Infineon Technologies AG Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Maximum Breakover Voltage - (V) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Peak On-State Voltage - (V) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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| DDB6U50N16W1RPBPSA1 Trans IGBT Module N-CH 1200V 50A 26-Pin Tray |
Bestand
288
10,6166 €
pro Stück
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Infineon Technologies AG | IGBT-Module | N | Single | ±20 | 1200 | 50 | Tray | 26 | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB60R199CPATMA1
Trans MOSFET N-CH 650V 16A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
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Bestand
2.000
1,9246 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 650 | ±20 | 3.5 | 16 | 199@10V | 32@10V | 62 | 0.9 | 32 | 139000 | 72 | 1520@100V | 180@10V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDDD16G65C6XTMA1
Diode Schottky SiC 650V 43A 10-Pin HDSOP EP T/R
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Bestand
3.400
2,246 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Schottky Diode | SiC | Single Triple Anode Quint Cathode | 650 | 43 | 82 | 1.35@16A | 53@420V | 783(Typ) | 141000 | Tape and Reel | 10 | HDSOP EP | SO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFSL7437PBF
Trans MOSFET N-CH Si 40V 250A 3-Pin(3+Tab) TO-262 Tube
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Bestand
1.115
Von 0,6952 € bis 2,151 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 40 | ±20 | 3.9 | 250 | 1.8@10V | 150@10V | 150 | 230000 | 7330@25V | 2@6V|1.4@10V | Tube | 3 | TO-262 | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDW20G65C5BXKSA2
Diode Schottky 650V 10A 3-Pin(3+Tab) TO-247 Tube
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Bestand
225
Von 4,4004 € bis 6,8243 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Schottky Diode | Dual Common Cathode | 650 | 10 | 58 | 1.7 | 180 | 130000 | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC036NE7NS3GATMA1
Trans MOSFET N-CH 75V 20A 8-Pin TDSON EP T/R
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Bestand
170
Von 1,2242 € bis 2,707 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 75 | ±20 | 3.8 | 20 | 3.6@10V | 63.4@10V | 63.4 | 2500 | 4400@37.5V | 2.9@10V | Tape and Reel | 8 | TDSON EP | SON | No | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSC900N20NS3GATMA1
Trans MOSFET N-CH 200V 15.2A 8-Pin TDSON EP T/R
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Bestand
2.080
Von 0,6681 € bis 1,9742 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 200 | ±20 | 4 | 15.2 | 90@10V | 9@10V | 9 | 62500 | 690@100V | 77@10V | Tape and Reel | 8 | TDSON EP | SON | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRL530NSTRRPBF
Trans MOSFET N-CH 100V 17A 3-Pin(2+Tab) D2PAK T/R
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Bestand
1.200
Von 0,3649 € bis 0,3799 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 100 | ±20 | 17 | 100@10V | 34(Max)@5V | 3800 | 800@25V | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKP15N60TXKSA1
Trans IGBT Chip N-CH 600V 26A 130W 3-Pin(3+Tab) TO-220AB Tube
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Bestand
1.500
Von 0,6115 € bis 1,1627 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | N | Single | ±20 | 600 | 26 | 130 | Tube | 3 | TO-220AB | TO | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSC110N06NS3GATMA1
Trans MOSFET N-CH 60V 53A 8-Pin TDSON EP T/R
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Bestand
5.339
Von 0,2563 € bis 0,3066 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 60 | 20 | 4 | 53 | 11@10V | 25@10V | 62 | 2.5 | 25 | 2500 | 440 | 2000@30V | 9@10V | Tape and Reel | 8 | TDSON EP | SON | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSZ120P03NS3GATMA1
Trans MOSFET P-CH 30V 11A 8-Pin TSDSON EP T/R
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Bestand
9.745
Von 0,2272 € bis 0,2954 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | P | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±25 | 1.9 | 11 | 12@10V | 30@10V | 60 | 2.4 | 30 | 52000 | 1090 | 2240@15V | 9@10V|12@6V | 350nm | Tape and Reel | 8 | TSDSON EP | SON | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF3710ZPBF
Trans MOSFET N-CH Si 100V 59A 3-Pin(3+Tab) TO-220AB Tube
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Bestand
4.224
Von 0,4924 € bis 1,7418 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 59 | 18@10V | 82@10V | 82 | 160000 | 2900@25V | Tube | 3 | TO-220AB | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF2805PBF
Trans MOSFET N-CH Si 55V 175A 3-Pin(3+Tab) TO-220AB Tube
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Bestand
4.721
