NXP Semiconductors Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Voltage Regulation - (mV) | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Regulator Current - (mA) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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MRF7S21170HSR3
Trans RF MOSFET N-CH 65V 3-Pin NI-880S T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 65 | 10 | 16 | 2110 | 170 | 2170 | Tape and Reel | 3 | NI-880S | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BTA204-600E,127
TRIAC 600V 27A 3-Pin(3+Tab) TO-220AB Rail
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NXP Semiconductors | TRIACs | 50(Min) | 100 | 1 | 600 | 25 | 12 | 1.7@5A | 600 | 0.5 | Rail | 3 | TO-220AB | TO | No | Unknown | Unknown | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BB178,315
Diode VAR Cap Single 35V 34.65pF 2-Pin SOD-523 T/R
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NXP Semiconductors | Varaktors | Tuner|VCO | UHF|VHF | Single | 35 | 0.01 | 13.5 | 1V/28V | 34.65@1V | Tape and Reel | 2 | SOD-523 | SOD | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFG425W
Trans RF BJT NPN 4.5V 0.03A 135mW 4-Pin(3+Tab) CMPAK
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NXP Semiconductors | HF-BJT | NPN | Si | Single Dual Emitter | 4.5 | 10 | 1 | 1 | 0.03 | 2V/25mA | 135 | 50 to 120 | 50@25mA@2V | 0.3 | 20 | 12(Typ) | 22 | 25000(Typ) | 1.2(Typ) | 4 | CMPAK | SOT | No | Unknown | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BTA216-600D,127
TRIAC 600V 150A 3-Pin(3+Tab) TO-220AB Rail
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NXP Semiconductors | TRIACs | 30(Min) | 100 | 1.5 | 600 | 5 | 15 | 1.5@20A | 600 | 0.5 | Rail | 3 | TO-220AB | TO | No | Unknown | Unknown | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFG541,115
Trans RF BJT NPN 15V 0.12A 650mW 4-Pin(3+Tab) SC-73 T/R
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NXP Semiconductors | HF-BJT | NPN | Si | Single Dual Emitter | 15 | 20 | 1 | 2.5 | 0.12 | 8V/40mA | 650 | 50 to 120 | 60@40mA@8V | 1 | 15 | 21(Typ) | 34 | 9000(Typ) | 1.8 | Tape and Reel | 4 | SC-73 | No | Unknown | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BT138-800E/DG,127 TRIAC SENS GATE 800V 12A TO220AB |
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NXP Semiconductors | TRIACs | 3 | TO-220AB | TO | No | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMRF1021NT1
Trans RF MOSFET N-CH 30V 3-Pin PLD-1.5W T/R
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Enhancement | CW | 30 | 12 | 114000 | 107@7.5V | 15.6 | 136 | 7.3(Typ) | 941 | 3 | PLD-1.5W | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAT85,113
Diode Schottky 0.2A 2-Pin DO-34 T/R
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NXP Semiconductors | Gleichrichter | Schottky Diode | Single | 0.2 | 5 | 0.8@0.1A | 2@25V | 320K/W | 10 | 4 | Planar | Tape and Reel | 2 | DO-34 | DO | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMRF5014H-200MHZ Trans RF MOSFET N-CH 125V 3-Pin NI-360H-2SB Each |
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NXP Semiconductors | HF-MOSFETs | MOSFET | GaN | N | Single | Enhancement | 1 | Pulse | 125 | 0 | 2.3 | 232000 | 51@50V | 18 | 1 | 125(Typ) | 2700 | Each | 3 | NI-360H-2SB | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Z0103MN0,135
TRIAC 600V 1A(RMS) 13.8A 4-Pin(3+Tab) SC-73 T/R
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NXP Semiconductors | TRIACs | 80(Min) | 50 | 1 | 600 | 5 | 7 | 1.6@1A | 1 | 600 | 0.5 | Tape and Reel | 4 | SC-73 | No | Unknown | Unknown | Unknown | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFE6S9160HSR3
Trans RF MOSFET N-CH 66V 3-Pin NI-780S T/R
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier N-CDMA|GSM|GSM EDGE|IS-95 CDMA|N-CDMA | 66 | 12 | 21 | 865 | 35(Typ) | 960 | Tape and Reel | 3 | NI-780S | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BLF6G10LS-135R,112
Trans RF MOSFET N-CH 65V 32A 3-Pin SOT-502B Blister
