Infineon Technologies AG Diodes, Transistors and Thyristors
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Maximum Breakover Voltage - (V) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Peak On-State Voltage - (V) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BSC123N08NS3GATMA1
Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP T/R
|
Bestand
8.065
Von 0,4318 € bis 1,0544 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 80 | ±20 | 3.5 | 11 | 12.3@10V | 19@10V | 62 | 18 | 19 | 2500 | 385 | 1430@40V | 14.1@6V|10.3@10V | Tape and Reel | 8 | TDSON EP | SON | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SPD03N60C3ATMA1
Trans MOSFET N-CH 600V 3.2A 3-Pin(2+Tab) DPAK T/R
|
Bestand
35.000
Von 0,3744 € bis 0,4134 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 600 | ±20 | 3.9 | 3.2 | 1400@10V | 13@10V | 75 | 13 | 38000 | 400@25V | Tape and Reel | 3 | DPAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF3805PBF
Trans MOSFET N-CH Si 55V 210A 3-Pin(3+Tab) TO-220AB Tube
|
Bestand
4.770
Von 1,3929 € bis 3,7431 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 55 | ±20 | 4 | 210 | 3.3@10V | 190@10V | 190 | 300000 | 7960@25V | 2.6@10V | Tube | 3 | TO-220AB | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BCX41E6327HTSA1
Trans GP BJT NPN 125V 0.8A 330mW 3-Pin SOT-23 T/R Automotive AEC-Q101
|
Bestand
12.000
0,0684 €
pro Stück
|
Infineon Technologies AG | GP BJT | NPN | Bipolar Small Signal | Si | Single | 125 | 1 | 125 | 5 | 1.4@30mA@300mA | 0.8 | 2 to 30|30 to 50|50 to 120 | 25@100uA@1V|63@100mA@1V|40@200mA@1V | 330 | 0.9@30mA@300mA | Tape and Reel | 3 | SOT-23 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSZ065N06LS5ATMA1
Trans MOSFET N-CH 60V 14A 8-Pin TSDSON EP T/R
|
Bestand
20.000
0,4809 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 60 | 20 | 2.3 | 14 | 6.5@10V | 10@4.5V | 62 | 2100 | 1400@30V | 5.4@10V|7.3@4.5V | Tape and Reel | 8 | TSDSON EP | SON | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IHW40N65R5XKSA1
Trans IGBT Chip N-CH 650V 80A 230W 3-Pin(3+Tab) TO-247 Tube
|
Bestand
240
Von 1,4698 € bis 3,3382 €
pro Stück
|
Infineon Technologies AG | IGBT-Chip | Trench Stop | N | Single | ±20 | 650 | 80 | 230 | Tube | 3 | TO-247 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA075N15N3GXKSA1
Trans MOSFET N-CH 150V 43A 3-Pin(3+Tab) TO-220FP Tube
|
Bestand
1.000
Von 2,9164 € bis 6,9009 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 150 | ±20 | 4 | 43 | 7.5@10V | 70@10V | 70 | 39000 | 5470@75V | 5.9@10V|6.2@8V | OptiMOS | Tube | 3 | TO-220FP | TO | No | No | Unknown | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB038N12N3GATMA1
Trans MOSFET N-CH 120V 120A 3-Pin(2+Tab) D2PAK T/R
|
Bestand
9.309
Von 2,099 € bis 4,4265 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 120 | ±20 | 4 | 120 | 3.8@10V | 158@10V | 158 | 300000 | 10400@60V | 3.2@10V|3.5@10V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFF220
Trans MOSFET N-CH 200V 3.5A 3-Pin TO-39
|
10,2525 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 200 | ±20 | 3.5 | 850@10V | 14.3(Max)@10V | 14.3(Max) | 20000 | 260@25V | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC846PNH6327XTSA1
Trans GP BJT NPN/PNP 65V 0.1A 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R
|
Bestand
27.000
Von 0,0439 € bis 0,06 €
pro Stück
|
Infineon Technologies AG | GP BJT | NPN|PNP | Bipolar Small Signal | Si | Dual | 65 | 2 | 80 | 6 | 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA | 0.1 | 200 to 300 | 200@2mA@5V | 250 | 0.3@0.5mA@10mA|0.65@5mA@100mA | Tape and Reel | 6 | SOT-363 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF9540NSTRLPBF
Trans MOSFET P-CH 100V 23A 3-Pin(2+Tab) D2PAK T/R
|
Bestand
107.495
Von 0,8389 € bis 1,9471 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 100 | ±20 | 4 | 23 | 117@10V | 73@10V | 1.1 | 73 | 3100 | 1450@25V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPT60R120CM8XTMA1
Trans MOSFET N-CH 600V 24A 9-Pin(8+Tab) HSOF T/R
|
Bestand
1.950
Von 1,0274 € bis 1,8487 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Seven Source | Enhancement | 1 | 600 | 20 | 24 | 120@10V | 24@10V | 24 | 154000 | 1045@400V | Tape and Reel | 9 | HSOF | Unknown | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDP18E120XKSA1
