IXYS Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Number of Elements per Chip | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Mode of Operation | Maximum Holding Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Continuous Drain Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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DSEI2X61-06C
Diode Switching 600V 60A 4-Pin SOT-227B
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IXYS | Gleichrichter | Switching Diode | Dual Parallel | 600 | 60 | 600 | 1.8 | 200 | 50 | 180000 | 4 | SOT-227B | SOT | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||
IXFH140N20X3
Trans MOSFET N-CH 200V 140A 3-Pin(3+Tab) TO-247
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IXYS | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 200 | ±20 | 140 | 9.6@10V | 127@10V | 127 | 480000 | 7660@25V | 3 | TO-247 | TO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||
IXBN42N170A
Trans IGBT Module N-CH 1700V
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IXYS | IGBT-Module | 4 | SOT-227B | SOT | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXTT110N10L2
Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) TO-268
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IXYS | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 100 | ±20 | 4.5 | 110 | 18@10V | 260@10V | 260 | 600000 | 10500@25V | 3 | TO-268 | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||
DPG80C300HB
Diode Switching 300V 40A 3-Pin(3+Tab) TO-247 Tube
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IXYS | Gleichrichter | Switching Diode | Dual Common Cathode | 300 | 40 | 450 | 1.71@80A | 1 | 35(Typ) | 215000 | Tube | 3 | TO-247 | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||
MCC162-12IO1
SCR Module Diode 1200V 300A(RMS) 6480A 7-Pin Y4-M6 Box
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IXYS | SCR Modules | 500 | 1000 | 0.3 | 2.5 | 150 | 200 | 1200 | 10 | 1.25@300A | 1200 | 181 | 300 | 7 | Y4-M6 | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||
DPG30C200HB
Diode Switching 200V 15A 3-Pin(3+Tab) TO-247AD Tube
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IXYS | Gleichrichter | Switching Diode | Dual Common Cathode | 200 | 15 | 240 | 1.5@30A | 1 | 35(Typ) | 90000 | Tube | 3 | TO-247AD | TO | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||
IXFA12N50P
Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK
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IXYS | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 500 | ±30 | 12 | 500@10V | 29@10V | 29 | 200000 | 1830@25V | 3 | D2PAK | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||
IXBOD1-12R
SCR 2A(RMS) 200A 2-Pin BOD
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IXYS | Silicon Controlled Rectifiers - SCRs | 200 | 0.1 | 30 | 3.4@5A | 1.25 | 2 | 2 | BOD | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||
MCC95-14IO1B
SCR Module Diode 1400V 182A(RMS) 2400A 7-Pin TO-240AA
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IXYS | SCR Modules | 0.2 | 2.5 | 150 | 200 | 1400 | 10 | 1.5@300A | 1400 | 116 | 182 | 7 | TO-240AA | TO | No | Unknown | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||
IXFP30N25X3
Power MOSFET
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IXYS | MOSFETs | 250 | 176000 | 3 | TO-220 | TO | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
DNA30E2200PZ
Diode 2.2KV 30A 3-Pin(2+Tab) D2PAK-HV T/R
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IXYS | Gleichrichter | Single | 2200 | 30 | 400 | 1.53@60A | 40 | 210000 | Tape and Reel | 3 | D2PAK-HV | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||
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IXFN26N100P
Trans MOSFET N-CH 1KV 23A 4-Pin SOT-227B
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IXYS | MOSFETs | Power MOSFET | N | Single Dual Source | Enhancement | 1 | 1000 | ±30 | 23 | 390@10V | 197@10V | 197 | 595000 | 11.9@25V | 4 | SOT-227B | SOT | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||
IXTX120P20T
Trans MOSFET P-CH 200V 120A 3-Pin(3+Tab) PLUS 247
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IXYS | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 200 | ±15 | 4.5 | 120 | 30@10V | 740@10V | 740 | 1040000 | 73000@25V | 3 | PLUS 247 | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||
IXA12IF1200PB
Trans IGBT Chip N-CH 1200V 20A 85W 3-Pin(3+Tab) TO-220AB Tube
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IXYS | IGBT-Chip | XPT | N | Single | ±20 | 1200 | 20 | 85 | Tube | 3 | TO-220AB | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||
IXFT120N25X3HV
Power MOSFET
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IXYS | MOSFETs | 250 | 480000 | 3 | TO-268HV | TO | No | No | No | No | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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IXGP20N120
Trans IGBT Chip N-CH 1200V 40A 150W 3-Pin(3+Tab) TO-220AB
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IXYS | IGBT-Chip | N | Single | ±20 | 1200 | 40 | 150 | 3 | TO-220AB | TO | No | Unknown | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||
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DPG30C400HB
Diode Switching 400V 15A 3-Pin(3+Tab) TO-247AD Tube
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IXYS | Gleichrichter | Switching Diode | Dual Common Cathode | 400 | 15 | 190 | 1.61@30A | 1 | 45(Typ) | 90000 | Tube | 3 | TO-247AD | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||
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IXXN200N60C3H1
Trans IGBT Module N-CH 600V 200A 780000mW
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IXYS | IGBT-Module | 600 | 4 | SOT-227B | SOT | No | No | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IXFN50N120SK
SiC Power MOSFET
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IXYS | MOSFETs | 1200 | Tube | 4 | SOT-227B | SOT | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 475-102N21A-00 DE-475 21A 1000V N Channel MOSFET |
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IXYS | HF-MOSFETs | Unknown | Unknown | Unknown | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFK64N60P3
Trans MOSFET N-CH 600V 64A 3-Pin(3+Tab) TO-264
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IXYS | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 600 | ±30 | 64 | 100@10V | 145@10V | 145 | 1130000 | 9900@25V | 3 | TO-264 | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||
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DSA60C45HB
Diode Schottky 45V 30A 3-Pin(3+Tab) TO-247
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IXYS | Gleichrichter | Schottky Diode | Dual Common Cathode | 45 | 30 | 550 | 0.96@60A | 450 | 160000 | 3 | TO-247 | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||
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IXTP08N50D2
Trans MOSFET N-CH 500V 0.8A 3-Pin(3+Tab) TO-220AB
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IXYS | MOSFETs | Power MOSFET | N | Single | Depletion | 1 | 500 | ±20 | 0.8(Min) | 4600@0V | 12.7@5V | 60000 | 312@25V | 3 | TO-220AB | TO | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||
IXTQ50N20P
Trans MOSFET N-CH 200V 50A 3-Pin(3+Tab) TO-3P
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IXYS | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 200 | ±20 | 50 | 60@10V | 70@10V | 70 | 360000 | 2720@25V | 3 | TO-3P | TO | No | No | No | No | No | EAR99 |