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 2-Carrier W-CDMA | 65 | 13 | 32 | 100(Typ)@6.15V | 21 | 700 | 26.5(Typ) | 1000 | 0.14um | Blister | 3 | SOT-502B | SOT | No | No | Unknown | Unknown | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BYV415W-600PQ
Diode Switching 600V 30A 3-Pin(3+Tab) TO-247
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NXP Semiconductors | Gleichrichter | Switching Diode | Dual Common Cathode | 600 | 30 | 150 | 2.1@15A | 10 | 50 | 3 | TO-247 | No | No | Unknown | Unknown | Unknown | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF512,215
Trans JFET N-CH 20V 30mA Si 3-Pin TO-236AB T/R
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NXP Semiconductors | JFETs | Si | N | Single | 20 | 20 | 430 | 250 | 30 | 1.5(Typ) | Tape and Reel | 3 | TO-236AB | TO | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMN23UN,135
Trans MOSFET N-CH 20V 6.3A 6-Pin TSOP T/R
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NXP Semiconductors | MOSFETs | Power MOSFET | N | Single Quad Drain | Enhancement | 1 | 20 | ±8 | 1750 | 6.3 | 28@4.5V | 10.6@4.5V | 740@10V | Tape and Reel | 6 | TSOP | SO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMDPB38UNE,115
Trans MOSFET N-CH 20V 4A 6-Pin HUSON EP T/R
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NXP Semiconductors | MOSFETs | Power MOSFET | N | Dual Dual Drain | Enhancement | 2 | 20 | 8 | 1 | 1200 | 4 | 46@4.5V | 2.9@4.5V | 268@10V | Tape and Reel | 6 | HUSON EP | SON | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFT21S220W02GSR3 Trans RF MOSFET N-CH 65V 3-Pin NI-780GS T/R |
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NXP Semiconductors | HF-MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA | 65 | 10 | 1.6 | 19.1 | 2110 | 50(Typ) | 2170 | Tape and Reel | 3 | NI-780GS | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFX1K80H-27MHZ
Trans RF MOSFET N-CH 179V 5-Pin NI-1230H
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Von 1.819,1784 € bis 2.186,5009 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | MOSFET | N | Dual Common Source | Enhancement | 2 | CW | 179 | 10 | 2247000 | 760@65V | 27.8 | 1.8 | 1800(Typ) | 400 | 5 | NI-1230H | No | No | No | No | 3B992 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFG505,215
Trans RF BJT NPN 15V 0.018A 150mW 4-Pin(3+Tab) SOT-143B T/R
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NXP Semiconductors | HF-BJT | NPN | Si | Single Dual Emitter | 15 | 20 | 1 | 2.5 | 0.018 | 150 | 50 to 120 | 60@5mA@6V | 20 | 9000(Typ) | 2.1 | Tape and Reel | 4 | SOT-143B | SOT | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAT54A,215
Diode Schottky 0.2A 3-Pin SOT-23 T/R
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NXP Semiconductors | Gleichrichter | Schottky Diode | Dual Common Anode | 0.2 | 0.6 | 0.8@0.1A | 2@25V | 500K/W | 250 | 10 | 5 | Tape and Reel | 3 | SOT-23 | SOT | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A3V07H600-42NR6 Trans RF MOSFET N-CH 105V 6-Pin DFM T/R |
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NXP Semiconductors | HF-MOSFETs | 6 | DFM | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAT54
Diode Schottky 0.2A 3-Pin SOT-23
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NXP Semiconductors | Gleichrichter | Schottky Diode | Single | 0.2 | 0.6 | 0.8@0.1A | 2@25V | 500K/W | 250 | 10 | 5 | 3 | SOT-23 | SOT | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MHT1803A
Trans RF MOSFET 50V 3-Pin(3+Tab) SIL Tube
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18,3436 €
pro Stück
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NXP Semiconductors | HF-MOSFETs | Single | 1 | CW | 50 | 28.2 | 1.8 | 330(Typ) | 50 | Tube | 3 | SIL | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC869,115
Trans GP BJT PNP 20V 2A 1350mW 4-Pin(3+Tab) SOT-89 T/R Automotive AEC-Q101
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NXP Semiconductors | GP BJT | PNP | Bipolar Power | Single Dual Collector | 20 | 32 | 1 | 5 | 2 | 250 | 1350 | 30 to 50|50 to 120 | 50@5mA@10V|85@500mA@1V|60@1A@1V|40@2A@1V | 28 | 0.5@100mA@1A|0.6@200mA@2A | Tape and Reel | 4 | SOT-89 | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | No |