IXYS Dioden, Transistoren und Thyristoren
| Teile-Nr. | Preis | Bestand | Hersteller | Kategorie | Type | Technology | Number of SCRs/Diodes | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Number of Elements per Chip | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Mode of Operation | Maximum Holding Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Continuous Drain Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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IXZR16N60A-00
Trans RF MOSFET N-CH 600V 18A 3-Pin(3+Tab) ISOPLUS 247
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IXYS | HF-MOSFETs | MOSFET | N | Single | Enhancement | 1 | 600 | ±20 | 18 | 530(Typ)@20V | 42@10V | 42 | 3000 | 2040@480V | 3 | ISOPLUS 247 | SO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||
MMIX1F210N30P3
Trans MOSFET N-CH 300V 108A 21-Pin SMPD-X
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IXYS | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 300 | ±20 | 5 | 108 | 16@10V | 268@10V | 268 | 520000 | 16200@25V | 21 | SMPD-X | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||
IXYK120N120C3
Trans IGBT Chip N-CH 1200V 240A 1500W 3-Pin(3+Tab) TO-264
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IXYS | IGBT-Chip | N | Single | ±20 | 1200 | 240 | 1500 | 3 | TO-264 | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||
DH2X60-18A
Diode Switching 1.8KV 60A 4-Pin SOT-227B Tube
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IXYS | Gleichrichter | Switching Diode | Dual Anti Parallel | 1800 | 60 | 700 | 2.51@120A | 200 | 230(Typ) | 200000 | Tube | 4 | SOT-227B | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||
DSS16-01AS
Diode Schottky 100V 16A 3-Pin(2+Tab) D2PAK
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IXYS | Gleichrichter | Schottky Diode | Single | 100 | 16 | 230 | 0.79@15A | 500 | 105000 | 3 | D2PAK | TO | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||
DSEP60-06A
Diode Switching 600V 60A 2-Pin(2+Tab) TO-247AD Tube
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IXYS | Gleichrichter | Switching Diode | Single | 600 | 60 | 600 | 2.33@120A | 650 | 35(Typ) | 330000 | Tube | 2 | TO-247AD | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||
IXGN200N60B3
Trans IGBT Chip N-CH 600V 300A 830W 4-Pin SOT-227B
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IXYS | IGBT-Chip | N | Single Dual Emitter | ±20 | 600 | 300 | 830 | 4 | SOT-227B | SOT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||
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VBO40-12NO6
Rectifier Bridge Diode Single 1.2KV 40A 4-Pin SOT-227B
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IXYS | Brückengleichrichter | Single | 1200 | 40 | 320 | 1.15@20A | 300 | 4 | SOT-227B | SOT | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||
CLA50E1200HB
Thyristor SCR 1.2KV 590A 3-Pin(3+Tab) TO-247AD
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IXYS | Silicon Controlled Rectifiers - SCRs | 500 | 1000 | 0.05 | 1.5 | 50 | 115 | 1200 | 1.6@100A | 1200 | 50 | Tube | 3 | TO-247AD | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||
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DPG60I400HA
Diode Switching 400V 60A 2-Pin(2+Tab) TO-247AD Tube
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IXYS | Gleichrichter | Switching Diode | Single | 400 | 60 | 450 | 1.8@120A | 1 | 45(Typ) | 275000 | Tube | 2 | TO-247AD | TO | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||
IXFH20N80P
Trans MOSFET N-CH 800V 20A 3-Pin(3+Tab) TO-247AD
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IXYS | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 800 | ±30 | 20 | 520@10V | 86@10V | 86 | 500000 | 4685@25V | 3 | TO-247AD | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||
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IXFH120N20P
Trans MOSFET N-CH 200V 120A 3-Pin(3+Tab) TO-247AD
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IXYS | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 200 | ±20 | 120 | 22@10V | 152@10V | 152 | 714000 | 6000@25V | 3 | TO-247AD | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||
IXFA60N25X3
Trans MOSFET N-CH 250V 60A 3-Pin(2+Tab) D2PAK
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IXYS | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 250 | ±20 | 60 | 23@10V | 50@10V | 50 | 320000 | 3610@25V | 3 | D2PAK | TO-263 | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||
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IXFN180N10
Trans MOSFET N-CH Si 100V 180A 4-Pin SOT-227B
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IXYS | MOSFETs | Power MOSFET | Si | N | Single Dual Source | Enhancement | 1 | 100 | ±20 | 180 | 8@10V | 360@10V | 360 | 600000 | 9100@25V | 4 | SOT-227B | SOT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||
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IXFN36N100
Trans MOSFET N-CH 1KV 36A 4-Pin SOT-227B
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IXYS | MOSFETs | Power MOSFET | N | Single Dual Source | Enhancement | 1 | 1000 | ±20 | 36 | 240@10V | 380@10V | 380 | 700000 | 9200@25V | 4 | SOT-227B | SOT | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||
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IXFA3N120
Trans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK
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IXYS | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 1200 | ±20 | 3 | 4500@10V | 39@10V | 39 | 200000 | 1050@25V | 3 | D2PAK | TO-263 | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||
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IXFH96N20P
Trans MOSFET N-CH 200V 96A 3-Pin(3+Tab) TO-247
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IXYS | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 200 | ±20 | 96 | 24@10V | 145@10V | 145 | 600000 | 4800@25V | 3 | TO-247 | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||
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DSSK50-01A
Diode Schottky 100V 25A 3-Pin(3+Tab) TO-247AD
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IXYS | Gleichrichter | Schottky Diode | Dual Common Cathode | 100 | 25 | 450 | 0.95 | 1000 | 135000 | 3 | TO-247AD | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||
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IXFH30N50P
Trans MOSFET N-CH 500V 30A 3-Pin(3+Tab) TO-247AD
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IXYS | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 500 | ±30 | 30 | 200@10V | 70@10V | 70 | 460000 | 4150@25V | 3 | TO-247AD | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||
IXBA16N170AHV
High Voltage, High Gain BIMOSFET
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IXYS | IGBT-Chip | 3 | TO-263HV | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMA50P1600HB
Diode 1.6KV 50A 3-Pin(3+Tab) TO-247AD Tube
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IXYS | Gleichrichter | 1600 | 3 | TO-247AD | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFQ80N25X3
Trans MOSFET N-CH 250V 80A 3-Pin(3+Tab) TO-3P
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IXYS | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 250 | ±20 | 4.5 | 80 | 16@10V | 83@10V | 83 | 390000 | 5430@25V | 3 | TO-3P | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||
IXTP01N100D
Trans MOSFET N-CH Si 1KV 3-Pin(3+Tab) TO-220
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IXYS | MOSFETs | Power MOSFET | Si | N | Single | Depletion | 1 | 1000 | ±20 | 80000@0V | 5.8@5V | 1100 | 100@25V | 3 | TO-220 | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||
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DPF240X200NA
Diode Switching 200V 120A 4-Pin SOT-227B Tube
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IXYS | Gleichrichter | Switching Diode | Dual Parallel | 200 | 120 | 1200 | 1.51@240A | 10 | 55(Typ) | 310000 | Tube | 4 | SOT-227B | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||
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DSEI30-10A
Diode Switching 1KV 30A 2-Pin(2+Tab) TO-247AD
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IXYS | Gleichrichter | Switching Diode | Single | 1000 | 30 | 210 | 2.4@36A | 750 | 50 | 2 | TO-247AD | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes |