IXYS Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Bridge Type | Maximum Rate of Rise of On-State Current - (A/us) | Material | Diode Type | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Maximum Continuous Forward Current - (A) | Number of Elements per Chip | Mode of Operation | Maximum Holding Current - (mA) | Maximum Continuous DC Collector Current - (A) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Peak Reverse Current - (uA) | Maximum Gate-Source Voltage - (V) | Peak On-State Voltage - (V) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Power Dissipation - (mW) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Frequency - (MHz) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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IXGP30N120B3
Trans IGBT Chip N-CH 1200V 60A 300W 3-Pin(3+Tab) TO-220
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IXYS | IGBT-Chip | N | Single | ±20 | 1200 | 60 | 300 | 3 | TO-220 | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||
IXFH56N30X3
Trans MOSFET N-CH 300V 56A 3-Pin(3+Tab) TO-247AD
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IXYS | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 300 | ±20 | 320000 | 56 | 27@10V | 56@10V | 56 | 3750@25V | 3 | TO-247AD | TO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||
IXFK94N50P2
Trans MOSFET N-CH 500V 94A 3-Pin(3+Tab) TO-264
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IXYS | MOSFETs | Power MOSFET | N | Single Dual Drain | Enhancement | 1 | 500 | ±30 | 1300000 | 94 | 55@10V | 228@10V | 228 | 14200@25V | 3 | TO-264 | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||
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IXFH34N50P3
Trans MOSFET N-CH 500V 34A 3-Pin(3+Tab) TO-247AD
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IXYS | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 500 | ±30 | 5 | 695000 | 34 | 180@10V | 60@10V | 60 | 3260@25V | 3 | TO-247AD | TO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||
CPC3982TTR
Trans MOSFET N-CH 800V 3-Pin SOT-23 T/R
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IXYS | MOSFETs | Power MOSFET | N | Single | Depletion | 1 | 800 | ±15 | 250(Typ) | 400 | 380000@0V | 2.2 | 20@25V | Tape and Reel | 3 | SOT-23 | SOT | No | Yes | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||
VUO52-16NO1
Rectifier Bridge Diode Single 1.6KV 60A 7-Pin V1-A-Pack Box
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IXYS | Brückengleichrichter | Three Phase | Single | 1600 | 60 | 380 | 1.44 | 40 | 95000 | Box | 7 | V1-A-Pack | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||
MDD255-12N1
Diode 1.2KV 270A 3-Pin Y1-CU
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IXYS | Gleichrichter | Dual Series | 1200 | 270 | 10600 | 1.4@600A | 500 | 3 | Y1-CU | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||
IXFR20N120P
Trans MOSFET N-CH Si 1.2KV 13A 3-Pin(3+Tab) ISOPLUS 247
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IXYS | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 1200 | ±30 | 290000 | 13 | 630@10V | 193@10V | 193 | 11100@25V | 3 | ISOPLUS 247 | SO | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||
IXBF20N300
Trans IGBT Chip N-CH 3000V 34A 150W 3-Pin ISOPLUS I4-PAC
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IXYS | IGBT-Chip | N | Single | ±20 | 3000 | 34 | 150 | 3 | ISOPLUS I4-PAC | SO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||
DSEP30-12A
Diode Switching 1.2KV 30A 2-Pin(2+Tab) TO-247AD Tube
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IXYS | Gleichrichter | Switching Diode | Single | 1200 | 30 | 200 | 3.27@60A | 250 | 165000 | 60(Typ) | 2 | TO-247AD | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||
| CLA100E1200KB SCR 1200V 160A(RMS) 1190A 3-Pin(3+Tab) TO-264 Tube |
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IXYS | Silicon Controlled Rectifiers - SCRs | 1000 | 500 | 1.5 | 1200 | 40 | 100 | 1.78@200A | 160 | 1200 | 100 | 0.05 | Tube | 3 | TO-264 | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||
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DHG30I1200HA
Diode Switching 1.2KV 30A 2-Pin(2+Tab) TO-247AD Tube
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IXYS | Gleichrichter | Switching Diode | Single | 1200 | 30 | 200 | 3@60A | 50 | 180000 | 200(Typ) | Tube | 2 | TO-247AD | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||
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IXFH15N100P
Trans MOSFET N-CH 1KV 15A 3-Pin(3+Tab) TO-247
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IXYS | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 1000 | ±30 | 543000 | 15 | 760@10V | 97@10V | 97 | 5140@25V | 3 | TO-247 | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||
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IXFH110N10P
Trans MOSFET N-CH 100V 110A 3-Pin(3+Tab) TO-247AD
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IXYS | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 100 | ±20 | 480000 | 110 | 15@10V | 110@10V | 110 | 3550@25V | 3 | TO-247AD | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||
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IXTP3N120
Trans MOSFET N-CH 1.2KV 3A 3-Pin(3+Tab) TO-220
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IXYS | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 1200 | ±20 | 200000 | 3 | 4500@10V | 42@10V | 42 | 1100@25V | 3 | TO-220 | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||
IXFP4N100Q
Trans MOSFET N-CH 1KV 4A 3-Pin(3+Tab) TO-220AB
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IXYS | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 1000 | ±20 | 150000 | 4 | 3000@10V | 39@10V | 39 | 1050@25V | Unknown | 3 | TO-220AB | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||
IXTY26P10T
Trans MOSFET P-CH 100V 26A 3-Pin(2+Tab) DPAK
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IXYS | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 100 | ±15 | 4.5 | 150000 | 26 | 90@10V | 52@10V | 52 | 3820@25V | 3 | DPAK | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||
IXFN64N50P
Trans MOSFET N-CH 500V 50A 4-Pin SOT-227B
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IXYS | MOSFETs | Power MOSFET | N | Single Dual Source | Enhancement | 1 | 500 | ±30 | 625000 | 50 | 85@10V | 150@10V | 150 | 9700@25V | 4 | SOT-227B | SOT | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||
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IXFN82N60Q3
Trans MOSFET N-CH 600V 66A 4-Pin SOT-227B
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IXYS | MOSFETs | Power MOSFET | N | Single Dual Source | Enhancement | 1 | 600 | ±30 | 960000 | 66 | 75@10V | 275@10V | 275 | 13500@25V | 4 | SOT-227B | SOT | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||
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IXTN46N50L
Trans MOSFET N-CH 500V 46A 4-Pin SOT-227B
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IXYS | MOSFETs | Power MOSFET | N | Single Dual Source | Enhancement | 1 | 500 | ±30 | 700000 | 46 | 160@20V | 260@15V | 7000@25V | 4 | SOT-227B | SOT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||
DSEC16-12AS
Diode Switching 1.2KV 8A 3-Pin(2+Tab) TO-263AB
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IXYS | Gleichrichter | Switching Diode | Dual Common Cathode | 1200 | 8 | 40 | 3.57@20A | 60 | 60000 | 40(Typ) | 3 | TO-263AB | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||
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IXGX320N60B3
Trans IGBT Chip N-CH 600V 500A 1700W 3-Pin(3+Tab) PLUS 247
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IXYS | IGBT-Chip | N | Single | ±20 | 600 | 500 | 1700 | 3 | PLUS 247 | No | No | No | No | No | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||
DSEI2X121-02A
Diode Switching 200V 123A 4-Pin SOT-227B
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IXYS | Gleichrichter | Switching Diode | Dual Parallel | 200 | 123 | 1300 | 1.1@120A | 1000 | 50 | 4 | SOT-227B | SOT | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||
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DPF240X400NA
Diode Switching 400V 120A 4-Pin SOT-227B Tube
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IXYS | Gleichrichter | Switching Diode | Dual Parallel | 400 | 120 | 1200 | 1.54@240A | 10 | 250000 | 30(Typ) | Tube | 4 | SOT-227B | SOT | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||
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IXFN50N80Q2
Trans MOSFET N-CH 800V 50A 4-Pin SOT-227B
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IXYS | MOSFETs | Power MOSFET | N | Single Dual Source | Enhancement | 1 | 800 | ±30 | 1135000 | 50 | 160@10V | 260@10V | 260 | 13500@25V | 4 | SOT-227B | SOT | No | No | No | No | No | EAR99 |