0,7337 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 55 | ±20 | 4 | 175 | 4.7@10V | 150@10V | 150 | 330000 | 5110@25V | Tube | 3 | TO-220AB | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKA06N60TXKSA1
Trans IGBT Chip N-CH 600V 10A 28W 3-Pin(3+Tab) TO-220FP Tube
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Bestand
920
0,4055 €
pro Stück
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Infineon Technologies AG | IGBT-Chip | N | Single | ±20 | 600 | 10 | 28 | Tube | 3 | TO-220FP | TO | No | No | Unknown | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9Z34NSTRLPBF
Trans MOSFET P-CH Si 55V 19A 3-Pin(2+Tab) D2PAK T/R
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Bestand
16.394
Von 0,369 € bis 0,9014 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 55 | ±20 | 4 | 19 | 100@10V | 35(Max)@10V | 40 | 2.2 | 35(Max) | 3800 | 280 | 620@25V | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD70N10S3L12ATMA1
Trans MOSFET N-CH 100V 70A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
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Bestand
14.802
Von 0,8182 € bis 2,2889 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 100 | ±20 | 2.4 | 70 | 11.5@10V | 59@10V | 1.2 | 59 | 125000 | 4270@25V | 9.6@10V|11.7@4.5V | Tape and Reel | 3 | DPAK | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFH7440TRPBF
Trans MOSFET N-CH Si 40V 159A 8-Pin PQFN EP T/R
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Bestand
8.081
Von 0,8375 € bis 1,3793 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 40 | ±20 | 3.9 | 159 | 2.4@10V | 92@10V | 1.2 | 92 | 104000 | 4574@25V | 1.8@10V|2.7@6V | Tape and Reel | 8 | PQFN EP | QFN | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDH08G65C5XKSA2
Diode Schottky SiC 650V 8A 2-Pin(2+Tab) TO-220 Tube
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Bestand
322
Von 1,4806 € bis 2,937 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Schottky Diode | SiC | Single | 650 | 8 | 68 | 1.7 | 140 | 250(Typ) | 76000 | 2 | TO-220 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDDD20G65C6XTMA1
Diode Schottky SiC 650V 51A 10-Pin HDSOP EP T/R
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Bestand
1.676
3,4027 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Schottky Diode | SiC | Single Triple Anode Quint Cathode | 650 | 51 | 99 | 1.35@20A | 67@420V | 970(Typ) | 169000 | Tape and Reel | 10 | HDSOP EP | SO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFP183E7764HTSA1
Trans RF BJT NPN 12V 0.065A 250mW Automotive AEC-Q101 4-Pin SOT-143 T/R
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Bestand
3.000
0,0875 €
pro Stück
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Infineon Technologies AG | HF-BJT | NPN | Si | Single Dual Emitter | 12 | 1 | 20 | 2 | 0.065 | 8V/15mA | 50 to 120 | 70@15mA@8V | 1.1 | 250 | 0.3 | 22 | 8000(Typ) | 1.4(Typ) | Tape and Reel | 4 | SOT-143 | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB025N10N3GATMA1
Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) D2PAK T/R
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Bestand
26.000
1,9143 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quint Source | Enhancement | 1 | 100 | ±20 | 3.5 | 180 | 2.5@10V | 155@10V | 155 | 300000 | 11100@50V | 2@10V|2.5@6V | Tape and Reel | 7 | D2PAK | TO | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF4905STRRPBF
Trans MOSFET P-CH Si 55V 74A 3-Pin(2+Tab) D2PAK T/R
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Bestand
1
1,9501 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 55 | ±20 | 74 | 20@10V | 180(Max)@10V | 180(Max) | 3800 | 3400@25V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF2204SPBF
Trans MOSFET N-CH Si 40V 170A 3-Pin(2+Tab) D2PAK Tube
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Bestand
376
1,1187 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 40 | ±20 | 170 | 3.6@10V | 130@10V | 130 | 200000 | 5890@25V | 3@10V | Tube | 3 | D2PAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AUIRF7103QTR
Trans MOSFET N-CH Si 50V 3A 8-Pin SOIC T/R Automotive AEC-Q101
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Bestand
695
0,5364 €
pro Stück
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Dual Dual Drain | Enhancement | 2 | 50 | ±20 | 3 | 3 | 130@10V | 10@10V | 10 | 2400 | 255@25V | Tape and Reel | 8 | SOIC | SO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAT5405E6327HTSA1
Diode Schottky Si 0.2A 3-Pin SOT-23 T/R Automotive AEC-Q101
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Bestand
39.510
Von 0,0362 € bis 0,023 €
pro Stück
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Infineon Technologies AG | Gleichrichter | Schottky Diode | Si | Dual Common Cathode | 0.2 | 0.6 | 0.8@0.1A | 2@25V | 10 | 5 | 230 | Tape and Reel | 3 | SOT-23 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No |