IXYS Dioden, Transistoren und Thyristoren
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Number of Elements per Chip | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Mode of Operation | Maximum Holding Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Continuous Drain Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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IXFH52N30P
Trans MOSFET N-CH 300V 52A 3-Pin(3+Tab) TO-247
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IXYS | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 300 | ±20 | 5 | 52 | 73@10V | 110@10V | 110 | 400000 | 3490@25V | 3 | TO-247 | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||
MCO150-12IO1
SCR Module 1200V 2150A 4-Pin SOT-227B
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IXYS | SCR Modules | 10 | 1.4 | 150 | 200 | 1200 | 10 | 1.78@300A | 1200 | 158 | 4 | SOT-227B | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||
IXFR20N80P
Trans MOSFET N-CH Si 800V 11A 3-Pin(3+Tab) ISOPLUS 247
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IXYS | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 800 | ±30 | 11 | 500@10V | 85@10V | 85 | 166000 | 4680@25V | 3 | ISOPLUS 247 | SO | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||
IXFT140N10P
Trans MOSFET N-CH 100V 140A 3-Pin(2+Tab) TO-268
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IXYS | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 100 | ±20 | 140 | 11@10V | 155@10V | 155 | 600000 | 4700@25V | 3 | TO-268 | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||
IXFN180N10
Trans MOSFET N-CH Si 100V 180A 4-Pin SOT-227B
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IXYS | MOSFETs | Power MOSFET | Si | N | Single Dual Source | Enhancement | 1 | 100 | ±20 | 180 | 8@10V | 360@10V | 360 | 600000 | 9100@25V | 4 | SOT-227B | SOT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||
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DSEP2X25-12C
Diode Switching 1.2KV 25A 4-Pin SOT-227B Tube
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IXYS | Gleichrichter | Switching Diode | Dual Parallel | 1200 | 25 | 250 | 5.92@50A | 250 | 15(Typ) | 210000 | Tube | 4 | SOT-227B | SOT | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||
CPC3708CTR
Trans MOSFET N-CH Si 350V 0.005A 4-Pin(3+Tab) SOT-89 T/R
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IXYS | MOSFETs | Power MOSFET | Si | N | Single Dual Drain | Depletion | 1 | 350 | ±20 | 0.005 | 14000@0.35V | 1100 | 300(Max)@0V | Tape and Reel | 4 | SOT-89 | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||
IXTP01N100D
Trans MOSFET N-CH Si 1KV 3-Pin(3+Tab) TO-220
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IXYS | MOSFETs | Power MOSFET | Si | N | Single | Depletion | 1 | 1000 | ±20 | 80000@0V | 5.8@5V | 1100 | 100@25V | 3 | TO-220 | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||
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DPF240X200NA
Diode Switching 200V 120A 4-Pin SOT-227B Tube
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IXYS | Gleichrichter | Switching Diode | Dual Parallel | 200 | 120 | 1200 | 1.51@240A | 10 | 55(Typ) | 310000 | Tube | 4 | SOT-227B | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||
DSEI30-10A
Diode Switching 1KV 30A 2-Pin(2+Tab) TO-247AD
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IXYS | Gleichrichter | Switching Diode | Single | 1000 | 30 | 210 | 2.4@36A | 750 | 50 | 2 | TO-247AD | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||
DPG60C200HB
Diode Switching 200V 30A 3-Pin(3+Tab) TO-247 Tube
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IXYS | Gleichrichter | Switching Diode | Dual Common Cathode | 200 | 30 | 360 | 1.63 | 1 | 35(Typ) | 160000 | Tube | 3 | TO-247 | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||
IXFT58N20
Trans MOSFET N-CH 200V 58A 3-Pin(2+Tab) TO-268
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IXYS | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 200 | ±20 | 58 | 40@10V | 190@10V | 190 | 300000 | 4400@25V | 3 | TO-268 | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||
IXTK180N15P
Trans MOSFET N-CH 150V 180A 3-Pin(3+Tab) TO-264AA
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IXYS | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 150 | ±20 | 180 | 11@10V | 240@10V | 240 | 800000 | 7000@25V | 3 | TO-264AA | TO | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||
IXTA44P15T-TRL
Trans MOSFET P-CH 150V 44A 3-Pin(2+Tab) D2PAK
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IXYS | MOSFETs | Power MOSFET | P | Single | Enhancement | 1 | 150 | ±15 | 44 | 65@10V | 175@10V | 175 | 298000 | 13400@25V | 3 | D2PAK | TO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||
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DSI45-12A
Diode 1.2KV 45A 2-Pin(2+Tab) TO-247AD Tube
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IXYS | Gleichrichter | Single | 1200 | 45 | 520 | 1.57@90A | 40 | 270000 | Tube | 2 | TO-247AD | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||
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IXXH110N65C4
Trans IGBT Chip N-CH 650V 234A 880W 3-Pin(3+Tab) TO-247AD
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IXYS | IGBT-Chip | XPT | N | Single | ±20 | 650 | 234 | 880 | 3 | TO-247AD | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||
IXYX120N120C3
Trans IGBT Chip N-CH 1200V 220A 1500W 3-Pin(3+Tab) PLUS 247
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IXYS | IGBT-Chip | N | Single | ±20 | 1200 | 220 | 1500 | 3 | PLUS 247 | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||
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IXTK90N25L2
Trans MOSFET N-CH 250V 90A 3-Pin(3+Tab) TO-264
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IXYS | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 250 | 20 | 90 | 36@10V | 640@10V | 640 | 960000 | 23000@25V | 3 | TO-264 | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||
DSA1-18D
Diode 1.8KV 2.3A 2-Pin DS1
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IXYS | Gleichrichter | Single | 1800 | 2.3@Ta=45C | 118 | 1.34@7A | 700 | 2 | DS1 | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||
DPG60IM300PC
Diode Switching 300V 60A 3-Pin(2+Tab) D2PAK T/R
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IXYS | Gleichrichter | Switching Diode | Single Dual Anode | 300 | 60 | 550 | 1.78@120A | 1 | 35(Typ) | 335000 | Tape and Reel | 3 | D2PAK | TO | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||
DPG10P400PJ
Diode Switching 400V 10A 3-Pin(3+Tab) ISOPLUS 220 Tube
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IXYS | Gleichrichter | Switching Diode | Dual Series | 400 | 10 | 130 | 1.48@20A | 1 | 45(Typ) | 60000 | Tube | 3 | ISOPLUS 220 | SO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||
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DSA1-12D
Diode 1.2KV 2.3A 2-Pin DS1
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IXYS | Gleichrichter | Single | 1200 | 2.3@Ta=45C | 118 | 1.34@7A | 700 | 2 | DS1 | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||
| VGB0124AY7A Bridge Rectifiers BRAKING RECTIFIER 1400V 1A |
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IXYS | Gleichrichter | 1400 | 6 | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IXFN210N30X3
Trans MOSFET N-CH 300V 210A 4-Pin SOT-227B
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IXYS | MOSFETs | Power MOSFET | N | Single Dual Source | Enhancement | 1 | 300 | ±20 | 210 | 4.6@10V | 375@10V | 375 | 695000 | 24200@25V | 4 | SOT-227B | SOT | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||
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IXFN140N30P
Trans MOSFET N-CH 300V 110A 4-Pin SOT-227B
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IXYS | MOSFETs | Power MOSFET | N | Single Dual Source | Enhancement | 1 | 300 | ±20 | 110 | 24@10V | 185@10V | 185 | 700000 | 14800@25V | 4 | SOT-227B | SOT | No | No | No | No | No | EAR99 |