Diode Switching 1.2KV 31A 2-Pin(2+Tab) TO-220 Tube
|
Bestand
500
Von 0,9157 € bis 2,1657 €
pro Stück
|
Infineon Technologies AG | Gleichrichter | Switching Diode | Single | 1200 | 31 | 78 | 2.15@18A | 100 | 195(Typ) | 113000 | Tube | 2 | TO-220 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSP171PH6327XTSA1
Trans MOSFET P-CH 60V 1.9A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
|
Bestand
154.000
0,173 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Small Signal | P | Single Dual Drain | Enhancement | 1 | 60 | ±20 | 2 | 1.9 | 300@10V | 13@10V | 13 | 1800 | 365@25V | 210@10V|300@4.5V | Tape and Reel | 4 | SOT-223 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FF600R12ME7B11BPSA2
Trans IGBT Module N-CH 1200V 600A 11-Pin ECONOD-3 Tray
|
Bestand
171
Von 123,7143 € bis 131,2856 €
pro Stück
|
Infineon Technologies AG | IGBT-Module | N | Dual | ±20 | 1200 | 600 | 11 | ECONOD-3 | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ISC030N10NM6ATMA1
Trans MOSFET N-CH 100V 21A 8-Pin TDSON EP T/R
|
Bestand
10.000
1,2929 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 100 | 20 | 21 | 3@10V | 55@10V | 55 | 3000 | 4000@50V | Tape and Reel | 8 | TDSON EP | SON | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP50R280CEXKSA1
Trans MOSFET N-CH 500V 13A 3-Pin(3+Tab) TO-220 Tube
|
Bestand
7.488
Von 0,3957 € bis 1,4801 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 500 | 20 | 3.5 | 13 | 280@13V | 32.6@10V | 62 | 32.6 | 92000 | 773@100V | Tube | 3 | TO-220 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKW50N65RH5XKSA1
Trans IGBT Chip N-CH 650V 80A 305W 3-Pin(3+Tab) TO-247 Tube
|
Bestand
240
Von 3,2047 € bis 6,2836 €
pro Stück
|
Infineon Technologies AG | IGBT-Chip | Trench Stop 5 | N | Single | ±20 | 650 | 80 | 305 | 3 | TO-247 | TO | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FS200R12W3T7B11BPSA1 Trans IGBT Module N-CH 1200V 200A 21-Pin Tray |
Bestand
8
Von 81,8712 € bis 40,6115 €
pro Stück
|
Infineon Technologies AG | IGBT-Module | N | Hex | ±20 | 1200 | 200 | Tray | 21 | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPW65R060CM8XKSA1
Trans MOSFET N-CH 650V 45A 3-Pin(3+Tab) TO-247 Tube
|
Bestand
240
Von 2,9081 € bis 3,5085 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 650 | 20 | 45 | 60@10V | 52@10V | 52 | 227000 | 2462@400V | Tube | 3 | TO-247 | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SPP15N60C3XKSA1
Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220AB Tube
|
Bestand
665
Von 0,9614 € bis 1,1236 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 600 | ±20 | 3.9 | 15 | 450@10V | 63@10V | 62 | 0.8 | 63 | 156000 | 1660@25V | 390@10V | Tube | 3 | TO-220AB | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC009N04LSSCATMA1
Trans MOSFET N-CH 40V 40A 8-Pin WSON EP T/R
|
Bestand
30
Von 1,9491 € bis 2,9887 €
pro Stück
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 40 | 20 | 40 | 0.94@10V | 49@4.5V|95@10V | 95 | 3000 | 6800@20V | Tape and Reel | 8 | WSON EP | SON | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TT330N16KOFHPSA2
SCR Module 1600V 520A(RMS) 12500A 7-Pin PB50AT-1 Tray
|
Bestand
3
168,9258 €
pro Stück
|
Infineon Technologies AG | SCR Modules | 250 | 1000 | 70 | 2 | 200 | 300 | 1600 | 1.28@800A | 1600 | 330 | 520 | 7 | PB50AT-1 | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAS12505WH6327XTSA1
Diode Small Signal Schottky Si 0.1A 3-Pin SOT-323 T/R Automotive AEC-Q101
|
Bestand
3.000
Von 0,1804 € bis 0,187 €
pro Stück
|
Infineon Technologies AG | Gleichrichter | Small Signal Schottky Diode | Si | Dual Common Cathode | 0.1 | 0.5 | 0.95@0.035A | 0.15 | 1.1 | 250 | Tape and Reel | 3 | SOT-323 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFP410H6327XTSA1
Trans RF BJT NPN 4.5V 0.04A 150mW 4-Pin(3+Tab) SOT-343 T/R Automotive AEC-Q101
|
Bestand
2.990
Von 0,207 € bis 0,2573 €
pro Stück
|
Infineon Technologies AG | HF-BJT | NPN | Si | Single Dual Emitter | 4.5 | 1 | 13 | 1.5 | 0.04 | 2V/20mA | 50 to 120 | 60@13mA@2V | 0.45 | 150 | 0.09 | 10.5(Typ) | 21.5 | 23.5 | 25000(Typ) | 1.2(Typ) | Tape and Reel | 4 | SOT-343 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No |