | 2.3 | 232000 | 51@50V | 18 | 1 | 125(Typ) | 2700 | Each | 3 | NI-360H-2SB | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF13750H-915MHZ
Trans RF MOSFET N-CH 105V 5-Pin NI-1230H
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1.091,7774 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Enhancement | CW | 105 | 10 | 2.3 | 1333000 | 20.5 | 700 | 850(Typ) | 1300 | 5 | NI-1230H | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF909WR,115
Trans RF MOSFET N-CH 7V 0.04A 4-Pin(3+Tab) CMPAK T/R
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NXP Semiconductors | HF-MOSFETs | N | Dual | Enhancement | 2 | 7 | 6 | 280 | 0.04 | 3.6@5V@Gate 1|2.3@5V@Gate 2 | 1000 | 2.8 | Tape and Reel | 4 | CMPAK | SOT | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFU910FX
Trans RF BJT NPN 9.5V 0.015A 300mW 4-Pin DFP T/R
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NXP Semiconductors | HF-BJT | NPN | SiGe | Single Dual Emitter | 9.5 | 9.5 | 1 | 1.5 | 0.015 | 2V | 300 | 500 to 3600 | 1200@1.5mA@1.5V | 0.035 | 15.5(Max) | 2(Typ) | 12.5 | 90000(Typ) | 0.85(Min) | Tape and Reel | 4 | DFP | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BAW62,143
Diode Switching 75V 0.25A 2-Pin ALF
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NXP Semiconductors | Gleichrichter | Switching Diode | Single | 75 | 0.25 | 4 | 1@0.1A | 5 | 350 | 4 | 2 | ALF | DO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PHN203,518
Trans MOSFET N-CH 30V 6.3A 8-Pin SO T/R
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NXP Semiconductors | MOSFETs | Power MOSFET | N | Dual Dual Drain | Enhancement | 2 | 30 | ±20 | 2000 | 6.3 | 30@10V | 14.6@10V | 14.6 | 560@20V | Tape and Reel | 8 | SO | SO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFT21S220W02GSR3 Trans RF MOSFET N-CH 65V 3-Pin NI-780GS T/R |
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 65 | 10 | 1.6 | 19.1 | 2110 | 50(Typ) | 2170 | Tape and Reel | 3 | NI-780GS | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFU520WX
Trans RF BJT NPN 16V 0.05A 450mW Automotive 3-Pin SC-70 T/R
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Von 0,1093 € bis 0,1209 €
pro Stück
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NXP Semiconductors | HF-BJT | NPN | Si | Single | 16 | 30 | 1 | 3 | 0.05 | 8V/10mA | 450 | 50 to 120 | 60@5mA@8V | 0.55 | 24 | 8.5(Typ) | 18 | 10000(Typ) | 1(Min) | Tape and Reel | 3 | SC-70 | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF6S19100NR1
Trans RF FET N-CH 68V 5-Pin TO-270 W T/R
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NXP Semiconductors | HF-MOSFETs | N | Single Dual Drain Dual Gate | Enhancement | 1 | 2-Carrier N-CDMA | 68 | ±12 | 287000 | 14.5 | 1930 | 100 | 1990 | Tape and Reel | 5 | TO-270 W | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BTA312B-600B,118
TRIAC 600V 12A(RMS) 110A 3-Pin(2+Tab) D2PAK T/R
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NXP Semiconductors | TRIACs | 2000(Typ) | 100 | 1 | 600 | 50 | 60 | 1.6@15A | 12 | 600 | 0.5 | Tape and Reel | 3 | D2PAK | TO | No | Unknown | Unknown | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFE6S9160HSR3
Trans RF MOSFET N-CH 66V 3-Pin NI-780S T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier N-CDMA|GSM|GSM EDGE|IS-95 CDMA|N-CDMA | 66 | 12 | 21 | 865 | 35(Typ) | 960 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BF512,215
Trans JFET N-CH 20V 30mA Si 3-Pin TO-236AB T/R
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NXP Semiconductors | JFETs | Si | N | Single | 20 | 20 | 430 | 250 | 30 | 1.5(Typ) | Tape and Reel | 3 | TO-236AB | TO | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BLT80,115
Trans RF BJT NPN 10V 0.25A 2000mW 4-Pin(3+Tab) SC-73 T/R
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NXP Semiconductors | HF-BJT | NPN | Si | Single Dual Emitter | 10 | 20 | 1 | 3 | 0.25 | 85 | 2000 | 2 to 30 | 25@150mA@5V | 0.8 | Tape and Reel | 4 | SC-73 | No | Unknown | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MAC223A6,127
TRIAC 400V 230A 3-Pin(3+Tab) TO-220AB Rail
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NXP Semiconductors | TRIACs | 1 | 400 | 75 | 30 | 1.55@30A | 400 | 0.5 | Rail | 3 | TO-220AB | TO | No | No | Unknown | Unknown | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BF1217WR,115
Trans RF FET N-CH 6V 0.03A 4-Pin(3+Tab) CMPAK T/R
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NXP Semiconductors | HF-MOSFETs | N | Single Dual Gate | Enhancement | 1 | 6 | 6 | 1 | 180 | 0.03 | 2.5@5V@Gate 1|1@5V@Gate 2 | 34 | 1.5(Typ) | Tape and Reel | 4 | CMPAK | SOT | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMN40LN,135
Trans MOSFET N-CH 30V 5.4A 6-Pin TSOP T/R
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NXP Semiconductors | MOSFETs | Power MOSFET | N | Single Quad Drain | Enhancement | 1 | 30 | ±15 | 1750 | 5.4 | 38@10V | 13.8@10V | 13.8 | 555@25V | Tape and Reel | 6 | TSOP | SO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BAV20,113
Diode Switching 200V 0.25A 2-Pin ALF T/R
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NXP Semiconductors | Gleichrichter | Switching Diode | Single | 200 | 0.25 | 9 | 1.25@0.2A | 0.1 | 375K/W | 400 | 5 | 50 | Tape and Reel | 2 | ALF | DO | No | Yes | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BA277,115
Diode PIN Switch 35V 100mA 2-Pin SOD-523 T/R
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NXP Semiconductors | PIN | Switch | VHF | Single | 35 | 100 | 0.7@2mA | 1@10mA | 715 | 1.2@6V | Tape and Reel | 2 | SOD-523 | SOD | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF101AN-40MHZ
Trans RF MOSFET N-CH 133V 3-Pin(3+Tab) TO-220
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Von 424,4761 € bis 438,1407 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Single | Enhancement | 1 | CW | 133 | 10 | 2.7 | 182000 | 149@50V | 21.1 | 1.8 | 115(Typ) | 250 | 3 | TO-220 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMN38EN,135
Trans MOSFET N-CH 30V 5.4A 6-Pin TSOP T/R
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NXP Semiconductors | MOSFETs | Power MOSFET | N | Single Quad Drain | Enhancement | 1 | 30 | ±20 | 1750 | 5.4 | 38@10V | 6.1@4.5V | 495@25V | Tape and Reel | 6 | TSOP | SO | No | No | No | No | EAR99 | No | No |